2N2894 PNP SILICON TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) • SILICON PNP TRANSISTOR 5.33 (0.210) 4.32 (0.170) • HIGH SPEED, LOW SATURATION SWITCH 12.7 (0.500) min. APPLICATIONS: 0.48 (0.019) 0.41 (0.016) dia. GENERAL PURPOSE SWITCHING APPLICATIONS 2.54 (0.100) Nom. 3 1 2 TO18 PIN1 – EMITER Underside View PIN 2 – BASE PIN 3 – COLLECTOR ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -12V VCEO Collector – Emitter Voltage -12V VEBO Emitter – Base Voltage -4V IC Collector Current PD Total Device Dissipation 200mA @ TA =25°C Derate above 25°C PD Total Device Dissipation @ TC =25°C Derate above 25°C TSTG , TJ Operating and Storage Temperature Range 360mW 2.06mW / °C 1.2W 6.85mW / °C –65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 4081 Issue 1 2N2894 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter BVCEO(SUS) Collector – Base BreakdownVoltage Test Conditions Typ. Max. Unit IB = 0 -12 BVCES Collector – Emitter Breakdown Voltage IC = -10µA VBE = 0 -12 BVCBO Collector – Base Breakdown Voltage IC = -10µA IE = 0 -12 BVEBO Emitter Base Breakdown Voltage IE = 100µA IC = 0 -4 ICBO Collector Cut-off Current VCB = -6V Tamb = 125°C -10 ICES Collector Cut-off Current VCE = -6V VBE = 0 -80 IB Base Current VCE = -6V VBE = 0 -80 IC = -10mA IB = -1mA -0.15 VCE(sat) Collector – Emitter Saturation Voltage IC = -30mA IB = -3mA -0.2 IC = -100mA IB = -10mA -0.5 IC = -10mA IB = -1mA -0.78 -0.98 IC = -30mA IB = -3mA -0.85 -1.2 IC = -100mA IB = -10mA IC = -10mA VCE = -0.3V 30 IC = -30mA VCE = -0.5V 40 IC = -30mA VCE = -0.5V VBE(sat) hFE Base – Emitter On Voltage DC Current Gain IC = -10mA Min. Tamb = -55°C fT Current Gain Bandwidth Product Cob Output Capacitance Cib Input Capacitance ton Turn on Time toff Turn off Time IC = –30mA VCE = –0.5V VCE = -10V f = 100MHz IC = -30mA VCB = -5V IE = 0 f = 140KHz VBE = -0.5V IC = 0 f = 140KHz VCC = -2V IC = -30mA IB1 = – IB2=1.5mA V µA nA V V -1.7 150 — 17 25 400 MHz 6 pF 6 60 ns 90 * Pulse Test: tp ≤ 300µs, δ ≤ 1%. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 4081 Issue 1