SAMWIN SW12N6 5 N-channel MOSFET TO-220F Features TO-220 BVDSS : 650V : 12.0A ID ■ High ruggedness ■ RDS(ON) (Max 0.8 Ω)@VGS=10V ■ Gate Charge (Typ 47nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested RDS(ON) : 0.8ohm 1 1 2 3 2 2 3 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. Absolute maximum ratings Symbol VDSS Value Parameter TO-220 Drain to Source Voltage Continuous Drain Current (@TC=25 C) Continuous Drain Current (@TC=100oC) IDM Drain current pulsed VGS Gate to Source Voltage EAS Single pulsed Avalanche Energy EAR dv/dt PD TSTG, TJ TL Unit 650 o ID TO-220F V 12.0 12.0* A 7.0 7.0* A (note 1) 48 A ±30 V (note 2) 797 mJ Repetitive Avalanche Energy (note 1) 16.5 mJ Peak diode Recovery dv/dt (note 3) 5.0 V/ns Total power dissipation (@TC=25oC) 165 54* W Derating Factor above 25oC 1.32 0.43 W/oC Operating Junction Temperature & Storage Temperature -55 ~ + 150 o C 300 o C Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Value TO-220 TO-220F 0.76 2.30 Rthjc Thermal resistance, Junction to case Rthcs Thermal resistance, Case to Sink 0.5 Rthja Thermal resistance, Junction to ambient 62.5 Mar. 2011. Rev. 2.0 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Unit o C/W oC/W o C/W 1/7 SAMWIN SW12N6 5 Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit 650 - - V Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC - 0.63 - V/oC - 1 uA Drain to source leakage current VDS=650V, VGS=0V - IDSS VDS=520V, TC=125oC - - 50 uA Gate to source leakage current, forward VGS=30V, VDS=0V - - 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V - - -100 nA 2.0 - 4.0 V 0.7 0.8 Ω 1950 2530 156 205 IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID = 6A Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance 32 42 td(on) Turn on delay time 25 60 73 180 148 300 Fall time 76 160 Qg Total gate charge 47 60 Qgs Gate-source charge 9 - Qgd Gate-drain charge 12 - Min. Typ. Max. Unit - - 12 A - - 48 A tr td(off) tf VGS=0V, VDS=25V, f=1MHz Rising time Turn off delay time VDS=325V, ID=12A, RG=25Ω pF ns VDS=520V, VGS=10V, ID=12A nC Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=12A, VGS=0V - - 1.5 V Trr Reverse recovery time - 400 - ns Qrr Breakdown voltage temperature IS=12A, VGS=0V, dIF/dt=100A/us - 4.8 - uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 13mH, IAS = 12.0A, VDD = 50V, RG=50Ω, Starting TJ = 25oC 3. ISD ≤ 12.0A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2/7 SAMWIN SW12N6 5 Fig. 1. On-state characteristics Fig. 2. Transfer characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 1 10 1 10 o 150 C ID, Drain Current [A] ID, Drain Current [A] Top : o -55 C o 25 C 0 10 ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ 0 10 ※ Notes : 1. VDS = 40V 2. 250µs Pulse Test -1 10 0 1 10 10 2 4 1.5 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 8 10 Fig. 4. On state current vs. diode forward voltage Fig. 3. On-resistance variation vs. drain current and gate voltage VGS = 10V 1.0 VGS = 20V 0.5 6 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 1 10 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test 25℃ ※ Note : TJ = 25℃ -1 0 5 10 15 20 25 30 35 10 0.2 0.4 ID, Drain Current [A] Fig. 5. Capacitance characteristics (Non-Repetitive) 3500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 0.8 Coss 1500 1000 1.2 1.4 12 VDS = 120V ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 500 VGS, Gate-Source Voltage [V] Ciss 2000 1.0 Fig. 6. Gate charge characteristics 10 2500 Capacitance [pF] 0.6 VSD, Source-Drain voltage [V] VDS = 300V VDS = 480V 8 6 4 2 ※ Note : ID = 12A 0 -1 10 0 0 10 1 10 VDS, Drain-Source Voltage [V] 0 10 20 30 40 50 QG, Total Gate Charge [nC] Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 3/7 SAMWIN SW12N6 5 Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig. 8. On resistance variation vs. junction temperature RDS(on), (Normalized) Drain-Source On-Resistance 3.0 1.1 1.0 0.9 *. Notes : 1. VGS = 0 V 2. ID = 250 uA 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 *. Notes : 1. VGS = 10 V 0.5 2. ID = 6.0 A 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig. 9. Maximum drain current vs. case temperature. Fig. 10. Maximum safe operating area (TO-220F) 14 Operation in This Area is Limited by R DS(on) 2 10 12 10 ID, Drain Current [A] ID, Drain Current [A] 8 6 4 1 ms 10 ms 1 10 100 ms DC 0 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 25 10 µs 100 µs 2 -2 50 75 100 125 10 150 0 1 10 2 10 TC, Case Temperature [℃] 10 3 10 VDS, Drain-Source Voltage [V] Fig. 11. Transient thermal response curve 10 Zθ JC(t), Thermal Response BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 0 D = 0 .5 10 0 .2 -1 ※ N o te s : 1 . Z θ J C (t) = 0 .5 6 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .1 0 .0 5 10 10 PDM 0 .0 2 0 .0 1 -2 t1 s in g le p u ls e -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 4/7 SAMWIN SW12N6 5 Fig. 12. Gate charge test circuit & waveform VGS Same type as DUT QG VDS QGD QGS DUT VGS 1mA Charge Fig. 13. Switching time test circuit & waveform VDS RL RG 90% VDS VDD VIN 10VIN DUT 10% 10% td(on) td(off) tr tON tf tOFF Fig. 14. Unclamped Inductive switching test circuit & waveform 1 EAS = L BVDSS IAS 2 BVDSS L X IAS2 X BVDSS - VDD IAS VDS RG VDD ID(t) 10VIN DUT VDS(t) tp time Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 5/7 SAMWIN SW12N6 5 Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VF VDD Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 6/7 SAMWIN SW12N65 REVISION HISTORY Revision No. Changed Characteristics Responsible Date Issuer REV 1.0 Origination, First Release Alice Nie 2007.12.05 XZQ REV 2.0 Updated the format of datasheet and added Order Codes. Alice Nie 2011.03.24 XZQ WWW.SEMIPOWER.COM.CN 西安芯派电子科技有限公司 深圳市南方芯源科技有限公司 地址：西安市高新区高新一路25号创新大厦MF6 地址：深圳市福田区天安数码城时代大厦A座2005 电话：029 - 88253717 传真：029 - 88251977 电话：0755 - 83981818 传真：0755 - 83476838 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 7/7