SML400HB01MF Attributes: -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation -Mosfet module Maximum rated values/Electrical Properties Source-drain voltage VDSS Tj=25C to 175C Rgs=1MΩ VDSS 100 V DC Collector Current ID25 Tc=25C Tc=25C,Tvj=175C Ic, nom Ic 400 400 A Repetitive peak Drain Current tp=1msec,Tc=80C Icrm 600 A Total Power Dissipation Tc=25C Ptot 1700 W Gate-emitter peak voltage Continuous Transient VGS +/-20 =/-30 V V Repetitive Peak Forward Current tp=1msec Ifrm 600 A Isolation voltage RMS, 50Hz, t=1min Visol 2500 V MIN Drain-source breakdown voltage ID=250µA,VGS=0V, Tc=25C BVDSS 100 Gate Threshold voltage ID=8mA,VDS=VGS, Tvj=25C Vge(th) 3.0 f=1MHz,Tvj=25C,Vgs=0V,VDS=0V Tvj=25C,VDS=0.5VDSS,ID=0.5ID25,VGS=10V Gate-source leakage current VGS=+/-20V, VGS=0V,Tvj=25C Drain source leakage current VDS=VGS=20V, Tvj=25C Tvj=150C Tvj=175C IGSS IDSS TYP MAX V 5 V 15200 5800 1720 pF pF pF 470 100 270 nC nC nC 1 +/-200 nA 25 1 5 µA mA mA gfs Vgs=10V, ID=0.5ID25 60 Ic=120A,VDS=0.5VDSS,VGS=10 V Rge=3.3Ω,L=30nH Tvj=25C 97 S 50 60 150 90 ns ns Ns ns Stray Module inductance Lσce 30 nH Terminal-chip resistance Rc 1.0 mΩ Source –Drain Diode characteristics DC Forward Diode Current Is Tc=25C VGS=0V Repetitive forward current IF=IS, VGS=0V tP=300µsec, duty cycle=2% TYP MAX Is 400 A Ism 800 A VSD 1.5 V Peak reverse recovery current If=50A, -di/dt=100A/µsec VR=50V,Vgs=0V,Tvj=25C Irm If=50A, -di/dt=100A/µsec Vr=50V,Vgs=0V,Tvj=25C trr A 12 Reverse recovery time Recovered charge If=50A, -di/dt=100A/µsec Vr=50V,Vgs=0V,Tvj=25C Qrm 300 0.8 ns µC Thermal Properties Thermal resistance junction to case Thermal resistance case to heatsink Min Igbt Diode RθJ-C Tvj Maximum operating temperature Top Storage Temperature Tstg 300 200 100 0 Max 0.09 0.11 0.03 RθC-hs Maximum junction temperature 400 Typ K/W K/W 175 C -55 175 C -55 175 C 300 150 400 200 0 160A 600 700A 20 200nF CIRCUIT DIAGRAM