SEME-LAB 2N2222AQCSM

QUAD SILICON PLANAR
EPITAXIAL NPN TRANSISTORS
2N2222AQCSM
•
High Speed Saturated Switching
•
Hermetic Surface Mounted Package.
•
Ideally suited for High Speed Switching
and General Purpose Applications
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
TA = 25°C
Total Power Dissipation at
Derate Above 37.5°C
Junction Temperature Range
Storage Temperature Range
Per Device Total Package
75V
50V
6V
800mA
500mW
2W
3.08mW/°C 12.3mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES (Each Device)
Symbols
Parameters
RθJA
Thermal Resistance, Junction To Ambient
Min.
Typ.
Max.
Units
325
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8348
Issue 2
Page 1 of 3
QUAD SILICON PLANAR
EPITAXIAL NPN TRANSISTORS
2N2222AQCSM
ELECTRICAL CHARACTERISTICS (Each Device, TA = 25°C unless otherwise stated)
Symbols
(1)
V(BR)CEO
Parameters
Test Conditions
Collector-Emitter
Breakdown Voltage
IC = 10mA
IB = 0
VCB = 75V
IE = 0
10
µA
VCB = 60V
IE = 0
10
nA
TA = 150°C
10
µA
VEB = 6V
IC = 0
10
µA
VEB = 4V
IC = 0
10
nA
50
nA
ICBO
Collector Cut-Off Current
IEBO
Emitter Cut-Off Current
ICES
Collector Cut-Off Current
(1)
VCE(sat)
VBE(sat)
hFE
(1)
(1)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Forward-current transfer
ratio
Min.
Typ
Max.
50
VCE = 50V
V
IC = 150mA
IB = 15mA
0.3
IC = 500mA
IB = 50mA
1.0
IC = 150mA
IB = 15mA
IC = 500mA
IB = 50mA
IC = 0.1mA
VCE = 10V
50
IC = 1.0mA
VCE = 10V
75
IC = 10mA
VCE = 10V
100
TA = -55°C
35
IC = 150mA
VCE = 10V
100
IC = 500mA
VCE = 10V
30
IC = 20mA
VCE = 20V
0.6
Units
V
1.2
2
325
300
DYNAMIC CHARACTERISTICS
| hfe |
Small signal forward-current
transfer ratio
hfe
Small Signal Current Gain
Cobo
Output Capacitance
Cibo
Input Capacitance
ton
Turn-On Time
toff
Turn-Off Time
2.5
f = 100MHz
IC = 1.0mA
VCE = 10V
f = 1.0KHz
VCB = 10V
50
IE = 0
8
f = 1.0MHz
VEB = 0.5V
pF
IC = 0
30
f = 1.0MHz
IC = 150mA
VCC = 30V
35
IB1 = 15mA
IC = 150mA
ns
VCC = 30V
300
IB1 = - IB2 = 15mA
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8348
Issue 2
Page 2 of 3
QUAD SILICON PLANAR
EPITAXIAL NPN TRANSISTORS
2N2222AQCSM
MECHANICAL DATA
Dimensions in mm (inches)
0.30
(0.012)
Rad.
4 plcs
8.89 (0.350)
0.65 (0.025)
typ.
7.24 (0.285)
1.27 (0.050)
typ.
12
13
14
16
15
11
17
10
18
9
1.14 – 0.15
(0.045 – 0.006)
0.23
(0.009)
Rad.
18 plcs
1
2
8
7
6
5
4
3
2.54
(0.100)
1.14(0.045)
typ
1.40
(0.055)
Nom.
LCC6 (MO-042AA)
Underside View
Pad 1 – Base 1
Pad 2 – Emitter 1
Pad 3 – Collector 1
Pad 7 – Collector 2
Pad 8 – Emitter 2
Pad 9 – Base 2
Pad 10 – Base 3
Pad 11 – Emitter 3
Pad 12 – Collector 3
Pad 16 – Collector 4
Pad 17 – Emitter 4
Pad 18 – Base 4
Pads 4, 5, 6, 13, 14, 15 – No Connections
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8348
Issue 2
Page 3 of 3