= 600 V HTx4-600S IT(RMS) = 4.0A NON INSULATED TYPE SENSITIVE GATE TRIAC IGT(MAX) = 10mA Symbol 2.T2 3.Gate 1.T1 1.T1 2. T2 3. Gate FEATURES Repetitive Peak Off-State Voltage: 600V R.M.S On-state Current (IT(RMS)=4A) High Commutation dv/dt Sensitive Gate Triggering 4 Mode HTP4-600S HTC4-600S HTM4-600S General Description The devices is sensitive gate TRIAC suitable for direct coupling to TTL,HTL,CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment. Absolute Maximum Ratings (Ta=25℃) Symbol Parameter Value Units VDRM Repetitive Peak Off-State Voltage 600 V IT(RMS) R.M.S On-State Current (Ta = 95℃) 4 A ITSM Surge On-State Current (One Cycle, 50/60Hz, Peak, Non Repetitive) 30/33 A VGM Peak Gate Voltage 7 V IGM Peak Gate Current 1 A PG(AV) Average Gate Power Dissipation 0.1 W PGM Peak Gate Power Dissipation 1.5 W TSTG Storage Temperature Range -40 to +125 ℃ Tj Operating Temperature -40 to +125 ℃ ◎ SEMIHOW REV.1.0 Jan 2006 HTx4-600S VDRM Symbol Parameter (Ta=25℃) Test Conditions Gate Trigger Current VD=6V, RL=10Ω VGT Gate Trigger Voltage VD=6V, RL=10Ω VGD Non Trigger Gate Voltage Tj=125℃, VD=1/2VDRM IH Typ 1+, 1-, 33+ 1+, 1-, 33+ IGT (dv/dt)c Min Tj=125℃, VD=2/3VDRM Critical Rate of Rise of (di/dt)c=-0.5A/ms (TO-220) Off-State Voltage at Tj=125℃, VD=2/3VDRM Communication (di/dt)c=-0.2A/ms (TO-126/ML) VTM Peak On-State Voltage IT=6A, Inst, Measurement 5 10 1.4 1.8 mA mA V V V 5 V/uS 11 V/uS VD=VDRM, Single Phase, Half Wave, Repetitive Peak OffState Current Units 0.2 Holding Current IDRM Max Tj =125℃ 10 mA 1.0 mA 1.6 V Max Units 3 ℃/ W 3.5 ℃/ W Thermal Characteristics S ymbol Parameter Test Conditions RTH(J-C) Thermal Resistance Junction to Case Case TO-220 TO-126/M L Min Typ ◎ SEMIHOW REV.1.0 Jan 2006 HTx4-600S Electrical Characteristics HTx4-600S Performance Curves Fig 1. Gate Characteristics Fig 2.On-State Voltage 2 10 On-state Current (A) Gate Voltage (V) 101 100 101 100 10-1 10-1 100 101 102 0.5 103 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 On-state Voltage (V) Gate Current (mA) Fig 4. On State Current vs. Maximum Power Dissipation Fig 3. Gate Trigger Voltage vs. Junction Temperature 6.0 103 Power Dissipation (W) VGT (t℃) X 100 (%) VGT (25℃) 5.5 V+GT1 V-GT1 V-GT3 102 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 101 -50 0 50 100 0.0 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig 6. Surge On-State Current Rating (Non-Repetitive) Fig 5. On State Current vs. Allowable Case Temperature 35 Surge On-State Current (A) 130 Allowable Case Temp (℃) 0.5 RMS On-State Current (A) Junction Temperature (℃) 125 120 115 110 105 100 95 30 25 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 RMS On-State Current (A) 4.0 4.5 5.0 100 101 102 Time (Cycles) ◎ SEMIHOW REV.1.0 Jan 2006 10 Transient Thermal Impedance (℃/W) 103 VGT (t℃) X 100 (%) VGT (25℃) HTx4-600S Fig8. Transient Thermal Impedance Fig 7. Gate Trigger Current vs. Junction Temperature I+GT1 I-GT1 I-GT3 102 1 101 -50 0 50 100 150 10-2 10-1 Junction Temperature (℃) 101 100 102 Time (Sec) Fig 7. Gate Trigger Characteristics Test Circuit 10Ω 10Ω A RG A 6V RG 6V V V Test Procedure I Test Procedure II 10Ω 10Ω A 6V RG A 6V V Test Procedure III RG V Test Procedure IV ◎ SEMIHOW REV.1.0 Jan 2006 HTx4-600S Package Dimension HTP4-600S (TO-220) ◎ SEMIHOW REV.1.0 Jan 2006 HTx4-600S Package Dimension HTC4-600S (TO-126) DIM Millimeters A 8.5max B 12.0max C 13.0min D 3.8±0.2 G 0.78±0.08 G1 1.2 H 2.8max H3 1.27 K 2.5±0.2 L 2.3max φ 3.20±0.2 Dimensions in Millimeters ◎ SEMIHOW REV.1.0 Jan 2006 HTx4-600S Package Dimension HTM4-600S (TO-126ML) corresponding symbol measurement A(mm) 7.99±0.25 B(mm) 11.12±0.25 C(mm) 14.5±0.5 E(mm) 3.625±0.125 F(mm) 1.4±0.12 G(mm) 0.76±0.08 G1(mm) 1.3±0.12 H(mm) 3.57±0.13 H3(mm) 2.01±0.13 I(mm) 2.99±0.38 K(mm) 1.0±0.12 L(mm) 2.3MAX φ1(mm) 3.0±0.12 ◎ SEMIHOW REV.1.0 Jan 2006