2N5058 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) NPN EPITAXIAL PLANAR BIPOLAR TRANSISTOR 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.41 (0.016) 0.53 (0.021) dia. • CECC SCREENING OPTIONS • JAN LEVEL SCREENING OPTIONS 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 APPLICATIONS: 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) • General Purpose Amplifier • High Voltage 45° TO–39 (TO-205AD) PACKAGE Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEO VCBO VEBO IC PD PD TJ , TSTG Collector – Emitter Voltage (IB = 0) Collector – Base Voltage (IE = 0) Emitter – Base Voltage (IC = 0) Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 300V 300V 7V 150mA 1.0W 6.67mW / °C 5.0W 33.3mW / °C –65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5530 Issue 1 2N5058 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. V(BR)CEO* Collector – Emitter Breakdown Voltage IC = 30mA IB = 0 300 V(BR)CBO Collector – Base Breakdown Voltage IC = 100µA IE = 0 300 V(BR)EBO Emitter – Base Breakdown Voltage IE = 100µA IC = 0 7.0 ICBO Collector Cut-off Current IEBO Typ. Max. Unit V VCB = 100V 0.05 IE = 0 TA = +125°C 20 Emitter Cut-off Current VBE = 5V IC = 0 10 VCE(sat)* Collector – Emitter Saturation Voltage IC = 30mA IB = 3mA 1.0 VBE(sat)* Base – Emitter Saturation Voltage IC = 30mA IB = 3mA 0.85 VBE(on)* Base – Emitter On Voltage IC = 30mA VCE = 25V 0.82 IC = 5mA VCE = 25V 10 IC = 30mA VCE = 25V 35 TA = -55°C 10 VCE = 25V 35 hFE* DC Current Gain IC = 100mA SMALL SIGNAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. 1 Typ. IC = 10mA f = 20MHz Output Capacitance VCB = 10V IE = 0 f = 1MHz 10 Input Capacitance VBE = 0.5V IC = 0 f = 1MHz 75 Transistion Frequency Cob Cib THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter 30 Min. 160 Typ. nA V — Max. Unit VCE = 25V ft RθJC RθJA 150 µA MHz pF Max. Unit Thermal Resistance Junction To Case 30 Thermal Resistance Junction To Ambient 150 °C / W * Pulse Test: tp ≤ 300ms, d ≤ 2%. 1) ft is defined as the frequency at which |hfe| extrapolates to untity. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5530 Issue 1