2N6782 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. APPLICATIONS 0.41 (0.016) 0.53 (0.021) dia. • FAST SWITCHING • MOTOR CONTROLS 5.08 (0.200) typ. • POWER SUPPLIES 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 45° TO39 Package (TO-205AF) Pin 1 - Source Underside View Pin 2 - Gate Pin 3 - Drain and Case ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS Drain Source Voltage 100V VDGR Drain Gate Voltage (RGS = 1MΩ) 100V ID @Tcase = 25°C Continuous Drain Current 3.5A ID @Tcase = 100°C 2.25A IDM Continuous Drain Current Pulsed Drain Current 1 VGS Gate Source Voltage ±20V PD@ Tcase = 25°C Maximum Power Dissipation 15W PD@ Tcase = 100°C Maximum Power Dissipation 6W Junction to Case Linear Derating Factor 0.12W/°C Junction to ambient Linear Derating Factor 0.005W/°C TJ,Tstg Operating and Storage Temperature Range Lead Temperature 1 ” ( 16 from case for 10 secs) 14A -55 to +150°C 300°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3093 Issue 1 2N6782 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage VGS(th) Gate Threshold Voltage IGSSF Gate Body Leakage Forward IGSSR Gate Body Leakage Reverse IDSS ID(on) VDS(on) RDS(on) Zero Gate Voltage Drain Current On State Drain Current1 Static Drain Source On-State Voltage1 Static Drain Source On-State VGS = 0 ID = 0.25mA VDS = VGS ID = 0.5A 2* 4.0* VDS = 0 TA = 125°C 1* 4.0* 100* V VGS = 20V 100* VDS = 0 TA = 125°C 200* VGS = -20V VDS = 80V. VGS =0 0.25* VDS = 100v VGS = 0 1* TC = 125°C 1 VGS = 10V A 2.1* V ID = 3.5A VGS = 10V ID = 2.25A 0.6* TC = 125°C 1.08* VDS = 5V IDS = 2.25A VGS = 0 VDS = 25V gfs Forward Transductance 1 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn–On Delay Time VDD = 34V ID = 2.25A 15* tr Rise Time RG = 50Ω RL = 15Ω 25* td(off) Turn–Off Delay Time (MOSFET switching times are essentially 25* tf Fall Time independent of operating temperature.) 20* f = 1MHz BODY– DRAIN DIODE RATINGS & CHARACTERISTICS Modified MOS POWER Continuous Source Current Body Diode symbol showing the intergal ISM Source Current1 (Body Diode) P-N junction rectifier. VSD Diode Forward Voltage 1 trr Reverse Recovery Time Notes 1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% IS = 3.5A 1.0* 3.0* 60* 200* 40* 100* 10* 25* Ω V Ω S( ) pF ns , 3.5* A 14 A 1.5* V / 5 VGS = 0 TJ = 25°C IF =IS mA 3.5 VGS = 10V Resistance1 THERMAL CHARACTERISTICS RθJC Thermal Resistance Junction – Case RθJA Thermal Resistance Junction – Ambient nA -100* DYNAMIC CHARACTERISTICS IS V TJ = 25°C di / dt = 100A/µs Free Air Operation nS 200 8.33* 175 °C\W * JEDEC registered Values Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3093 Issue 1