SEMiX703GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX® 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 ... 20 V 10 µs -40 ... 150 °C Tc = 25 °C 561 A Tc = 80 °C 384 A 450 A VGES tpsc VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 125 °C Tj Inverse diode IF SEMiX703GAL126HDs Tj = 150 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 IFRM IFRM = 2xIFnom 900 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2900 A -40 ... 150 °C Tc = 25 °C 533 A Tc = 80 °C 367 A 450 A Tj Freewheeling diode IF Tj = 150 °C IFnom Typical Applications* IFRM IFRM = 2xIFnom 900 A • AC inverter drives • UPS • Electronic Welding IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2900 A -40 ... 150 °C Tj Module Remarks • Case temperatur limited to TC=125°C max. • Not for new design It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 °C 1.7 2.1 V Tj = 125 °C 2 2.45 V Tj = 25 °C 1 1.2 V Tj = 125 °C 0.9 1.1 V Tj = 25 °C 1.6 2.0 mΩ IGBT VCE(sat) IC = 450 A VGE = 15 V chiplevel VCE0 rCE VGE = 15 V Tj = 125 °C VGE(th) VGE=VCE, IC = 18 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 25 °C 5 2.4 3.0 mΩ 5.8 6.5 V 0.1 0.3 mA Tj = 125 °C mA f = 1 MHz 32.3 nF f = 1 MHz 1.69 nF f = 1 MHz 1.46 nF QG VGE = - 8 V...+ 15 V 3600 nC RGint Tj = 25 °C 1.67 Ω GAL © by SEMIKRON Rev. 0 – 16.04.2010 1 SEMiX703GAL126HDs Characteristics Symbol Conditions td(on) VCC = 600 V IC = 450 A Tj = 125 °C 310 Tj = 125 °C 60 ns RG on = 1.6 Ω RG off = 1.6 Ω Tj = 125 °C 32 mJ tr Eon Trench IGBT Modules SEMiX703GAL126HDs • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Unit ns 680 ns Tj = 125 °C 135 ns Eoff Tj = 125 °C 68 mJ Rth(j-c) per IGBT Inverse diode VF = VEC IF = 450 A VGE = 0 V chip VF0 rF Qrr Err Rth(j-c) rF IRRM Qrr Err Rth(j-c) 0.061 K/W Tj = 25 °C 1.6 1.80 V Tj = 125 °C 1.6 1.8 V V Tj = 25 °C 0.9 1 1.1 Tj = 125 °C 0.7 0.8 0.9 V Tj = 25 °C 1.1 1.3 1.6 mΩ 1.6 1.8 2.0 mΩ Tj = 125 °C IF = 450 A Tj = 125 °C di/dtoff = 8500 A/µs T = 125 °C j VGE = -15 V Tj = 125 °C VCC = 600 V per diode Freewheeling diode VF = VEC IF = 450 A VGE = 0 V chip VF0 Remarks • Case temperatur limited to TC=125°C max. • Not for new design max. Tj = 125 °C IRRM Features typ. tf td(off) SEMiX® 3s min. 580 A 130 µC 60 mJ 0.11 K/W Tj = 25 °C 1.7 1.9 V Tj = 125 °C 1.7 1.9 V V Tj = 25 °C 0.9 1 1.1 Tj = 125 °C 0.7 0.8 0.9 V Tj = 25 °C 1.3 1.5 1.8 mΩ 2.1 2.3 mΩ Tj = 125 °C IF = 450 A Tj = 125 °C di/dtoff = 8500 A/µs T = 125 °C j VGE = -15 V Tj = 125 °C VCC = 600 V per diode 1.8 580 A 130 µC 60 mJ 0.11 K/W Module LCE RCC'+EE' 20 res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) TC = 25 °C 0.7 mΩ TC = 125 °C 1 mΩ 0.04 to terminals (M6) Mt nH K/W 3 5 Nm 2.5 5 Nm Nm w 300 g Temperatur Sensor R100 Tc=100°C (R25=5 kΩ) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% Ω 3550 ±2% K GAL 2 Rev. 0 – 16.04.2010 © by SEMIKRON SEMiX703GAL126HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 0 – 16.04.2010 3 SEMiX703GAL126HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 0 – 16.04.2010 © by SEMIKRON SEMiX703GAL126HDs SEMiX 3s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 0 – 16.04.2010 5