SSPS7331P -13.4 A , -30 V , RDS(ON) 13 mΩ Ω P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION DFN3x3-8PP These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are B D C FEATURES θ Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN3x3-8PP saves board space Fast switching speed High performance trench technology e E A b d g APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. F G Top View PACKAGE INFORMATION Package MPQ Leader Size DFN3x3-8PP 3K 13 inch REF. A B C D E F G Millimeter Min. Max. 0.70 0.90 3.00BSC 0.10 0.25 1.80 2.3 3.2BSC 0.01 0.02 2.35BSC REF. θ b d e g Millimeter Min. Max. 0° 12° 0.20 0.40 0.65BSC 3.00BSC 0.70(TYP.) MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current Pulsed Drain Current 1 TA = 25°C TA = 70°C 2 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 1 TA = 25°C TA = 70°C Operating Junction & Storage Temperature Range ID -13.4 A -11 A IDM -50 A IS -2.1 A PD TJ, TSTG 3.5 W 2.0 W -55 ~ 150 °C 35 °C / W 81 °C / W Thermal Resistance Ratings Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 10 sec Steady State RθJA Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 19-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SSPS7331P -13.4 A , -30 V , RDS(ON) 13 mΩ Ω P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage VGS(th) -1 - - V VDS=VGS, ID= -250µA Gate-Body Leakage Current IGSS - - ±100 nA VDS=0, VGS= ±25V - - -1 Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 ID(on) Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage 1 1 RDS(ON) µA - - -5 -50 - - - - 13 VDS= -5V, VGS= -10V VGS= -10V, ID= -11.5A - 19 gfs - 29 - S VDS= -15V, ID= -11.5A VSD - -0.8 - V IS=2.5A, VGS=0 VGS= -4.5V, ID= -9.3A 2 Qg - 25 - Gate-Source Charge Qgs - 11 - Gate-Drain Charge Qgd - 17 - Turn-On Delay Time Td(on) - 15 - Tr - 13 - Td(off) - 100 - Tf - 54 - Fall Time A - Total Gate Charge Turn-Off Delay Time VDS= -24V, VGS=0, TJ=55°C mΩ Dynamic Rise Time VDS= -24V, VGS=0 nC VDS= -15 V, VGS= -5 V, ID= -11.5 A nS VDD= -15V ID= -1A VGEN= -10V RL=6Ω Notes: 1. Pulse test：PW ≦ 300µs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 19-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSPS7331P Elektronische Bauelemente -13.4 A , -30 V , RDS(ON) 13 mΩ Ω P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 19-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSPS7331P Elektronische Bauelemente -13.4 A , -30 V , RDS(ON) 13 mΩ Ω P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 19-Jul-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4