2N2880-220M MECHANICAL DATA Dimensions in mm (inches) 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 FEATURES 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 NPN POWER SILICON TRANSISTOR FOR HI–REL APPLICATIONS • HERMETICALLY SEALED TO–220 METAL PACKAGE 1 2 3 • ALL LEADS ISOLATED FROM CASE 12.70 19.05 • CECC, JAN AND SPACE LEVEL SCREENING OPTIONS AVAILABLE 0.89 1.14 2.65 2.75 2.54 BSC TO–220M (TO-257AB) – Metal Package Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Maximum Voltage 110V VCEO Collector – Emitter Maximum Voltage 80V VEBO Emitter – Base Maximum Voltage 8.0V IC Maximum Continious Collector Current 5.0A IB Maximum Continious Base Current PTOT Power Dissipation @ TC = 100°C Linear Derating Factor > TC = 100°C TJ , Tstg Operating and Storage Temperature Range RθJC Thermal Resistance Junction to Case 500mA 20W 0.2W/°C –65°C to 200°C 5.0°C/W max. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5550 Issue 2 2N2880-220M ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions ICEO Collector – Emitter Cut-off Current VCE = 50V IB = 0 Min. Typ. Max. Unit 100 ICBO Collector – Base Cut-off Current VCE = 80V IE = 0 0.2 IEBO Emitter – Base Cut-off Current VEB = 4V IC = 0 0.2 V(BR)CEO Collector – Emitter Breakdown Voltage IC = 100mA V(BR)CEO Collector – Base Breakdown Voltage IC = 10µA 100 V(BR)EBO Base – Emitter Breakdown Voltage IE = 10µA 8.0 VBE(sat) Base – Emitter Saturation Voltage IC = 1.0A IB = 0.1A 1.2 VCE(sat) Collector – Emitter Saturation Voltage IC = 1.0A IB = 0.1A 0.25 IC = 5.0A IB = 0.5A 2.0 hFE DC Current Gain IC = 1.0A VCE = 5V 40 IC = 0.5A VCE = 5V 15 hfe High Frequency Forward Current Gain IC = 1.0A VCE = 10V Cobo Open Circuit Output Capacitance f = 1MHz tr Rise Time IC = 1.0A 0.3 ts Storage Time VCC = 20V 2.0 tf Fall Time IB1= 100mA 0.35 µA 80 f = 10MHz VCB = 10V V 120 — — 3.0 150 pF µs *Pulsed : Pulse duration ≤ 300 µs , duty cycle ≤ 2.0% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5550 Issue 2