SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSW68 • Hermetic TO-39 Metal package. • Ideally suited for Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PD PD Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Peak Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C TC = 25°C Total Power Dissipation at 150V 150V 6V 1.0A 2A 0.795W 4.5mW/°C 5W 28.6mW/°C -65 to +200°C -65 to +200°C Derate Above 25°C TJ Tstg Junction Temperature Range Storage Temperature Range THERMAL PROPERTIES Symbols Parameters RθJA RθJC Min. Typ. Max. Units Thermal Resistance, Junction To Ambient 220 °C/W Thermal Resistance, Junction To Case 35 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 6056 Issue 2 Page 1 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSW68 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10mA IB = 0 ICBO Collector Cut-Off Current VCB = 75V IE = 0 0.1 TA = 150°C 50 IC = 0.1A IB = 0.01A 0.15 IC = 0.5A IB = 0.05A 0.5 IC = 1.0A IB = 0.15A 1.0 IC = 0.1A IB = 0.01A 0.9 IC = 0.5A IB = 0.05A 1.1 IC = 1.0A IB = 0.15A 1.2 IC = 0.1A VCE = 5V 40 IC = 0.5A VCE = 5V 30 IC = 1.0A VCE = 5V 15 IC = 100mA VCE = 20V (1) (1) VCE(sat) VBE(sat) hFE (1) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Forward-current transfer ratio Min. Typ Max. 150 Units V µA V DYNAMIC CHARACTERISTICS fT Transition Frequency Cobo Output Capacitance MHz VCB = 10V IE = 0 35 f = 1.0MHz Cibo Input Capacitance ton Turn-On Time toff 30 f = 1.0MHz VEB = 0V pF IC = 0 1000 f = 1.0MHz Turn-Off Time IC = 0.5A VCC = 20V 1.0 IB1 = 0.05A IC = 0.5A µs VCC = 20V 3 IB1 = - IB2 = 0.05A Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 6056 Issue 2 Page 2 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR BSW68 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO-39 (TO-205AD) METAL PACKAGE Underside View Pin 1 - Emitter Pin 2 - Base Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Pin 3 - Collector Website: http://www.semelab-tt.com Document Number 6056 Issue 2 Page 3 of 3