SENSITRON SEMICONDUCTOR SHD226305 SHD226305B TECHNICAL DATA DATA SHEET 336, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: 500 Volt, 1.6 Ohm MOSFET Isolated and Hermetically Sealed Equivalent to IRFY430M MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. VGS=10V, TC = 25C VGS=10V, TC = 100C PULSED DRAIN CURRENT @ TC = 25C OPERATING AND STORAGE TEMPERATURE TERMAL RESISTANCE JUNCTION TO CASE TOTAL DEVICE DISSIPATION @ TC = 25C ELECTRICAL CHARACTERISTICS DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = 0V, ID = 1.0mA DRAIN TO SOURCE ON STATE RESISTANCE VGS = 10V, ID = 2.4A GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250mA FORWARD TRANSCONDUCTANCE VDS 15V, ID = 2.4A ZERO GATE VOLTAGE DRAIN CURRENT, TJ = 25C (VDS = 0.8xMax. Rating, VGS = 0V), TJ = 125C GATE TO SOURCE LEAKAGE FORWARD VGS = 20V GATE TO SOURCE LEAKAGE REVERSE VGS = -20V TOTAL GATE CHARGE VGS = 10 V, GATE TO SOURCE CHARGE VDS = 0.5 x. VDS Max., GATE TO DRAIN CHARGE ID =3.7A TURN ON DELAY TIME VDD = 250V, RISE TIME ID = 3.7A, TURN OFF DELAY TIME RG = 7.5W, FALL TIME VGS = 10V DIODE FORWARD VOLTAGE TJ = 25C, IS = 3.7A, VGS = 0V REVERSE RECOVERY TIME TJ = 25C, Is = 3.7A, di/dt = 100A/msec, REVERSE RECOVERY CHARGE VDD 50V INPUT CAPACITANCE VGS = 0V, VDS = 25V OUTPUT CAPACITANCE f=1MHz REVERSE TRANSFER CAPACITANCE SYMBOL VGS ID MIN. - TYP. - IDM TOP/TSTG R JC PD -55 - BVDSS UNITS Volts Amps - MAX. 20 3.7 2.4 14 +150 1.45 80 500 - - Volts RDS(ON) VGS(th) gfs - - 2.0 1.5 - IDSS - - IGSS - - Qg Qgs Qgd td(ON) tr td(OFF) tf VSD 19.8 2.2 5.5 - - - trr - Qrr Ciss Coss Crss - 1.6 4.0 - Amps C C/W Watts W Volts S(1/W) - 25 250 100 -100 29.5 4.6 19.7 35 30 55 30 1.4 Volts - 900 nsec 7.0 - mC 610 135 65 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 World Wide Web - http://www.sensitron.com E-mail Address - [email protected] mA nA nC nsec pF SHD226305 SHD226305B SENSITRON DATA SHEET 336 REVISION A MECHANICAL DIMENSIONS: in Inches / mm TO-257 .150 (3.81 Dia. .140 3.56) .665 (16.89 .645 16.38) .537 (13.64 .527 13.39) 1.132 (28.75 1.032 26.21) 1 2 .045 (1.14 .035 0.89) .430 (10.92 .410 10.41) 3 .035 (0.89 .025 0.63) 3 Places .100(2.54) BSC 2 Places .150 (3.81 Dia. .140 3.56) .717 (18.21 .687 17.45) .200 (5.08 .190 4.82) .420 (10.67 .410 10.41) .120(3.05) BSC .200 (5.08 .190 4.82) .420 (10.67 .410 10.41) .665 (16.89 .645 16.38) .537 (13.64 .527 13.39) 1 2 .045 (1.14 .035 0.89) .430 (10.92 .410 10.41) .120(3.05) BSC .035 (0.89 .025 0.63) 3 Places .060(1.52)R 3 .100(2.54) BSC 2 Places .170(4.32) .250(6.35) Min Lead Form Option B PINOUT TABLE DEVICE TYPE MOSFET TO-257 PACKAGE PIN 1 DRAIN PIN 2 SOURCE PIN 3 GATE 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 World Wide Web - http://www.sensitron.com E-mail Address - [email protected] SENSITRON SEMICONDUCTOR TECHNICAL DATA DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. 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