SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6277 • High VCEO. • High DC Current Gain, hFE. • Low Collector-Emitter Saturation Voltage, VCE(sat). • • • • Fast Switching. Hermetic TO3 Metal package. Ideally suited for Power Amplifier and Switching Applications. Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Peak Collector Current Base Current TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 180V 150V 6V 50A 100A 20A 250W 1.43W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 0.7 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8537 Issue 1 Page 1 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6277 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10mA ICEO Collector Cut-Off Current VCE = 75V IB = 0 50 VCE = 180V VBE = -1.5V 10 TA = 150°C 1.0 (1) Min. Typ Max. 150 V ICEX Collector Cut-Off Current IEBO Emitter Cut-Off Current VEB = 6V IC = 0 100 ICBO Collector Cut-Off Current VCB = 180V IE = 0 10 IC = 1.0A VCE = 4V 50 IC = 20A VCE = 4V 30 TA = -55°C 10 IC = 50A VCE = 4V 10 IC = 20A IB = 2A 1.0 IC = 50A IB = 10A 3.0 IC = 20A IB = 2A 1.8 IC = 50A IB = 10A 3.5 IC = 20A VCE = 4V 1.8 IC = 1.0A VCE = 10V hFE Forward-current transfer ratio (1) (1) VCE(sat) VBE(sat) VBE(on) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Units µA mA µA 120 V DYNAMIC CHARACTERISTICS | hfe | Small signal forward-current transfer ratio Cobo Output Capacitance ton Turn-On Time toff Turn-Off Time 2 12 f = 10MHz VCB = 10V IE = 0 600 f = 1.0MHz IC = 20A VCC = 80V 0.5 IB1 = 2A IC = 20A pF µs VCC = 80V 1.6 IB1 = - IB2 = 2A Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8537 Issue 1 Page 2 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6277 MECHANICAL DATA Dimensions in mm (inches) 3 9 .9 5 (1 .5 7 3 ) m a x . 3 0 .4 0 (1 .1 9 7 ) 3 0 .1 5 (1 .1 8 7 ) 4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) d ia . 2 p lc s . 1 1 .1 8 (0 .4 4 0 ) 1 0 .6 7 (0 .4 2 0 ) 2 1 2 6 .6 7 (1 .0 5 0 ) m a x . 1 7 .1 5 (0 .6 7 5 ) 1 6 .6 4 (0 .6 5 5 ) 7 .8 7 (0 .3 1 0 ) 6 .9 9 (0 .2 7 5 ) 1 2 .0 7 (0 .4 7 5 ) 1 1 .3 0 (0 .4 4 5 ) 1 .7 8 (0 .0 7 0 ) 1 .5 2 (0 .0 6 0 ) 2 0 .3 2 (0 .8 0 0 ) 1 8 .8 0 (0 .7 4 0 ) d ia . 1 .5 7 (0 .0 6 2 ) 1 .4 7 (0 .0 5 8 ) d ia . 2 p lc s . TO3 (TO-204AE) Pin 1 - Base Pin 2 - Emitter Case - Collector Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8537 Issue 1 Page 3 of 3