1N728WS SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE For super-high speed switching and wave detection circuit applications PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PP Top View Marking Code: "PP" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 30 V Reverse Voltage VR 30 V Forward Current IF 30 mA Peak Forward Current IFM 150 mA Junction Temperature Tj 125 O Storage Temperature Range Ts - 55 to + 125 O C C Characteristics at Ta = 25 OC Parameter Symbol Typ. Max. Unit Forward Voltage at IF = 1 mA at IF = 30 mA VF - 0.4 1 V Reverse Current at VR = 30 V IR - 0.3 µA Terminal Capacitance at VR = 1 V, f = 1 MHz CT 1.5 - pF Reverse Recovery Time at IF = IR = 10 mA, Irr = 1 mA, RL = 100 Ω trr 1 - ns Detection Efficiency at Vin = 3 V(peak), f = 30 MHz, RL = 3.9 KΩ, CL = 10 pF η 65 - % SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006 1N728WS SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006 1N728WS PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE A D E bp UNIT A bp mm 1.10 0.80 0.40 0.25 C 0.15 0.00 D E HE 1.80 1.60 1.35 1.15 2.80 2.30 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 01/09/2006