SAMWIN SW7N90 N-channel MOSFET Features BVDSS : 900V TO-220F ID ■ High ruggedness ■ RDS(ON) (Max 1.8 Ω)@VGS=10V ■ Gate Charge (Typ 26nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested : 7.0A RDS(ON) : 1.8ohm 1 2 2 3 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. Order Codes Item 1 Sales Type SW F 7N90 Marking SW7N90 Package TO-220F Packaging TUBE Absolute maximum ratings Symbol VDSS ID Parameter Value Unit Drain to Source Voltage 900 V Continuous Drain Current (@TC=25oC) 7.0 A Continuous Drain Current (@TC=100oC) 4.4 A 28 A ± 30 V IDM Drain current pulsed VGS Gate to Source Voltage EAS Single pulsed Avalanche Energy (note 2) 780 mJ EAR Repetitive Avalanche Energy (note 1) 21 mJ dv/dt Peak diode Recovery dv/dt (note 3) 4.0 V/ns 32 W 0.8 W/oC -55 ~ + 150 oC 300 oC Value Unit PD TSTG, TJ TL (note 1) Total power dissipation (@TC Derating Factor above =25oC) 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Rthjc Thermal resistance, Junction to case 3.87 oC/W Rthcs Thermal resistance, Case to Sink 0.5 oC/W Rthja Thermal resistance, Junction to ambient 62.5 oC/W Mar. 2011. Rev. 2.0 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 1/7 SAMWIN SW7N90 Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit 900 - - V Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC - 0.96 - V/oC - 10 uA Drain to source leakage current VDS=800V, VGS=0V - IDSS VDS=640V, TC=125oC - - 100 uA Gate to source leakage current, forward VGS=30V, VDS=0V - - 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V - - -100 nA IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA 3.0 - 5.0 V RDS(ON) Drain to source on state resistance VGS=10V, ID = 1.5A - - 1.8 Ω - 1440 1880 - 140 185 Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 17 23 td(on) Turn on delay time - 35 80 - 80 170 - 95 200 Fall time - 55 120 Qg Total gate charge - 40 52 Qgs Gate-source charge - 8.5 - Qgd Gate-drain charge - 20 - Min. Typ. Max. Unit - - 6.4 A - - 25.6 A tr td(off) tf Rising time Turn off delay time VGS=0V, VDS=25V, f=1MHz VDS=400V, ID=3.0A, RG=25Ω VDS=640V, VGS=10V, ID=3.0A pF ns nC Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=3.0A, VGS=0V - - 1.4 V Trr Reverse recovery time - 400 - ns Qrr Breakdown voltage temperature IS=3.0A, VGS=0V, dIF/dt=100A/us - 4.3 - uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 67mH, IAS = 3.0A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 3.0A, di/dt = 200A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2/7 SAMWIN SW7N90 Fig. 1. On-state characteristics Fig. 2. Transfer characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On state current vs. diode forward voltage Fig. 5. Capacitance characteristics (Non-Repetitive) Fig. 6. Gate charge characteristics Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 3/7 SAMWIN Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig. 9. Maximum drain current vs. case temperature. SW7N90 Fig. 8. On resistance variation vs. junction temperature Fig. 10. Maximum safe operating area Fig. 11. Transient thermal response curve Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 4/7 SAMWIN SW7N90 Fig. 12. Gate charge test circuit & waveform VGS Same type as DUT QG VDS QGD QGS DUT VGS 1mA Charge Fig. 13. Switching time test circuit & waveform VDS RL RG 90% VDS VDD VIN 10VIN DUT 10% 10% td(on) td(off) tr tON tf tOFF Fig. 14. Unclamped Inductive switching test circuit & waveform 1 EAS = L BVDSS IAS BVDSS - VDD IAS VDS RG 2 BVDSS L X IAS2 X VDD ID(t) 10VIN DUT VDS(t) tp time Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 5/7 SAMWIN SW7N90 Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VF VDD Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 6/7 SAMWIN SW7N90 REVISION HISTORY Revision No. Changed Characteristics Responsible Date Issuer REV 1.0 Origination, First Release Alice Nie 2007.12.05 XZQ REV 2.0 Updated the format of datasheet and added Order Codes. Alice Nie 2011.03.24 XZQ WWW.SEMIPOWER.COM.CN 西安芯派电子科技有限公司 深圳市南方芯源科技有限公司 地址：西安市高新区高新一路25号创新大厦MF6 地址：深圳市福田区天安数码城时代大厦A座2005 电话：029 - 88253717 传真：029 - 88251977 电话：0755 - 83981818 传真：0755 - 83476838 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 7/7