SILICON EPITAXIAL PNP TRANSISTOR 2N5883 • High Voltage, Low Saturation Voltages. • Hermetic TO3 Metal Package. • Designed For Power Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Peak Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range -60V -60V -5V -25A -50A -7.5A 200W 1.14W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters Max. Units RθJC Thermal Resistance, Junction To Case 0.875 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 5981 Issue 3 Page 1 of 3 SILICON EPITAXIAL PNP TRANSISTOR 2N5883 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions V(BR)CEO Collector-Emitter Breakdown Voltage IC = -50mA ICEV Collector Cut-Off Current ICEO Collector Cut-Off Current ICBO IEBO (1) hFE (1) VBE (1) VBE(sat) (1) Max. -60 TC = 150°C -10 VCE = -30V IB = 0 -2 Collector Cut-Off Current VCB = -60V IE = 0 -1.0 Emitter Cut-Off Current VEB = -5V IC = 0 -1.0 IC = -3A VCE = -4V 35 IC = -10A VCE = -4V 20 IC = -25A VCE = -4V 4 IC = -10A VCE = -4V -1.5 IC = -15A IB = -1.5A -1.0 IC = -25A IB = -6.25A -4 IC = -25A IB = -6.25A -2.5 IC = -1.0A VCE = -10V Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Units V -1.0 Base-Emitter Voltage VCE(sat) Typ VBE = 1.5V Forward-current transfer ratio (1) VCE = -60V Min. mA 100 V DYNAMIC CHARACTERISTICS fT Transition Frequency Cobo Output Capacitance tr Rise Time ts Storage Time tf Fall Time 4 MHz f = 1.0MHz VCB = -10V IE = 0 1000 f = 1.0MHz pF 0.7 VCC = -30V IC = -10A IB1 = -IB2 = -1.0A 1.0 µs 0.8 Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 5981 Issue 3 Page 2 of 3 SILICON EPITAXIAL PNP TRANSISTOR 2N5883 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 2 22.23 (0.875) max. 1 1.52 (0.06) 3.43 (0.135) 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO-204AA) METAL PACKAGE Underside View Pin 1 - Base Pin 2 - Emitter Case - Collector Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 5981 Issue 3 Page 3 of 3