2N4339 LOW NOISE N-CHANNEL JFET DESIGNED FOR SENSITIVE AMPLIFIER STAGES IN A HERMETICALLY SEALED PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) • LOW CUTOFF VOLTAGE 5.33 (0.210) 4.32 (0.170) • HIGH INPUT IMPEDANCE 12.7 (0.500) min. • VERY LOW NOISE 0.48 (0.019) 0.41 (0.016) dia. • HIGH GAIN • CECC SCREENING OPTIONS • JAN LEVEL SCREENING OPTIONS 2.54 (0.100) Nom. 3 1 2 APPLICATIONS: • • TO-46 (TO-206AA) PAD 1 – Source Underside View PAD 2 – Drain PAD 3 – Gate • High Gain, Low Noise Amplifiers Low Current, Low Voltage Battery Powered Amplifiers Ultrahigh Input Impedance PreAmplifiers ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS Drain – Source Voltage VDG VGS IG PD Drain – Gate Voltage Gate – Source Voltage Gate Current Total Device Dissipation at TAMB = 25°C TJ TSTG Derate above 25°C Operating Temperature Range Storage Temperature Range 50V 50V 50V 50mA 300mW 2mW/°C –55 to +175°C –65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3887 Issue 1 2N4339 OFF ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions V(BR)GSS Gate-Source Breakdown Voltage IG = -1µA IGSS Gate Reverse Current VGS = -30V VGS(OFF) Gate-Source Cutoff Voltage VDS = 15V Min. Typ. Max. 50 ID = 0.1µA Unit V -0.6 0.1 nA -1.8 V Max. Unit 1.5 mA Max. Unit ON ELECTRICAL CHARACTERISTICS Parameter IDSS Zero Gate Voltage Drain Current Test Conditions VDS = 15V Min. Typ. 0.5 SMALL SIGNAL CHARACTERISTICS Parameter |Yfs| Forward Transfer Admittance |Yos| Output Admittance Ciss Input Capacitance Crss rds(on) Reverse Transfer Capacitance Drain Source On Resistance Test Conditions VDS = 15V f = 1.0KHz VDS = 15V f = 1.0KHz VDS = 0V VGS = 0V f = 1.0KHz Min. Typ. 800 2400 15 6.0 2.0 1700 µS pF FUNCTIONAL CHARACTERISTICS Parameter NF Noise Figure Test Conditions VDS = 15V RG = 1.0M f = 1.0KHz Min. Typ. Max. Unit 1.0 dB Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3887 Issue 1