SECOS STT3405P

STT3405P
-4.9 A, -20 V, RDS(ON) 56 m
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
TSOP-6
These miniature surface mount MOSFETs utilize
a high cell density process. Low RDS(on) assures minimal
power loss and conserves energy, making this device
ideal for use in power management circuitry. Typical
applications are PWMDC-DC converters, power management
in portable and battery-powered products such as computers,
printers, battery charger, telecommunication power system,
and telephones power system.
A
E
6


L
4
B
F
1
2
3
C
Low RDS(on) provides higher efficiency and extends
battery life.
Miniature TSOP-6 surface mount package saves
board space.
High power and current handling capability.
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
MPQ
LeaderSize
TSOP-6
3K
7’ inch
H
J
K
DG
FEATURES

5
Millimeter
Min.
Max.
2.70
3.10
2.60
3.00
1.40
1.80
1.10 MAX.
1.90 REF.
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0
0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
D
D
D
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA= 25°C
TA= 70°C
1
2
Power Dissipation
Ratings
Unit
VDS
VGS
-20
±12
-4.9
-4.0
-20
-1.7
2
1.3
-55 ~ 150
V
ID
IDM
IS
Pulsed Drain Current
Continuous Source Current (Diode Conduction) 1
TA= 25°C
TA= 70°C
1
Symbol
PD
Tj, Tstg
Thermal Resistance Ratings
Operating Junction and Storage Temperature Range
Maximum Junction to Ambient 1
t ≦ 5 sec
RJA
62.5
110
V
A
A
A
W
°C
°C / W
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
06-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
STT3405P
-4.9 A, -20 V, RDS(ON) 56 m
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
Gate-Threshold Voltage
VGS(th)
-0.7
-
-
V
VDS= VGS, ID= -250μA
Gate-Body Leakage
IGSS
-
-
±100
nA
VDS= 0V, VGS= ±12V
-
-
-1
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current 1
Drain-Source On-Resistance 1
ID(on)
RDS(ON)
μA
-
-
-5
-15
-
-
-
-
56
-
-
80
-
-
150
VDS= -16V, VGS= 0V
VDS= -16V, VGS= 0V, TJ= 55°C
A
VDS = -4.5V, VGS= -4.5V
VGS= -4.5V, ID= -4.9A
mΩ
VGS= -2.5V, ID= -4.2A
VGS= -1.8V, ID= -3.1A
Forward Transconductance 1
gfs
-
11
-
S
VDS= -10V, ID= -4.9A
Diode Forward Voltage
VSD
-
-0.8
-
V
IS= 1.7A, VGS= 0V
Dynamic 2
Total Gate Charge
Qg
-
8
-
Gate-Source Charge
Qgs
-
1.8
-
Gate-Drain Charge
Qgd
-
1.9
-
Turn-on Delay Time
Td(on)
-
22
-
Tr
-
35
-
Td(off)
-
45
-
Tf
-
25
-
Rise Time
Turn-off Delay Time
Fall Time
nC
VDS= -10V, VGS= -4.5V,
ID= -4.9A
nS
VDD= -10V, VGEN= -4.5V,
RL= 6, ID= -1A
Notes:
1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
06-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
STT3405P
Elektronische Bauelemente
-4.9 A, -20 V, RDS(ON) 56 m
P-Channel Enhancement Mode MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
06-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
STT3405P
Elektronische Bauelemente
-4.9 A, -20 V, RDS(ON) 56 m
P-Channel Enhancement Mode MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
06-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 4