SEMIKRON SK30GAD066T_09

SK30GAD066T
Absolute Maximum Ratings
Symbol Conditions
IGBT
23%
4
#
4 - *7/ 0
#9:
- ./ 01 - ./ 0
566
2
,8
+
- 76 0
,*
+
56
+
< .6
2
5
@
#9:- . #
2 - ,56 2= 2;3 > .6 2=
23% ? 566 2
Units
- ./ 0
2;3%
SEMITOP® 3
Values
4
- *./ 0
- ./ 0
+
- 86 0
+
Inverse Diode
IGBT Module
#A
#A9:
SK30GAD066T
- */6 0
#A9:- . #A
+
Freewheeling Diode
#A
Target Data
4
#A9:
4
- *7/ 0
- ./ 0
5/
+
- 76 0
/*
+
.66
+
#A9: - . #A
Module
Features
!
" # $ Typical Applications*
%
#&
%
'$%
Remarks
$ (
(* +
&( ,
+
#9:%
+
&4
BC6 DDD E*7/
0
BC6 DDD E*./
0
./66
2
2
+1 * D
Characteristics
Symbol Conditions
IGBT
2;3
2;3 - 231 # - 61C, +
#3%
2;3 - 6 21 23 - 23%
#;3%
23 - 6 21 2;3 - ,6 2
- ./ 01 min.
typ.
/
/18
4 - ./ 0
4
- *./ 0
4
- ./ 0
max.
51/
2
6168
+
+
,66
4 - *./ 0
236
4 - ./ 0
4
3
23
2;3 - */ 2
# - ,6 +1 2;3 - */ 2
23 - ./1 2;3 - 6 2
- */6 0
4 - ./0
+
*
618/
61F
2
*8
.8
G
.7
,8
G
2
4
- */60
4
- ./0
&D
*1C/
*18/
4 - */60
&D
*15/
.16/
2
2
A
A
- * :H
A
9; - .. G
9; - .. G
3
94B
+
61F
3
Units
#;
2 - ,662
#- ,6+
4 - */6 0
2;3-<*/2
*1.C
I
*1C8
I
*18
JKL
GAD
1
26-02-2009 DIL
© by SEMIKRON
SK30GAD066T
Characteristics
Symbol Conditions
Freewheeling Diode
2A - 23
SEMITOP® 3
IGBT Module
#A - ,6 += 2;3 - 6 2
min.
4
- ./ 0
&D
4
- *./ 0
&D
typ.
max.
Units
*1,
*1/
2
*1.
*1C/
2
2A6
4 - *./ 0
618/
61F
2
A
4
- *./ 0
F
*5
G
4
- *./ 0
,
,
+
@
61CC
I
#99:
M
#A - ,6 +
K - B/66 [email protected]
3
2- ,662
94BA
:
N :*
.1./
*1.
JKL
.1/
O
,6
*666
*576
G
Temperature sensor
SK30GAD066T
9
,P1
-
./ *660
Target Data
Features
!
" # $ This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
Typical Applications*
%
#&
%
'$%
Remarks
$ (
(* +
&( ,
+
GAD
2
26-02-2009 DIL
© by SEMIKRON
SK30GAD066T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
26-02-2009 DIL
© by SEMIKRON
SK30GAD066T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
26-02-2009 DIL
© by SEMIKRON
SK30GAD066T
/7 % 1 $1 ( .
5
/7
;+
26-02-2009 DIL
© by SEMIKRON