2N6790 IRFF220 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. • REPETITIVE AVALANCHE RATING • SIMPLE DRIVE REQUIREMENTS 5.08 (0.200) typ. 2.54 (0.100) 2 1 • HERMETICALLY SEALED 3 0.74 (0.029) 1.14 (0.045) APPLICATIONS 0.71 (0.028) 0.53 (0.021) • FAST SWITCHING • MOTOR CONTROLS 45° • POWER SUPPLIES TO39 Package (TO-205AF) Pin 1 - Source Underside View Pin 2 - Gate Pin 3 - Drain and Case ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS Drain Source Voltage 200V ID @Tcase = 25°C Continuous Drain Current 3.5A ID @Tcase = 100°C 2.25A IDM Continuous Drain Current Pulsed Drain Current 1 VGS Gate Source Voltage ±20V PD@ Tcase = 25°C Maximum Power Dissipation 20W RθJ-C RθJ-A Thermal Resistance Junction To Case 6.25°C/W Thermal Resistance Junction To Ambient 175°C/W TJ,Tstg Operating and Storage Temperature Range Lead Temperature ( 1.6mm from case for 10 secs) 14A -55 to +150°C 300°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6445 Issue 1 2N6790 IRFF220 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage VGS = 0 ID = 1.0mA 200 VGS(th)* Gate Threshold Voltage VDS = VGS ID = 250μA 2.0 V 4.0 IGSSF Gate Body Leakage Forward VGS = 20V 100 IGSSR Gate Body Leakage Reverse VGS = -20V -100 IDSS Zero Gate Voltage Drain Current VGS =0 25 TC = 125°C 250 VGS = 10V ID = 2.25A 0.80 Resistance VGS = 10V ID = 3.5A 0.92 Forward Transconductance VDS = 15V IDS = 2.25A VDS = 25V RDS(on)* Static Drain Source On-State gfs* VDS = 160V. 1.5 nA μA Ω Ω S( ) DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 Coss Output Capacitance f = 1.0MHz Crss Reverse Transfer Capacitance td(on) Turn–On Delay Time VDD = 100V tr Rise Time RG = 7.5Ω 50 td(off) Turn–Off Delay Time (MOSFET switching times are essentially 50 tf Fall Time independent of operating temperature.) 50 Qg Qgs Total Gate Charge VGS = 10V Gate To Source Charge VDS = 100V Qgd Gate To Drain (“Miller”) Charge IS 260 pF 100 30 ID = 3.5A 40 ID = 3.5A BODY– DRAIN DIODE RATINGS & CHARACTERISTICS Modified MOS POWER Continuous Source Current (Body 14.3 0.9 3.0 2.3 9.0 nC V , 3.5 Diode) symbol showing the intergal ISM Source Current (Body Diode) P-N junction rectifier. VSD Diode Forward Voltage* trr Reverse Recovery Time IF = 3.5A QRR Reverse Recovery Charge di / dt = 100A/μs VDD = 50V IS = 3.5A 8.0 ns / A 5 VGS = 0 TJ = 25°C TJ = 25°C 14 1.5 V 400 ns 4.3 μC Notes * Pulse Test: Pulse Width ≤ 300μs, δ ≤ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 6445 Issue 1