SAMWIN SW6N65 N-channel MOSFET Features TO-220F TO-251 TO-252 BVDSS : 600V ID ■ High ruggedness ■ RDS(ON) (Max 1.5Ω)@VGS=10V ■ Gate Charge (Typ 20nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1 1 2 1 2 3 3 : 6A RDS(ON) :1.5ohm 2 3 2 1. Gate 2. Drain 3. Source 1 General Description These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology. This advanced technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers 3 Order Codes Item 1 2 3 Sales Type SW F 6N65 SW I 6N65 SW D 6N65 Marking SW6N65 SW6N65 SW6N65 Package TO-220F TO-251 TO-252 Packaging TUBE TUBE REEL Absolute maximum ratings Symbol VDSS Value Parameter TO-220F Drain to Source Voltage (@TC=25oC) TO-251/252 Unit 600 V 6.0 A 24 A ± 30 V ID Continuous Drain Current IDM Drain current pulsed VGS Gate to Source Voltage EAS Single pulsed Avalanche Energy (note 2) 250 mJ EAR Repetitive Avalanche Energy (note 1) 10.6 mJ dv/dt Peak diode Recovery dv/dt (note 3) 4.5 V/ns 64 W 0.45 W/oC -55 ~ + 150 oC PD TSTG, TJ TL (note 1) Total power dissipation (@TC Derating Factor above =25oC) 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 275 oC Thermal characteristics Symbol Parameter Value Min. Typ. Max. oC/W Rthjc Thermal resistance, Junction to case Rthcs Thermal resistance, Case to Sink 0.5 oC/W Rthja Thermal resistance, Junction to ambient 62.5 oC/W Jun. 2011. Rev. 2.0 3.58 Unit Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 1/7 SAMWIN SW6N65 Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit 600 - - V Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC - 0.5 - V/oC - 1 uA Drain to source leakage current VDS=600V, VGS=0V - IDSS VDS=480V, TC=125oC - - 10 uA Gate to source leakage current, forward VGS=30V, VDS=0V - - 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V - - -100 nA 2.0 - 4.0 V 1.3 1.5 Ω 600 700 75 95 IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID = 3A Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance 9 12 td(on) Turn on delay time 20 40 28 100 45 160 48 165 16.5 25 3.8 - 7.5 - Min. Typ. Max. Unit - - 6.0 A - - 24.0 A tr td(off) tf Rising time Turn off delay time VGS=0V, VDS=25V, f=1MHz VDS=300V, ID=6A Fall time Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDS=480V, VGS=10V, ID=6A pF ns nC Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=6A, VGS=0V - - 1.4 V Trr Reverse recovery time - 250 - ns Qrr Breakdown voltage temperature IS=6A, VGS=0V, dIF/dt=100A/us - 1.5 - uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 360uH, IAS = 30.0A, VDD = 25V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 30.0A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2/7 SAMWIN SW6N65 Fig. 1. On-state characteristics Fig. 2. Transfer characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On state current vs. diode forward voltage Fig. 5. Capacitance characteristics (Non-Repetitive) Fig. 6. Gate charge characteristics Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 3/7 SAMWIN Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig. 9. Maximum drain current vs. case temperature. SW6N65 Fig. 8. On resistance variation vs. junction temperature Fig. 10. Maximum safe operating area Fig. 11. Transient thermal response curve Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 4/7 SAMWIN SW6N65 Fig. 12. Gate charge test circuit & waveform VGS Same type as DUT QG VDS QGD QGS DUT VGS 1mA Charge Fig. 13. Switching time test circuit & waveform VDS RL RG 90% VDS VDD VIN 10VIN DUT 10% 10% td(on) td(off) tr tON tf tOFF Fig. 14. Unclamped Inductive switching test circuit & waveform 1 EAS = L BVDSS IAS BVDSS - VDD IAS VDS RG 2 BVDSS L X IAS2 X VDD ID(t) 10VIN DUT VDS(t) tp time Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 5/7 SAMWIN SW6N65 Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VF VDD Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 6/7 SAMWIN SW6N65 REVISION HISTORY Revision No. Changed Characteristics Responsible Date Issuer REV 1.0 Origination, First Release Alice Nie 2010.12.05 XZQ REV 2.0 Updated the format of datasheet and added Order Codes. Alice Nie 2011.06.02 XZQ WWW.SEMIPOWER.COM.CN 西安芯派电子科技有限公司 深圳市南方芯源科技有限公司 地址：西安市高新区高新一路25号创新大厦MF6 地址：深圳市福田区天安数码城时代大厦A座2005 电话：029 - 88253717 传真：029 - 88251977 电话：0755 - 83981818 传真：0755 - 83476838 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 7/7