SECOS STT3457P

STT3457P
-4 A, -30 V, RDS(ON) 60 m
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
TSOP-6
These miniature surface mount MOSFETs utilize
a high cell density trench process to provide Low RDS(on)
and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and
cordless telephones.
A
E
6
5
L
4
B
F
1
2
3
C
FEATURES




REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
MPQ
LeaderSize
TSOP-6
3K
7’ inch
J
K
DG
Low RDS(on) provides higher efficiency and extends
battery life.
Low thermal impedance copper leadframe TSOP-6
saves board space.
Fast switching speed
High performance trench technology
H
Millimeter
Min.
Max.
2.70
3.10
2.60
3.00
1.40
1.80
1.10 MAX.
1.90 REF.
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0
0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
D
D
D
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA= 25°C
TA= 70°C
1
2
Ratings
Unit
VDS
VGS
-30
±20
-4
-3.2
-20
-1.7
2
1.3
-55 ~ 150
V
ID
IDM
IS
Pulsed Drain Current
Continuous Source Current (Diode Conduction) 1
Power Dissipation
Symbol
TA= 25°C
TA= 70°C
1
PD
Tj, Tstg
Thermal Resistance Ratings
Operating Junction and Storage Temperature Range
Maximum Junction to Ambient 1
t ≦ 5 sec
Steady State
RJA
62.5
110
V
A
A
A
W
°C
°C / W
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
06-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
STT3457P
-4 A, -30 V, RDS(ON) 60 m
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
Gate-Threshold Voltage
VGS(th)
-1
-
-
V
VDS= VGS, ID= 250μA
Gate-Body Leakage
IGSS
-
-
±100
nA
VDS= 0V, VGS= ±8V
-
-
-1
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current 1
Drain-Source On-Resistance 1
ID(on)
RDS(ON)
μA
-
-
-5
-20
-
-
-
-
60
-
-
50
-
-
75
VDS= -16V, VGS= 0V
VDS= -20V, VGS= 0V, TJ= 55°C
A
VDS = -5V, VGS= -4.5V
VGS= -4.5V, ID= -4.0A,TJ= 55°C
mΩ
VGS= -10V, ID= -4.0A
VGS= -4.5V, ID= -3.4A
Forward Transconductance 1
gfs
-
10
-
S
VDS= -5V, ID= -3.4A
Diode Forward Voltage
VSD
-
-0.8
-
V
IS= 1.3A, VGS= 0V
Dynamic 2
Total Gate Charge
Qg
-
6.4
-
Gate-Source Charge
Qgs
-
2
-
Gate-Drain Charge
Qgd
-
3.8
-
Turn-on Delay Time
Td(on)
-
7
-
Tr
-
10
-
Td(off)
-
30
-
Tf
-
22
-
Rise Time
Turn-off Delay Time
Fall Time
nC
VDS= -20V, VGS= -5V,
ID= -4.0A
nS
VDD= -20V, VGEN= -10V,
RL= 6, ID= -1A
Notes:
1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
06-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
STT3457P
Elektronische Bauelemente
-4 A, -30 V, RDS(ON) 60 m
P-Channel Enhancement Mode MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
06-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
STT3457P
Elektronische Bauelemente
-4 A, -30 V, RDS(ON) 60 m
P-Channel Enhancement Mode MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
06-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 4