SEMiX653GAR176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX® 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 ... 20 V 10 µs -55 ... 150 °C Tc = 25 °C 545 A Tc = 80 °C 365 A 450 A VGES tpsc VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V Tj = 125 °C Tj Inverse diode IF SEMiX653GAR176HDs Tj = 150 °C IFnom Features IFRM IFRM = 2xIFnom 900 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2900 A -40 ... 150 °C Tc = 25 °C 545 A Tc = 80 °C 365 A 450 A • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Freewheeling diode Typical Applications* IFnom • AC inverter drives • UPS • Electronic welders Tj IF Tj = 150 °C IFRM IFRM = 2xIFnom 900 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2900 A -40 ... 150 °C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC = 450 A VGE = 15 V chiplevel VCE0 rCE VGE = 15 V Tj = 25 °C 2 2.45 V Tj = 125 °C 2.45 2.9 V Tj = 25 °C 1 1.2 V Tj = 125 °C 0.9 1.1 V Tj = 25 °C 2.2 2.8 mΩ 3.4 4.0 mΩ 5.8 6.4 V 3 mA Tj = 125 °C VGE(th) VGE=VCE, IC = 18 mA ICES VGE = 0 V VCE = 1700 V Cies Coes Cres VCE = 25 V VGE = 0 V 5.2 Tj = 25 °C Tj = 125 °C mA f = 1 MHz 39.6 nF f = 1 MHz 1.65 nF f = 1 MHz 1.31 nF QG VGE = - 8 V...+ 15 V 4200 nC RGint Tj = 25 °C 1.67 Ω GAR © by SEMIKRON Rev. 1 – 24.06.2010 1 SEMiX653GAR176HDs Characteristics Symbol Conditions td(on) VCC = 1200 V IC = 450 A Tj = 125 °C 290 Tj = 125 °C 90 ns RG on = 3.6 Ω RG off = 3.6 Ω Tj = 125 °C 300 mJ tr Eon Trench IGBT Modules SEMiX653GAR176HDs • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders max. Unit ns Tj = 125 °C 975 ns Tj = 125 °C 190 ns Eoff Tj = 125 °C 180 mJ Rth(j-c) per IGBT Inverse diode VF = VEC IF = 450 A VGE = 0 V chip VF0 rF IRRM Features typ. tf td(off) SEMiX® 3s min. Qrr Err Rth(j-c) rF IRRM Qrr Err Rth(j-c) K/W Tj = 25 °C 1.7 1.90 V Tj = 125 °C 1.7 1.9 V V Tj = 25 °C 0.9 1.1 1.3 Tj = 125 °C 0.7 0.9 1.1 V Tj = 25 °C 1.3 1.3 1.3 mΩ 1.8 1.8 1.8 mΩ Tj = 125 °C IF = 450 A Tj = 125 °C di/dtoff = 4200 A/µs T = 125 °C j VGE = -15 V Tj = 125 °C VCC = 1200 V per diode Freewheeling diode VF = VEC IF = 450 A VGE = 0 V chip VF0 0.054 380 A 130 µC 73 mJ 0.11 K/W Tj = 25 °C 1.7 1.9 V Tj = 125 °C 1.7 1.9 V V Tj = 25 °C 0.9 1.1 1.3 Tj = 125 °C 0.7 0.9 1.1 V Tj = 25 °C 1.3 1.3 1.3 mΩ 1.8 1.8 mΩ Tj = 125 °C IF = 450 A Tj = 125 °C di/dtoff = 4200 A/µs T = 125 °C j VGE = -15 V Tj = 125 °C VCC = 1200 V per diode 1.8 380 A 130 µC 73 mJ 0.11 K/W Module LCE RCC'+EE' 20 res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) TC = 25 °C 0.7 mΩ TC = 125 °C 1 mΩ 0.04 to terminals (M6) Mt nH K/W 3 5 Nm 2.5 5 Nm Nm w 300 g Temperatur Sensor R100 Tc=100°C (R25=5 kΩ) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% Ω 3550 ±2% K GAR 2 Rev. 1 – 24.06.2010 © by SEMIKRON SEMiX653GAR176HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1 – 24.06.2010 3 SEMiX653GAR176HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 1 – 24.06.2010 © by SEMIKRON SEMiX653GAR176HDs SEMiX 3s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 1 – 24.06.2010 5