MMBTSC3838 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier application SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 20 V Collector Emitter Voltage VCEO 11 V Emitter Base Voltage VEBO 3 V IC 50 mA Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O Collector Current Collector Power Dissipation C C Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 5 mA Current Gain Group Collector Cutoff Current at VCB = 10 V Emitter Cutoff Current at VEB = 2 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 5 mA Transition Frequency at VCE = 10 V, IE = 10 mA, f = 500 MHz Output Capacitance at VCB = 10 V, f = 1 MHz Noise Figure at VCE = 6 V, IC = 2 mA , f = 500 MHz, Rg = 50 Ω R S Symbol Min. Typ. Max. Unit hFE hFE 56 120 - 160 240 - ICBO - - 0.5 µA IEBO - - 0.5 µA V(BR)CBO 20 - - V V(BR)CEO 11 - - V V(BR)EBO 3 - - V VCE(sat) - - 0.5 V fT 1.4 3.2 - GHz Cob - - 1.5 pF NF - 3.5 - dB SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 26/05/2007 MMBTSC3838 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 26/05/2007