N-CHANNEL POWER MOSFET IRFM140 / 2N7218 • Low RDS(on) MOSFET Transistor In A Isolated Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS VGS ID ID IDM PD Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current (1) Total Power Dissipation at 100V ±20V 28A 20A 112A 100W 0.8W/°C 250mJ 5.5V/ns -55 to +150°C -55 to +150°C Tc = 25°C Tc = 100°C Tc = 25°C Derate Above 25°C EAS dv/dt TJ Tstg (2) Single Pulse Avalanche Energy Peak Diode Recovery(3) Junction Temperature Range Storage Temperature Range THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 1.25 °C/W Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) @VDD = 25V, L ≥ 470µH, Peak IL = 28A, Starting TJ = 25°C (3) @ ISD ≤ 28A, di/dt ≤ 170A/µs, VDD ≤ BVDSS, TJ ≤ 150°C, Suggested RG = 9.1Ω (4) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8085 Issue 1 Page 1 of 3 N-CHANNEL POWER MOSET IRFM140 / 2N7218 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Symbols Parameters Test Conditions BVDSS Drain-Source Breakdown Voltage VGS = 0 ID = 1.0mA Temperature Coefficent of Breakdown Voltage Reference to 25°C ID = 1.0mA VGS = 10V ID = 20A 0.077 VGS = 10V ID = 28A 0.125 Gate Threshold Voltage VDS = VGS ID = 250µA 2 gfs Forward Transconductance VDS ≥ 15V I DS = 21A 9.1 IDSS Zero Gate Voltage Drain Current VGS = 0 VDS = 0.8BVDSS 25 TJ = 125°C 250 IGSS Forward Gate-Source Leakage Reverse Gate-Source Leakage ∆BVDSS ∆TJ RDS(on) VGS(th) (4) IGSS (4) Static Drain-Source On-State Resistance Min. Typ Max. 100 Units V 0.13 V/°C 4 Ω V S(Ʊ) VGS = 20V 100 VGS = -20V -100 µA nA DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 1660 Coss Output Capacitance VDS = 25V 550 Crss Reverse Transfer Capacitance f = 1.0MHz 120 Qg Total Gate Charge VGS = 10V 30 59 Qgs Gate-Source Charge ID = 28A 2.4 12 Qgd Gate-Drain Charge VDS = 0.5BVDSS 12 30.7 td(on) Turn-On Delay Time VDD = 50V tr Rise Time td(off) Turn-Off Delay Time tf Fall Time pF nC 21 145 ID = 20A ns 64 RG = 9.1Ω 105 SOURCE-DRAIN DIODE CHARACTERISTICS IS (1) ISM VSD trr (4) (4) Qrr (4) Continuous Source Current 28 Pulse Source Current 112 Diode Forward Voltage IS = 28A TJ = 25°C VGS = 0 A 1.5 V Reverse Recovery Time IS = 28A TJ = 25°C 400 ns Reverse Recovery Charge VDD ≤ 50V di/dt = 100A/µs 2.9 µC Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8085 Issue 1 Page 2 of 3 N-CHANNEL POWER MOSET IRFM140 / 2N7218 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 20.07 (0.790) 20.32 (0.800) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 1 2 3 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC 3.81 (0.150) BSC TO-254AA Pin 1 - Drain Pin 2 - Source Pin 3 - Gate Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8085 Issue 1 Page 3 of 3