2N3725 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) HIGH VOLTAGE, HIGH CURRENT, HIGH SPEED, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-39 METAL PACKAGE FOR HIGH RELIABILITY APPLICATIONS 6.10 (0.240) 6.60 (0.260) FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. • HERMETIC METAL PACKAGE • CECC SCREENING OPTIONS 5.08 (0.200) typ. 2.54 (0.100) 2 1 • SPACE QUALITY LEVELS OPTIONS • JAN LEVEL SCREENING OPTIONS • HIGH SPEED SATURATED SWITCHING 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) APPLICATIONS: 45° Hermetically sealed 2N3725 for high reliability applications. Suitable for memory application. TO-39 METAL (TO205AD) PIN 1 – Emitter PIN OUTS PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C unless otherwise stated) VCBO Collector-base Voltage (IE = 0) 80V VCES VCEO VEBO IC Collector-emitter Voltage (VBE = 0) Collector-emitter Voltage (IB = 0) Emitter-base Voltage (IC = 0) 80V 50V 6V 1A Ptot Tj Tstg Collector Current Total Power Dissipation at Tamb ≤ 25 °C at Tcase ≤ 25 °C Junction Temperature Storage Temperature 0.8W 3.5W – 65 to 200 °C – 65 to 200 °C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 4303 Issue 1 2N3725 ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter ICBO Collector Cutoff Current (IE = 0) Test Conditions VCB = 60 V VCB = 60 V Min. Typ. Tamb = 100 `C Max. Unit 1.7 120 µA V(BR)CBO Collector-Base Breakdown Voltage (IE = 0) IC = 10 µA 80 V V(BR)CES Collector-Emitter Breakdown Voltage (VBE = 0) IC = 10 µA 80 V V(BR)CEO* Collector-Emitter Breakdown Voltage (IB = 0) IC = 10 mA 50 V V(BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = 10 µA 6 V VCE(sat ) * Collector-Emitter Saturation Voltage IC = 10 mA IB = 1 mA 0.19 0.25 IC = 100 mA IB = 10 mA 0.21 0.26 IC = 300 mA IB = 30 mA 0.31 0.4 IC = 500 mA IB = 50 mA 0.4 0.52 IC = 800 mA IB = 80 mA 0.5 0.8 IC = 1000 mA IB = 100 mA 0.6 0.95 IC = 10 mA IB = 1 mA 0.64 0.76 IC = 100 mA IB = 10 mA 0.75 0.86 IC = 300 mA IB = 30 mA 0.89 1.1 IC = 500 mA IB = 50 mA IC = 800 mA IB = 80 mA 1.0 1.5 IC = 1000 mA IB = 100 mA 1.1 1.7 IC = 10 mA VCE = 1 V 30 60 IC = 100 mA VCE = 1 V 60 90 IC = 300 mA VCE = 1 V 40 60 IC = 1000 mA VCE = 5 V 25 65 IC = 800 mA VCE = 2 V 20 40 IC = 500 mA VCE = 1 V 35 High Frequency Current Gain (f = 100Mhz) IC = 50 mA VCE = 10 V 3 CCBO Collector-Base Capacitance (f = 1Mhz) IE = 0 VCB = 10 V 10 pF CEBO Emitter-Base Capacitance (f = 1Mhz) IC = 0 VCB = 0.5 V 55 pF 35 ns 60 ns VBE(sat ) * hFE* hfe Base-Emitter Saturation Voltage DC Current Gain ton Turn-on Time toff Turn off Time 0.9 1.2 VCC = 30 V IC = 500 mA IB = 50 mA VCC = 30 V IC = 500 mA IB1 = – IB2 = 50 mA V V 150 * Pulsed : pulse duration = 300µs, duty cycle = 1% THERMAL DATA (Tcase = 25°C unless otherwise stated) Max. Unit R th j-case Thermal Resistance Junction-Case Parameter Test Conditions Min. Typ. 50 °C/W R th j-amb Thermal Resistance Junction-Ambient 220 °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 4303 Issue 1