SEME-LAB 2N7228

2N7228
MECHANICAL DATA
Dimensions in mm (inches)
13.59 (0.535)
13.84 (0.545)
N–CHANNEL
POWER MOSFET
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
30.35 (1.195)
31.40 (1.235)
16.89 (0.665)
17.40 (0.685)
13.59 (0.535)
13.84 (0.545)
20.07 (0.790)
20.32 (0.800)
3.53 (0.139)
Dia.
3.78 (0.149)
1
2
VDSS
ID(cont)
RDS(on)
500V
12A
Ω
0.415Ω
FEATURES
3
• HERMETICALLY SEALED ISOLATED
PACKAGE
• AVALANCHE ENERGY RATING
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
3.81 (0.150)
BSC
TO–254AA – Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
• SIMPLE DRIVE REQUIREMENTS
• ALSO AVAILABLE IN A SURFACE
MOUNT PACKAGE
• EASE OF PARALLELING
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS
ID
ID
IDM
PD
EAS
IAR
EAR
dv/dt
TJ , Tstg
TL
RθJC
RθCS
RθJA
Gate – Source Voltage
Continuous Drain Current
(VGS = 10V , Tcase = 25°C)
Continuous Drain Current
(VGS = 10V , Tcase = 100°C)
1
Pulsed Drain Current
Power Dissipation @ Tcase = 25°C
Linear Derating Factor
Single Pulse Avalanche Energy 2
Avalanche Current 1
Repetitive Avalanche Energy 1
Peak Diode Recovery 3
Operating and Storage Temperature Range
Lead Temperature measured 1/16” (1.6mm) from case for 10 sec.
Thermal Resistance Junction to Case
Thermal Resistance Case to Sink (Typical)
Thermal Resistance Junction to Ambient
±20V
12A
8A
48A
150W
1.2W/°C
750mJ
12A
15mJ
3.5V/ns
–55 to 150°C
300°C
0.83°C/W
0.21°C/W
48°C/W
Notes
1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature
2) @ VDD = 50V , L ≥ 9.4mH , RG = 25Ω , Peak IL = 12A , Starting TJ = 25°C
3) @ ISD ≤ 12A , di/dt ≤ 130A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 2.35Ω
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
4/99
2N7228
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
BVDSS
Test Conditions
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
∆BVDSS Temperature Coefficient of
∆TJ
RDS(on)
VGS = 0
ID = 1mA
Min.
Typ.
Max.
500
Reference to 25°C
V
0.68
V / °C
Breakdown Voltage
ID = 1mA
Static Drain – Source On–State
VGS = 10V
ID = 8A
0.415
VGS = 10V
ID = 12A
0.515
VDS = VGS
ID = 250µA
VDS ≥ 15V
IDS = 8A
VGS = 0
VDS = 0.8BVDSS
25
TJ = 125°C
250
Resistance
2
VGS(th) Gate Threshold Voltage
2
2
4
6.5
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
Forward Gate – Source Leakage
VGS = 20V
100
IGSS
Reverse Gate – Source Leakage
VGS = –20V
–100
Ciss
DYNAMIC CHARACTERISTICS
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
CDC
Drain – Case Capacitance
Qg
Total Gate Charge
VGS = 10V
55
120
Qgs
Gate – Source Charge
ID = 12A
5
19
Qgd
Gate – Drain (“Miller”) Charge
VDS = 0.5BVDSS
27
70
td(on)
Turn– On Delay Time
tr
Rise Time
td(off)
Turn–Off Delay Time
tf
Fall Time
IS
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
600
VDS = 25V
f = 1MHz
190
170
trr
Reverse Recovery Time 2
12
TJ = 25°C
VGS = 0
IF = 12A
2
TJ = 25°C
di / dt ≤ 100A/µs VDD ≤ 50V
Qrr
Reverse Recovery Charge
ton
Forward Turn–On Time
LD
PACKAGE CHARACTERISTICS
Internal Drain Inductance Measured from 6mm down drain lead to centre of die
ns
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected].uk
A
1.7
V
1600
ns
14
µC
Negligible
8.7
LS
Internal Source Inductance Measured from 6mm down source lead to source bond pad
8.7
Notes
1) Repetitive Rating – Pulse width limited by Maximum
2) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%
Junction Temperature
* IS Current limited by pin diameter.
Semelab plc.
nC
130
48
IS = 12A
nA
35
1
Diode Forward Voltage 2
µA
12
RG = 2.35Ω
VSD
V
(Ω)
S(Ω
pF
240
ID = 12A
Pulse Source Current
Ω
2700
VGS = 0
VDD = 250V
ISM
Unit
nH
4/99