SSQ6N60 2.6A, 600V, RDS(ON) 1500mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-220P D FEATURES C Low RDS(on) Technology. Low thermal impedance. Fast switching speed. B E T S G APPLICATIONS R A F Electronic ballast. Electronic transformer Switch mode power supply. H J I K L U M X P N O Q 1 2 3 V W Q Dimensions in millimeters Drain REF. A B C D E F G H J K L M Gate Source Millimeter Min. Max. 7.90 8.10 9.45 9.65 9.87 10.47 11.50 1.06 1.46 2.60 3.00 6.30 6.70 8.35 8.75 1.60 Typ. 1.10 1.30 1.17 1.37 1.50 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 2 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 1 Operating Junction and Storage Temperature Range REF. N O P Q R S T U V W X Millimeter Min. Max. 0.75 0.95 0.66 0.86 13.50 14.50 2.44 3.44 3.50 3.70 1.15 1.45 4.30 4.70 2.7 1.89 3.09 0.40 0.60 2.60 3.60 UNIT VDS 600 V VGS ±20 V ID @TC=25℃ 2.6 A IDM 16 A IS 2.6 A PD @TC=25℃ 36 W TJ, TSTG -55 ~ 175 °C THERMAL RESISTANCE RATINGS Maximum Thermal Resistance Junction-Ambient 1 RθJA 62.5 °C / W Maximum Thermal Resistance Junction-Case RθJC 3.47 °C / W Notes： 1 Package Limited. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 02-Dec-2010 Rev.A Any changes of specification will not be informed individually. Page 1 of 4 SSQ6N60 2.6A, 600V, RDS(ON) 1500mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBO MIN. TYP. MAX. UNIT TEST CONDITIONS Static Gate-Threshold Voltage VGS(th) 2 - 4 V VDS= VGS, ID = 250 μA Gate-Body Leakage IGSS - - ±100 nA VDS = 0V, VGS= ±20V Zero Gate Voltage Drain Current IDSS - - 25 - - 250 On-State Drain Current 1 ID(on) 5 - - A Drain-Source On-Resistance 1 RDS(ON) - - 1500 mΩ VGS= 10V, ID= 2.2 A Forward Transconductance 1 gfs - 2.5 - S VDS= 40V, ID= 2.2 A Diode Forward Voltage VSD - 1.4 - V IS= 2.6 A, VGS= 0 V μA VDS= 600V, VGS= 0V VDS= 480V, VGS= 0V, TJ=125°C VDS = 10V, VGS= 10V Dynamic 2 Total Gate Charge Qg - 16 - Gate-Source Charge Qgs - 3.4 - Gate-Drain Charge Qgd - 8 - Turn-on Delay Time Td(on) - 12.6 - Tr - 6.8 - Td(off) - 26.4 - Tf - 8.8 - Input Capacitance CISS - 557 - Output Capacitance COSS - 84 - Reverse Transfer Capacitance CRSS - 20 - Rise Time Turn-off Delay Time Fall Time nC VDS = 480 V VGS = 10 V ID = 2.2 A nS VDD= 300 V ID= 2.2 A VGEN = 10 V RL= 136 RGEN = 12 pF VDS = 25 V VGS = 0 V f = 1MHz Notes 1 Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 02-Dec-2010 Rev.A Any changes of specification will not be informed individually. Page 2 of 4 SSQ6N60 Elektronische Bauelemente 2.6A, 600V, RDS(ON) 1500mΩ N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 02-Dec-2010 Rev.A Any changes of specification will not be informed individually. Page 3 of 4 SSQ6N60 Elektronische Bauelemente 2.6A, 600V, RDS(ON) 1500mΩ N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 02-Dec-2010 Rev.A Any changes of specification will not be informed individually. Page 4 of 4