SAMWIN SW100N03 N-channel MOSFET Features TO-220 TO-251 TO-252 TO-263 BVDSS : 30V ID ■ High ruggedness ■ RDS(ON) (Max 5.3mΩ)@VGS=10V ■ Gate Charge (Typ 146nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1 : 100A RDS(ON) : 5.3 mΩ 1 2 2 3 1 2 3 1 3 2 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize RDS(ON), low gate charge and high rugged avalanche characteristics. Order Codes Item 1 2 3 4 Sales Type SW P 100N03 SW I 100N03 SW D 100N03 SW B 100N03 Marking SW100N03 SW100N03 SW100N03 SW100N03 Package TO-220 TO-251 TO-252 TO-263 Packaging TUBE TUBE REEL REEL Absolute maximum ratings Symbol VDSS Parameter Drain to Source Voltage ID Continuous Drain Current IDM Drain current pulsed VGS Gate to Source Voltage EAS Single pulsed Avalanche Energy PD TSTG, TJ TL (note 1) Total power dissipation (@TC Derating Factor above (note 2) =25oC) 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Value Unit 30 V 100 A 400 A ± 20 V 875 mJ 100 W 0.67 W/oC -55 ~ + 150 oC 300 oC Thermal characteristics Symbol Value Parameter Min. Rthjc Thermal resistance, Junction to case Rthcs Thermal resistance, Case to Sink Rthja Thermal resistance, Junction to ambient Jun. 2011. Rev. 2.0 Typ. Unit Max. 1.5 oC/W oC/W 0.5 62.5 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. oC/W 1/5 SAMWIN SW100N03 Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit VGS=0V, ID=250uA 30 - - V VDS=30V, VGS=0V - - 1 uA VDS=24V, TC=125oC - - 100 uA Gate to source leakage current, forward VGS=20V, VDS=0V - - 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V - - -100 nA Off characteristics BVDSS IDSS IGSS Drain to source breakdown voltage Drain to source leakage current On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA 1.0 - 3.0 V RDS(ON) Drain to source on state resistance VGS=10V, ID = 50A - 4.2 5.3 mΩ - 9500 - - 800 - Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 300 - td(on) Turn on delay time - 25.7 50 - 10 20 - 128 200 Fall time - 34 70 Qg Total gate charge - 50 65 Qgs Gate-source charge - 20.8 - Qgd Gate-drain charge - 19 - tr td(off) tf Rising time Turn off delay time VGS=0V, VDS=15V, f=1MHz VDS=15V, ID=1A, RG=6Ω ,VGS=10V VDS=15V, VGS=5V, ID=16A pF ns nC Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=110A, VGS=0V Min. Typ. Max. Unit - - 90 A - - 1.5 V ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 200uH, IAS = 110A, VDD = 25V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 110A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2/5 SAMWIN SW100N03 Fig. 1. Output Characteristics Fig. 2. Transfer characteristics Fig. 3. On-resistance variation with Temperature Fig. 4. Gate Threshold Variation with Temperature Fig. 5. Gate-Charge characteristics Fig. 6. Capacitance Characteristics Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 3/5 SAMWIN Fig 7. Body-Diode Characteristics SW100N03 Fig. 8. Maximum Safe Operating Area Fig. 9. Normalized Thermal Transient Impedance Curve Fig.10. Test Circuit And Waveform Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 4/5 SAMWIN SW100N03 REVISION HISTORY Revision No. Changed Characteristics Responsible Date Issuer REV 1.0 Origination, First Release Alice Nie 2010.12.05 XZQ REV 2.0 Updated the format of datasheet and added Order Codes. Alice Nie 2011.06.02 XZQ WWW.SEMIPOWER.COM.CN 西安芯派电子科技有限公司 深圳市南方芯源科技有限公司 地址：西安市高新区高新一路25号创新大厦MF6 地址：深圳市福田区天安数码城时代大厦A座2005 电话：029 - 88253717 传真：029 - 88251977 电话：0755 - 83981818 传真：0755 - 83476838 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 5/5