SILICON EPITAXIAL NPN TRANSISTOR 2N4912 • Low Saturation Voltage Transistor In A Hermetic Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector - Base Voltage Collector - Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current Tc = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 80V 80V 5V 1.0A 1.0A 25W 0.143W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 7 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab.co.uk Document Number 8104 Issue 1 SILICON EPITAXIAL NPN TRANSISTOR 2N4912 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions Min. Typ. Max. Units V(BR)CEO* IC = 10mA IB = 0 ICEO Collector-Emitter Breakdown Voltage Collector-Emitter Cut-Off Current VCE = 40V IB = 0 0.5 ICEX VCE = 80V VCE = 80V VBE = -1.5V VBE = -1.5V 0.1 Collector-Emitter Cut-Off Current 80 V 1.0 TC = 150°C VBE(sat)* Emitter-Base Cut-Off Current Collector-Base Cut-Off Current Base-Emitter Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturated Voltage hFE* Forward-current transfer ratio IEBO ICBO VBE* VCE(sat)* VEB = 5V IC = 0 1.0 VCB = 80V IE = 0 0.1 IC = 1.0A VCE = 1.0V 1.3 IC = 1.0A IB = 100mA 0.6 IC = 1.0A IB = 100mA 1.3 IC = 50mA IC = 500mA VCE = 1.0V VCE = 1.0V 40 IC = 1.0A VCE = 1.0V 10 20 mA V 100 DYNAMIC CHARACTERISTICS fT Transition Frequency hfe Small-Signal Current Gain Cobo Output Capacitance IC = 250mA VCE = 10V f = 1.0MHz IC = 250mA VCE = 10V f = 1.0KHz IE = 0 VCB = 10V f = 1.0MHz 3.0 22 25 70 45 MHz 100 pF * Pulse Test: tp = 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab.co.uk Document Number 8104 Issue 1 SILICON EPITAXIAL NPN TRANSISTOR 2N4912 Mechanical Data Dimensions in mm (inches) 6.35 (0.250) 8.64 (0.340) 2 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) 3.68 (0.145) rad. max. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO66 (TO-213AA) Pin 1 - Base Pin 2 - Emitter Case - Collector Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab.co.uk Document Number 8104 Issue 1