SEME BFC12 LAB 4TH GENERATION MOSFET SOT–227 Package Outline. Dimensions in mm (inches) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) 2 8 .9 (0 .3 5 0 ) 9 .6 (0 .3 7 8 ) Hex Nut M 4 (4 places) 4 .8 (0 .1 8 7 ) H= 4 .9 (0 .1 9 3 ) (4 places) R 4 .0 (0 .1 5 7 ) 4 .2 (0 .1 6 5 ) 4 0 .7 5 (0 .0 3 0 ) 0 .8 5 (0 .0 3 3 ) 2 5 .2 (0 .9 9 2 ) 2 5 .4 (1 .0 0 0 ) 1 W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) 1 2 .6 (0 .4 9 6 ) 1 2 .8 (0 .5 0 4 ) 3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) VDSS ID(cont) RDS(on) 3 3.3 (0 .1 2 9) 3.6 (0.14 3 ) R = 1 4 .9 (0.58 7 ) 1 5 .1 (0.59 4 ) 4 .0 (0 .1 57 ) (2 P lac e s) 5 .1 (0 .2 0 1 ) 5 .9 (0 .2 3 2 ) 1 .9 5 (0 .0 7 7 ) 2 .1 4 (0 .0 8 4 ) 3 0 .1 (1 .1 8 5 ) 3 0 .3 (1 .1 9 3 ) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS 600V 38A Ω 0.15Ω 3 8 .0 (1.4 9 6 ) 3 8 .2 (1.5 0 4 ) Terminal 1 Source 2* Terminal 3 Gate Terminal 2 Terminal 4 Drain Source 1 * Source 2 may be omitted, shorted to Source 1 or used for Gate drive circuit. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain – Source Voltage 600 V ID Continuous Drain Current 38 A IDM , ILM Pulsed Drain Current 1 and Inductive Current Clamped 152 A VGS Gate – Source Voltage ±30 V Total Power Dissipation @ Tcase = 25°C 520 W Linear Derating Factor 4.16 W / °C PD TJ , TSTG Operating and Storage Junction Temperature Range TL Lead Temperature : 0.063” from Case for 10 Sec. –55 to 150 °C 300 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic Test Conditions VGS = 0V , ID = 250µA Min. 600 Typ. Max. Unit BVDSS Drain – Source Breakdown Voltage ID(ON) On State Drain Current 2 RDS(ON) Drain – Source On State Resistance 2 VGS =10V , ID = 0.5 ID [Cont.] 0.15 Zero Gate Voltage Drain Current VDS = VDSS 250 (VGS = 0V) VDS = 0.8VDSS , TC = 125°C 1000 IGSS Gate – Source Leakage Current VGS = ±30V , VDS = 0V ±100 nA VGS(TH) Gate Threshold Voltage VDS = VGS , ID = 2.5mA 4 V IDSS VDS > ID(ON) x RDS(ON) Max VGS = 10V V 38 2 A Ω µA 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/94 SEME BFC12 LAB DYNAMIC CHARACTERISTICS Ciss Characteristic Input Capacitance Test Conditions VGS = 0V Coss Output Capacitance Crss Min. Typ. 5540 Max. Unit 6500 VDS = 25V 1025 1450 Reverse Transfer Capacitance f = 1MHz 375 570 Qg Total Gate Charge3 VGS = 10V 242 370 Qgs Gate – Source Charge VDD = 0.5 VDSS 30 45 Qgd Gate – Drain (“Miller”) Charge ID = ID [Cont.] @ 25°C 118 175 td(on) Turn–on Delay Time VGS = 15V 15 30 tr Rise Time VDD = 0.5 VDSS 24 48 td(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 46 75 tf Fall Time RG = 0.6Ω 13 26 pF nC ns SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS Characteristic Continuous Source Current (Body Diode) Test Conditions ISM Pulsed Source Current1(Body Diode) VSD Diode Forward Voltage2 VGS = 0V , IS = – ID [Cont.] trr Reverse Recovery Time IS = – ID [Cont.] Qrr Reverse Recovery Charge dls / dt = 100A/µs Min. Typ. Max. Unit 38 A 152 1.8 V 330 660 1200 ns 6 12 24 µC Min. Typ. 3 PACKAGE CHARACTERISTICS LD Characteristic Internal Drain Inductance (Measured From Drain Terminal to Centre of Die) LS Internal Source Inductance (Measured From Source Terminals to Source Bond Pads) VIsolation RMS Voltage (50–60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) CIsolation Drain-to-Mounting Base Capacitance Torque Maximum Torque for Device Mounting Screws and Electrical Terminations Max. Unit nH 5 2500 f = 1MHz V 35 pF 13 in–lbs THERMAL CHARACTERISTICS RθJC Characteristic Junction to Case RθCS Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) Min. Typ. Max. Unit 0.24 °C/W 0.05 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/94