SAMWIN SW1N60C N-channel D-PAK/I-PAK/TO-92 MOSFET Features TO-251 ■ High ruggedness ■ RDS(ON) (Max 9 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-252 TO-92 BVDSS : 600V ID 1 1 2 3 2 3 : 1.0A RDS(ON) : 9.0ohm 1 2 3 2 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors and SMPS. 3 Order Codes Item 1 2 3 Sales Type SW C 1N60C SW I 1N60C SW D 1N60C Marking SW1N60C SW1N60C SW1N60C Package TO-92 TO-251 TO-252 Packaging TAPE TUBE REEL Absolute maximum ratings Symbol VDSS ID Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) VGS Gate to Source Voltage EAS Single pulsed Avalanche Energy EAR dv/dt TL TO-251 TO-252 600 Drain current pulsed TSTG, TJ TO-92 Drain to Source Voltage IDM PD Value Parameter (note 1) Unit V 0.8 1.0 A 0.5 0.65 A 2.0 4.0 A ± 30 V (note 2) 52 mJ Repetitive Avalanche Energy (note 1) 0.3 mJ Peak diode Recovery dv/dt (note 3) 4.5 V/ns Total power dissipation Derating Factor above (@TC=25oC) 25oC 3 30 W 0.025 0.23 W/oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. oC -55 ~ + 150 260 oC 275 Thermal characteristics Symbol Parameter TO-251 TO-252 Unit - 4.2 oC/W Thermal resistance, Junction to Lead Max 40 - oC/W Thermal resistance, Junction to ambient 120 100 oC/W RthjC Thermal resistance, Junction to case RthCS RthjA Mar. 2011. Rev. 2.0 Value TO-92 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 1/7 SAMWIN SW1N60C Electrical characteristic ( TC = 25oC unless otherwise specified Symbol Parameter Test conditions Min. Typ. Max. Unit VGS=0V, ID=250uA 600 - - V VDS=600V, VGS=0V - - 1 uA - - 10 uA Off characteristics BVDSS IDSS IGSS Drain to source breakdown voltage Drain to source leakage current VDS=480V, TC=125oC Gate to source leakage current, forward VGS=30V, VDS=0V - - 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V - - -100 nA 2.0 - 4.0 V 5 9 Ω - 120 150 - 18 25 On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID = 0.5A Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 4 6 td(on) Turn on delay time - 15 35 - 75 140 - 30 60 Fall time - 35 60 Qg Total gate charge - 7 9 Qgs Gate-source charge - 1.3 - Qgd Gate-drain charge - 2.4 - Min. Typ. Max. Unit - - 1.0 A - - 4.0 A tr td(off) tf Rising time Turn off delay time VGS=0V, VDS=25V, f=1MHz VDS=300V, ID=1.0A, RG=25Ω VDS=480V, VGS=10V, ID=1.0A pF ns nC Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=1.0A, VGS=0V - - 1.5 V Trr Reverse recovery time - 190 - ns Qrr Breakdown voltage temperature IS=1.0A, VGS=0V, dIF/dt=100A/us - 0.44 - uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 95mH, IAS = 1.0A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 1.0A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2/7 SAMWIN SW1N60C Fig. 1. On-state characteristics Fig. 2. Transfer characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 0 ID , Drain Current [A] 10 ID , Drain Current [A] Top : -1 10 0 10 o 150 C o 25 C o -55 C ※ Notes : ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ -2 10 1. VDS = 50V 2. 250μs Pulse Test -1 10 -1 0 10 2 1 10 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On state current vs. diode forward voltage 25 IDR, Reverse Drain Current [A] RDS(ON), Drain-Source On-Resistance [¥]ط 30 20 VGS = 10V 15 10 VGS = 20V 5 ، طNote : TJ = 25،ة 0 0.0 0 10 150،ة 25،ة ، طNotes : 1. VGS = 0V 2. 250¥ىs Pulse Test -1 10 0.5 1.0 1.5 ID, Drain Current [A] Fig. 5. Capacitance characteristics (Non-Repetitive) 2.0 2.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain voltage [V] Fig. 6. Gate charge characteristics Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 3/7 SAMWIN SW1N60C Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig. 8. On resistance variation vs. junction temperature 3.0 RDS(on), (Normalized) 1.1 1.0 0.9 ، طNotes : 1. VGS = 0 V 2. ID = 250 ¥ىA 0.8 -100 -50 0 50 100 150 Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 ، طNotes : 1. VGS = 10 V 0.5 2. ID = 0.5 A 0.0 -100 200 -50 o 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig. 9. Maximum drain current vs. case temperature. Fig. 10. Maximum safe operating area 1.00 1 10 ID, Drain Current [A] ID' Drain Current [A] Operation in This Area is Limited by R DS(on) 0.75 0.50 0.25 100 s 0 1 ms 10 10 ms DC -1 10 ، طNotes : o 1. TC = 25 C o 2. TJ = 150 C 0.00 25 3. Single Pulse -2 50 75 100 125 10 150 0 1 10 2 10 o TC' Case Temperature [ C] 10 3 10 VDS, Drain-Source Voltage [V] Fig. 11. Transient thermal response curve 1 Z¥èJC (t), Thermal Response 10 D=0.5 0 10 0.2 ، طNotes : 1. Z¥èJC(t) = 4.2 ،ة/W Max. 0.1 2. Duty Factor, D=t1/t2 0.05 3. TJM - TC = PDM * Z¥èJC(t) 0.02 0.01 -1 10 single pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 4/7 SAMWIN SW1N60C Fig. 12. Gate charge test circuit & waveform VGS Same type as DUT QG VDS QGD QGS DUT VGS 1mA Charge Fig. 13. Switching time test circuit & waveform VDS RL RG 90% VDS VDD VIN 10VIN DUT 10% 10% td(on) td(off) tr tON tf tOFF Fig. 14. Unclamped Inductive switching test circuit & waveform 1 EAS = L BVDSS IAS BVDSS - VDD IAS VDS RG 2 BVDSS L X IAS2 X VDD ID(t) 10VIN DUT VDS(t) tp time Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 5/7 SAMWIN SW1N60C Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VF VDD Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 6/7 SAMWIN SW1N60C REVISION HISTORY Revision No. Changed Characteristics Responsible Date Issuer REV 1.0 Origination, First Release Alice Nie 2007.12.05 XZQ REV 2.0 Updated the format of datasheet and added Order Codes. Alice Nie 2011.03.24 XZQ WWW.SEMIPOWER.COM.CN 西安芯派电子科技有限公司 深圳市南方芯源科技有限公司 地址：西安市高新区高新一路25号创新大厦MF6 地址：深圳市福田区天安数码城时代大厦A座2005 电话：029 - 88253717 传真：029 - 88251977 电话：0755 - 83981818 传真：0755 - 83476838 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 7/7