2N3879 NPN POWER SILICON TRANSISTOR IN A HERMETICALLY SEALED METAL PACKAGE MECHANICAL DATA Dimensions in mm (inches) 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. 11.94 (0.470) 12.70 (0.500) 2 FEATURES 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) 3.68 (0.145) rad. max. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. T0-66 (TO-213AA) PIN 1 – Base Underside View PIN 2 – Emitter PIN 3 – Collector • VCEO = 75V • IC = 7A APPLICATIONS: All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEO Collector-Emitter Voltage (IB=0) VCBO VEBO IB IC PD Tj ,Tstg R JC Collector -Base Voltage (IE=0) Emitter-Base Voltage (IC=0) Continuous Base Current Continuous Collector Current Power Dissipation Tcase = 25°C Operating & Storage Temperature Range Thermal Resistance Junction to Case 75V 120V 7V 5A 7A 35W -65 to +200°C 5°C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5337 Issue 1 2N3879 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. V(BR)CEO* Collector-Emitter Breakdown Voltage IC=0.2A ICEO* Collector-Emitter Cut-Off Current VCE=50V ICEX* Collector-Emitter Cut-Off Current VCE=100V ICBO* Collector-Base Cut-Off Current VCB=120V 25 IEBO* Emitter-Base Cut-Off Current VEB=7V 10 hFE* DC Current Gain Unit 75 V 5.0 VBE=1.5V V 4.0 IC=0.5A VCE=5V 40 IC=4A VCE=5V 20 80 IC=4A VCE=2V 12 100 VCE(sat) * Collector-Emitter Saturation Voltage IC=4A IB=0.4A 1.2 VBE(sat) * Base-Emitter Saturation Voltage IC=4A IB=0.4A 2.0 VBE(on) * Base-Emitter Saturation Voltage IC=4A VCE=2V 1.8 mA V * Pulse Width < 300µs, Duty Cycle <2% DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter |hfe| Cobo Test Conditions Small Signal Current Gain (f=10MHz) IC=0.5A VCE=10V Output Capacitance (0.1 ` f ` 1MHz) IE=0A VCB=10V Min. Typ. 4 20 Max. Unit 175 pF Max. Unit SWITCHING CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter ton toff Turn On Time Turn Off Time Test Conditions IC=0.2A VCC=30V IB=0.4A IC=0.2A VCC=30V IB=- IB =0.4A Min. Typ. 0.44 µs 1.22 Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5337 Issue 1