SILICON EPITAXIAL NPN TRANSISTOR BFT29 / BFT30 / BFT31 • Hermetic TO-18 Metal Package • Designed For General Purpose Amplifiers, and Audio Driver Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) BFT29 VCBO VCEO VEBO IC PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 90V 80V BFT30 BFT31 70 60 60 50 5V 1.0A 360mW 2mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Max Units 486 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Coventry Road, Lutterworth, Leicestershire, LE17 4JB Se melab Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8963 Issue 1 Page 1 of 3 SILICON EPITAXIAL NPN TRANSISTOR BFT29 / BFT30 / BFT31 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols V(BR)CBO (1) V(BR)CEO Parameters Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Test Conditions IC = 10µA IE = 0 IC = 10mA IB = 0 Min. BFT29 90 BFT30 70 BFT31 60 BFT29 80 BFT30 60 BFT31 50 IC = 0 5 V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA ICBO Collector-Cut-Off Current VCB = Rated VCEO, IE = 0 IC = 1.0mA VCE = 10V IC = 10mA VCE = 10V hFE (1) Forward-Current Transfer Ratio IC = 100mA VCE = 10V IC = 500mA VCE = 10V IC = 1.0A VCE = 10V Base-Emitter Saturation Voltage 100 BFT29 25 BFT30 45 BFT31 45 BFT29 30 BFT30 50 BFT31 50 BFT29 50 250 BFT30 75 250 BFT31 100 300 BFT29 30 BFT30 50 BFT31 50 BFT29 20 BFT30 25 BFT31 25 BFT31 0.75 BFT29 1.6 BFT30 1.0 BFT31 1.0 IC = 500mA IB = 50mA 1.1 IC = 1.0A IB = 100mA 2.0 IB = 100mA (1) V 0.75 IC = 1.0A VBE(sat) V BFT30 Collector-Emitter Saturation Voltage Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Units V 0.95 IB = 50mA (1) Max. BFT29 IC = 500mA VCE(sat) Typ. nA V Document Number 8963 Issue 1 Page 2 of 3 SILICON EPITAXIAL NPN TRANSISTOR BFT29 / BFT30 / BFT31 DYNAMIC CHARACTERISTICS fT Transition Frequency Cobo Output Capacitance IC = 40mA VCE = 10V 80 95 MHz f = 20MHz VCB = 10V IE = 0 8.5 10 pF f = 1.0MHz Notes (1) Pulse Width ≤ 300us, δ ≤ 2% MECHANICAL DATA Dimensions in mm (inches) 5 .8 4 (0 .2 3 0 ) 5 .3 1 (0 .2 0 9 ) 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) 4 .9 5 (0 .1 9 5 ) 4 .5 2 (0 .1 7 8 ) ) ) 0 0 1 7 1 . 0 0 ( ( 3 2 3 3 . . 5 4 1 2 .7 (0 .5 0 0 ) m in . 2 . ) 0 0 5 . . n 0 .4 8 (0 .0 1 9 ) 0 .4 1 (0 .0 1 6 ) d ia . i 0 ( m 7 . 2 1 2 .5 4 (0 .1 0 0 ) N o m . 3 1 2 TO-18 (TO-206AA) Pin 1 - Emitter Pin 2 - Base Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Pin 3 - Collector Website: http://www.semelab-tt.com Document Number 8963 Issue 1 Page 3 of 3