SAMWIN SW1N60L N-channel MOSFET Features BVDSS : 600V TO-92 ID ■ High ruggedness ■ RDS(ON) (Max 23 Ω)@VGS=10V ■ Gate Charge (Max 4.5nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested : 0.3A RDS(ON) : 23ohm 1 2 2 3 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors and SMPS. Order Codes Item 1 Sales Type SW C 1N60L Marking SW1N60L Package TO-92 Packaging TAPE Absolute maximum ratings Symbol VDSS ID Parameter Drain to Source Voltage Value Unit 600 V Continuous Drain Current (@TC=25oC) 0.3 A Continuous Drain Current (@TC=100oC) 0.18 A 1.2 A ± 30 V IDM Drain current pulsed VGS Gate to Source Voltage EAS Single pulsed Avalanche Energy (note 2) 33 mJ EAR Repetitive Avalanche Energy (note 1) 0.3 mJ dv/dt Peak diode Recovery dv/dt (note 3) 4.5 V/ns 1 W 0.02 W/oC -55 ~ + 150 oC 300 oC Value Unit PD TSTG, TJ TL (note 1) Total power dissipation (@TC=25oC) Derating Factor above 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Thermal characteristics Symbol Parameter RthCL Thermal resistance, Junction to Lead Max 50 oC/W RthjA Thermal resistance, Junction to ambient 140 oC/W Mar. 2011. Rev. 2.0 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 1/7 SAMWIN SW1N60L Electrical characteristic ( TC = 25oC unless otherwise specified Symbol Parameter Test conditions Min. Typ. Max. Unit VGS=0V, ID=250uA 600 - - V VDS=600V, VGS=0V - - 1 uA - - 10 uA Off characteristics BVDSS IDSS Drain to source breakdown voltage Drain to source leakage current VDS=480V, TC=125oC Gate to source leakage current, forward VGS=30V, VDS=0V - - 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V - - -100 nA 3.0 - 4.5 V 23 Ω IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=50uA RDS(ON) Drain to source on state resistance VGS=10V, ID = 0.2A Dynamic characteristics Ciss Input capacitance - 60 Coss Output capacitance - 12 Crss Reverse transfer capacitance - 3 td(on) Turn on delay time - 12 - 11 - 40 Fall time - 18 Qg Total gate charge - 4.5 Qgs Gate-source charge - 1 - Qgd Gate-drain charge - 3.5 - Min. Typ. Max. Unit - - 0.3 A - - 1.2 A tr td(off) tf Rising time Turn off delay time VGS=0V, VDS=25V, f=1MHz VDS=300V, ID=0.3A, RG=25Ω VDS=480V, VGS=10V, ID=0.3A pF ns nC Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=0.3A, VGS=0V - - 1.5 V Trr Reverse recovery time - 112 - ns Qrr Breakdown voltage temperature IS=0.3A, VGS=0V, dIF/dt=100A/us - 0.3 - uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 92mH, IAS = 0.3A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 0.3A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2/7 SAMWIN SW1N60L Fig. 1. On-state characteristics Fig. 2. Transfer characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 0 ID , Drain Current [A] 10 ID , Drain Current [A] Top : -1 10 0 10 o 150 C o 25 C o -55 C ※ Notes : ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ -2 10 1. VDS = 50V 2. 250μs Pulse Test -1 10 -1 0 10 2 1 10 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On state current vs. diode forward voltage 35 30 IDR, Reverse Drain Current [A] RDS(ON), Drain-Source On-Resistance [¥]ط 40 VGS = 10V 25 20 15 VGS = 20V 10 5 0 0.00 ، طNote : TJ = 25،ة 0 10 150،ة 25،ة ، طNotes : 1. VGS = 0V 2. 250¥ىs Pulse Test -1 10 0.25 0.50 0.75 1.00 ID, Drain Current [A] Fig. 5. Capacitance characteristics (Non-Repetitive) 1.25 1.50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain voltage [V] Fig. 6. Gate charge characteristics Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 3/7 SAMWIN SW1N60L Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig. 8. On resistance variation vs. junction temperature 3.0 RDS(on), (Normalized) 1.1 1.0 0.9 ، طNotes : 1. VGS = 0 V 2. ID = 250 ¥ىA 0.8 -100 -50 0 50 100 150 200 o Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 ، طNotes : 1. VGS = 10 V 0.5 2. ID = 0.5 A 0.0 -100 -50 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig. 9. Maximum drain current vs. case temperature. Fig. 10. Maximum safe operating area ID' Drain Current [A] 0.4 0.3 0.2 0.1 0.0 25 50 75 100 125 150 o TC' Case Temperature [ C] Fig. 11. Transient thermal response curve Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 4/7 SAMWIN SW1N60L Fig. 12. Gate charge test circuit & waveform VGS Same type as DUT QG VDS QGD QGS DUT VGS 1mA Charge Fig. 13. Switching time test circuit & waveform VDS RL RG 90% VDS VDD VIN 10VIN DUT 10% 10% td(on) td(off) tr tON tf tOFF Fig. 14. Unclamped Inductive switching test circuit & waveform 1 EAS = L BVDSS IAS BVDSS - VDD IAS VDS RG 2 BVDSS L X IAS2 X VDD ID(t) 10VIN DUT VDS(t) tp time Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 5/7 SAMWIN SW1N60L Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VF VDD Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 6/7 SAMWIN SW1N60L REVISION HISTORY Revision No. Changed Characteristics Responsible Date Issuer REV 1.0 Origination, First Release Alice Nie 2007.12.05 XZQ REV 2.0 Updated the format of datasheet and added Order Codes. Alice Nie 2011.03.24 XZQ WWW.SEMIPOWER.COM.CN 西安芯派电子科技有限公司 深圳市南方芯源科技有限公司 地址：西安市高新区高新一路25号创新大厦MF6 地址：深圳市福田区天安数码城时代大厦A座2005 电话：029 - 88253717 传真：029 - 88251977 电话：0755 - 83981818 传真：0755 - 83476838 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 7/7