SILICON PLANAR EPITAXIAL PNP TRANSISTOR BDS18 • High Voltage • Hermetic TO220 Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TC ≤ 75°C Total Power Dissipation at Derate Above 75°C Junction Temperature Range Storage Temperature Range -120V -120V -5V -8A -2A 50W 0.4W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. Units 2.5 °C/W ** This datasheet supersedes document 3346 Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8667 Issue 1 Page 1 of 3 SILICON PLANAR EPITAXIAL PNP TRANSISTOR BDS18 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions Min. V(BR)CEO Collector-Emitter Breakdown Voltage IC = -10mA IB = 0 -120 ICEO Collector Cut-Off Current VCE = -60V IB = 0 -0.1 ICBO Collector Cut-Off Current VCB = -120V IE = 0 -20 IEBO Emitter Cut-Off Current VEB = -5V IC = 0 -10 IC = -0.5A VCE = -2V 40 250 IC = -4A VCE = -2V 15 150 IC = -0.5A IB = -0.05A -0.4 IC = -4A IB = -0.4A -1.5 IC = -1.0A VCE = -2V -1.4 IC = -0.5A VCE = -4V (1) hFE Forward-current transfer ratio (1) (1) VCE(sat) VBE(on) (1) Collector-Emitter Saturation Voltage Base-Emitter Voltage Typ Max. Units V mA µA V DYNAMIC CHARACTERISTICS fT Transition Frequency ton Turn-On Time ts Storage Time IC = -2A tf Fall Time IB1 = - IB2 = -0.2A 10 MHz f = 5MHz IC = -2A VCC = -80V IB1 = -0.2A VCC = -80V 0.5 µs 1.5 0.3 Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8667 Issue 1 Page 2 of 3 SILICON PLANAR EPITAXIAL PNP TRANSISTOR BDS18 MECHANICAL DATA Dimensions in mm (inches) 4.83 (0.190) 5.33 (0.210) 0.64 (0.025) 0.89 (0.035) 3.56 (0.140) Dia 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 13.21 (0.52) 13.72 (0.54) 13.21 (0.52) 13.72 (0.54) 10.92 (0.430) 10.41 (0.410) 2 3 12.70 (0.500) 14.73 (0.750) 1 0.89 (0.035) Dia. 1.27 (0.050) 2.54 (0.100) BSC 3.05 (0.120) BSC TO220M (TO-257AB) Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8667 Issue 1 Page 3 of 3