STT3962N N-Channel Enhancement Mode Mos.FET 2.3 A, 60 V, RDS(ON) 0.153 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TSOP-6 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A E F Low RDS(on) provides higher efficiency and extends battery life. Miniature TSOP-6 surface mount package saves board space. RDS(on) ( 0.153@VGS= 10V 0.185@VGS= 4.5V 60 1 2 3 C REF. A B C D E F ID(A) 2.3 2.1 G D S S G D H J K DG PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) L 4 B FEATURES 5 6 Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a b Pulsed Drain Current Continuous Source Current (Diode Conduction) a Power Dissipation a Operating Junction and Storage Temperature Range VDS VGS ID @TA=25℃ ID @TA=70℃ IDM IS PD @TA=25℃ PD @TA=70℃ Tj, Tstg Ratings Maximum Unit 60 ±20 2.3 1.9 8 1.05 1.15 0.7 -55 ~ 150 °C Symbol Maximum Unit RJA 100 166 °C / W V V A A A W THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient a t ≦ 10 sec Steady State Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 20-Aug-2010 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 STT3962N N-Channel Enhancement Mode Mos.FET 2.3 A, 60 V, RDS(ON) 0.153 Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Gate-Threshold Voltage Gate-Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Symbol Min. Typ. Max. Unit Test Conditions VGS(th) 1 - - V VDS=VGS, ID= 250uA IGSS - - 100 uA VDS= 0V, VGS= 20V - - 1 - - 10 5 - - - - 0.153 IDSS ID(on) VDS= 48V, VGS= 0V uA RDS(ON) VDS= 48V, VGS=0 V, TJ= 55°C A VDS = 5V, VGS= 10 V VGS= 10V, ID= 2.3A Ω - - 0.185 VGS= 4.5V, ID= 2.1A Forward Transconductance a gfs - 10 - S VDS= 5V, ID= 2.3A Diode Forward Voltage a VSD - 0.80 - V IS= 1.05A, VGS= 0V DYNAMIC b Total Gate Charge Qg - 3 - Gate-Source Charge Qgs - 0.6 - Gate-Drain Charge Qgd - 1.0 - Turn-on Delay Time Td(on) - 5 - Tr - 12 - Rise Time Turn-off Delay Time Fall Time Td(off) - 13 - Tf - 7 - nC VDS= 15V, VGS= 4.5V, ID= 2.3A nS VDD= 15V, VGS= 4.5V, RGEN= 15, ID= 1A Notes a. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 20-Aug-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 STT3962N Elektronische Bauelemente N-Channel Enhancement Mode Mos.FET 2.3 A, 60 V, RDS(ON) 0.153 CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 20-Aug-2010 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 STT3962N Elektronische Bauelemente N-Channel Enhancement Mode Mos.FET 2.3 A, 60 V, RDS(ON) 0.153 CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 20-Aug-2010 Rev. B Any changes of specification will not be informed individually. Page 4 of 4