SKiM609GAR12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Ts = 25 °C 748 A Ts = 70 °C 608 A 600 A ICnom ICRM SKiM® 93 Trench IGBT Modules SKiM609GAR12E4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V 1800 A -20 ... 20 V 10 µs -40 ... 175 °C Ts = 25 °C 139 A Ts = 70 °C 110 A 600 A A Tj = 150 °C Inverse diode IF Tj = 175 °C IFnom Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts and electrical contacts • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives IFRM IFRM = 3xIFnom 1800 IFSM tp = 10 ms, sin 180°, Tj = 25 °C 900 A -40 ... 175 °C Ts = 25 °C 1397 A Ts = 70 °C 1107 A 1350 A Tj Freewheeling diode IF Tj = 175 °C IFnom IFRM IFRM = 3xIFnom 4050 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 6480 A -40 ... 175 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Visol AC sinus 50 Hz, t = 1 min 700 A -40 ... 125 °C 2500 V Characteristics Symbol IGBT VCE(sat) VCE0 rCE Conditions IC = 600 A VGE = 15 V chiplevel VGE = 15 V min. typ. max. Unit Tj = 25 °C 1.85 2.10 V Tj = 150 °C 2.25 2.45 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V Tj = 25 °C 1.8 2.0 m Tj = 150 °C VGE(th) VGE=VCE, IC = 24 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C Tj = 25 °C 5 2.6 2.8 m 5.8 6.5 V 0.1 0.3 mA Tj = 150 °C mA f = 1 MHz 35.20 nF f = 1 MHz 2.32 nF f = 1 MHz 1.88 nF 3400 nC 1.3 GAR © by SEMIKRON Rev. 3 – 14.07.2011 1 SKiM609GAR12E4 Characteristics Symbol Conditions td(on) Eoff VCC = 600 V IC = 600 A VGE = 15 V RG on = 4.1 RG off = 4.1 di/dton = 5000 A/µs di/dtoff = 4400 A/µs Rth(j-s) per IGBT tr Eon td(off) tf ® SKiM 93 Trench IGBT Modules SKiM609GAR12E4 Inverse diode VF = VEC IF = 150 A VGE = 0 V chip VF0 rF IRRM Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts and electrical contacts • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Qrr Err Rth(j-s) rF Qrr Err Rth(j-s) typ. max. Unit 150 Tj = 150 °C 121 ns Tj = 150 °C 136 mJ Tj = 150 °C 808 ns Tj = 150 °C 100 ns Tj = 150 °C 83 mJ ns 0.068 K/W Tj = 25 °C 2.1 2.5 V Tj = 150 °C 2.1 2.4 V Tj = 25 °C 1.1 1.3 1.5 V Tj = 150 °C 0.7 0.9 1.1 V Tj = 25 °C 4.3 5.6 6.4 m Tj = 150 °C 6.7 7.8 8.5 m IF = 150 A Tj = 150 °C di/dtoff = 3300 A/µs T = 150 °C j VGE = -15 V T j = 150 °C VCC = 600 V per diode Freewheeling diode VF = VEC IF = 600 A VGE = 0 V chip VF0 IRRM min. Tj = 150 °C Tj = 25 °C 153 A 15 µC 9 mJ 1.7 Tj = 150 °C 0.501 K/W 1.9 V 1.4 1.7 V Tj = 25 °C 1.1 1.3 1.5 V Tj = 150 °C 0.7 0.9 1.1 V Tj = 25 °C 0.5 0.6 0.7 m 0.9 0.9 m Tj = 150 °C IF = 600 A Tj = 150 °C di/dtoff = 5300 A/µs T = 150 °C j VGE = -15 V T j = 150 °C VCC = 600 V per diode 0.7 510 A 123 µC 39 mJ 0.048 K/W Module LCE RCC'+EE' 10 terminal-chip 15 nH Ts = 25 °C 0.3 m Ts = 125 °C 0.5 m 1042 g w Temperatur Sensor R100 TSensor = 100 °C (R25 = 5 k) 339 B100/125 R(T) = R100exp[B100/125(1/T-1/373)]; T[K]; 4096 K GAR 2 Rev. 3 – 14.07.2011 © by SEMIKRON SKiM609GAR12E4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 3 – 14.07.2011 3 SKiM609GAR12E4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 3 – 14.07.2011 © by SEMIKRON SKiM609GAR12E4 SKIM 93 GAR This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 3 – 14.07.2011 5