SEME-LAB 2N2907ACSM_09

SILICON PLANAR
EPITAXIAL PNP TRANSISTOR
2N2907ACSM
•
Low Power, High Speed Saturated Switching
•
Hermetic Surface Mounted Package.
•
Ideally suited for High Speed Switching
and General Purpose Applications
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
TA = 25°C
Total Power Dissipation at
Derate Above 37.5°C
Junction Temperature Range
Storage Temperature Range
-60V
-60V
-5V
-600mA
500mW
3.08mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES (Each Device)
Symbols
Parameters
RθJA
Thermal Resistance, Junction To Ambient
Min.
Typ.
Max.
Units
325
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 3508
Issue 4
Page 1 of 3
SILICON PLANAR
EPITAXIAL PNP TRANSISTOR
2N2907ACSM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
(1)
V(BR)CEO
ICBO
Parameters
Test Conditions
Collector-Emitter
Breakdown Voltage
IC = -10mA
IB = 0
VCB = -60V
IE = 0
-10
µA
VCB = -50V
IE = 0
-10
nA
TA = 150°C
-10
µA
VEB = -5V
IC = 0
-10
µA
VEB = -4V
IC = 0
-50
nA
-50
nA
Collector Cut-Off Current
IEBO
Emitter Cut-Off Current
ICES
Collector Cut-Off Current
(1)
VCE(sat)
VBE(sat)
hFE
(1)
(1)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Forward-current transfer
ratio
Min.
Typ
Max.
-60
VCE = -50V
V
IC = -150mA
IB = -15mA
-0.4
IC = -500mA
IB = -50mA
-1.6
IC = -150mA
IB = -15mA
IC = -500mA
IB = -50mA
IC = -0.1mA
VCE = -10V
75
IC = -1.0mA
VCE = -10V
100
IC = -10mA
VCE = -10V
100
TA = -55°C
50
IC = -150mA
VCE = -10V
100
IC = -500mA
VCE = -10V
50
IC = -20mA
VCE = -20V
-0.6
Units
V
-1.3
-2.6
450
300
DYNAMIC CHARACTERISTICS
| hfe |
Small signal forward-current
transfer ratio
hfe
Small Signal Current Gain
Cobo
Output Capacitance
Cibo
Input Capacitance
ton
Turn-On Time
toff
Turn-Off Time
2
f = 100MHz
IC = -1.0mA
VCE = -10V
f = 1.0KHz
VCB = -10V
100
IE = 0
8
f = 1.0MHz
VEB = -2V
pF
IC = 0
30
f = 1.0MHz
IC = -150mA
VCC = -30V
IB1 = -15mA
IC = -150mA
VCC = -30V
IB1 = - IB2 = -15mA
45
ns
300
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 3508
Issue 4
Page 2 of 3
SILICON PLANAR
EPITAXIAL PNP TRANSISTOR
2N2907ACSM
MECHANICAL DATA
Dimensions in mm (inches)
0.31 rad.
(0.012)
3
2
0.76 ± 0.15
(0.03 ± 0.006)
2.54 ± 0.13
(0.10 ± 0.005)
0.51 ± 0.10
(0.02 ± 0.004)
1
1.91 ± 0.10
(0.075 ± 0.004)
0.31 rad.
(0.012)
3.05 ± 0.13
(0.12 ± 0.005)
A=
1.02 ± 0.10
(0.04 ± 0.004)
A
1.40
(0.055)
max.
LCC1
Underside View
Pad 1 - Base
Pad 2 - Emitter
Pad 3 - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 3508
Issue 4
Page 3 of 3