SILICON POWER NPN TRANSISTOR 2N5663 • Fast Switching Transistor • Hermetic TO-5 Metal Package • Applications include High Speed Switching Circuits and Power Amplifiers • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCER VCEO VEBO IB IC PD PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Base Current Continuous Collector Current Tc = 25°C Total Power Dissipation at Derate above 25°C TA = 25°C Total Power Dissipation at Derate above 25°C Operating Junction Temperature Range Storage Temperature Range 400V 400V 300V 6V 0.5A 2A 17.5W 100mW/°C 1.0W 5.7mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters Max Units RθJC Thermal Resistance, Junction To Case 10.0 °C/W RθJA Thermal Resistance, Junction To Ambient 175.0 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8761 Issue 1 Page 1 of 3 SILICON POWER NPN TRANSISTOR 2N5663 ** This datasheet supersedes document 5384 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters ICBO Collector-Base Cut-Off Current ICES Collector-Emitter Cut- off current (1) V(BR)CEO V(BR)CER (1) V(BR)EBO (1) VCE(sat) VBE(sat) hFE (1) (1) Test Conditions Max Units VCB = 300V 0.1 µA VCB = 400V 1.0 mA IB = 0 Collector-Emitter Breakdown Voltage IC = 10mA Collector-Emitter Breakdown Voltage IC = 10mA Emitter-Base Breakdown Voltage IE = 10µA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Min Typ VCE = 300V 0.2 TA = 150°C 9 300 RBE =100Ω 400 6 IC = 1.0A IB =0.1A 0.4 IC = 2A IB =0.4A 0.8 IC = 1.0A IB = 0.1A 1.2 IC = 2A IB = 0.4A 1.5 IC = 50mA VCE = 2V 25 IC = 0.5A VCE = 5V 25 TA = -55°C 10 IC = 1.0A VCE = 5V 15 IC = 2A VCE = 5V 5 IC = 0.1A VCE = 5V DC Current Gain µA V 75 DYNAMIC CHARACTERISTICS | hfe | Small signal forward-current transfer ratio Cobo Output Capacitance ton Turn-On Time f = 10MHz VCB = 10V 1.4 IE = 0 f = 1.0MHz IC = 0.5A VCC = 100V 7 45 pF 0.48 µs toff Turn-Off Time IB1 = -IB2 = 25mA 1.5 Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8761 Issue 1 Page 2 of 3 SILICON POWER NPN TRANSISTOR 2N5663 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO-5 (TO-205AA) Pin 1 - Emitter Pin 2 - Base Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Pin 3 - Collector Website: http://www.semelab-tt.com Document Number 8761 Issue 1 Page 3 of 3