SP828/829 SIGNAL PROCESSING EXCELLENCE High Efficiency Voltage Inverters ■ 99.9% Voltage Conversion Efficiency ■ +1.5V to +5.5V Input Voltage Range ■ +1.25 VIN Guaranteed Start-up ■ Inverts Input Supply Voltage ■ Low EMI Voltage Inverter ■ 50µA Quiescent Current for the SP828 ■ 130µA Quiescent Current for the SP829 ■ 25mA Output Current ■ Indefinite Output Short Circuit to GND ■ Low 20Ω Output Resistance ■ 12kHz Operating Frequency for the SP828 ■ 35kHz Operating Frequency for the SP829 ■ Pin Compatible Enhancement to MAX 828/829, TC828/829 ■ 5-pin SOT23 Package DESCRIPTION The SP828/829 devices are CMOS Charge Pump Voltage Inverters that can be implemented in designs requiring a negative voltage from a +5V supply. The SP828/829 devices are ideal for both battery-powered and board level voltage conversion applications with a typical operating current of 50µA for the SP828 and 130µA for the SP829. Both devices can output 25mA with a voltage drop of 500mV. These devices combine a low quiescent current with high efficiency (>95% over most of its load-current range). The SP828/829 provide a stable operating frequency, low output resistance and low EMI to enhance performance of critical analog circuitry. The SP828/829 devices are available in a space-saving 5-pin SOT23 Package. 5 C1+ VOUT 1 VIN 2 C1- 3 SP828DS/03 SP828 SP829 4 GND SP828/829 High Efficiency Voltage Inverters 1 © Copyright 1999 Sipex Corporation ABSOLUTE MAXIMUM RATINGS These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. VIN......................................................................+7.0V VOUT.....................................................................-7.0V VOUT Short Circuit to GND.............................Indefinite IOUT......................................................................50mA Storage Temperature........................-65˚C to +150˚C Power Dissipation per Package 5-pin SOT23 (derate 2.98 mW/oC above +70oC)..240mW Lead Temperature (Soldering)..........................300 oC ESD Rating......................2kV Human Body Model SPECIFICATIONS VIN = +5.0V, C1=C2=10µF for the SP828, C1=C2=3.3µF for the SP829, and TAMB= -40°C to +85°C unless otherwise noted. Typical values are taken specifically at TAMB=+25°C. Test Circuit Figure 19 unless otherwise noted. PARAMETER Supply Voltage MIN. TYP. MAX. 1.25 1.5 1.0 1.0 5.5 Supply Current UNITS CONDITIONS V RL=10kΩ, TAMB=+25° C, Note 1 RL=10kΩ, TAMB=-40° C to +85° C µA SP828, TAMB=+25° C, RL = ∞ SP828, TAMB=-40° C to +85° C, RL = ∞ SP829, TAMB=+25° C, RL = ∞ SP829, TAMB=-40° C to +85° C, RL = ∞ Ω IOUT=5mA, TAMB=+25° C IOUT=5mA, TAMB=-40° C to +85° C 50 80 115 130 200 300 21 50 65 8.4 6 24.5 19 12 15.6 20 45.5 54.3 95 99.9 % RL = ∞ Power Efficiency (Ideal) 98 % RL=10kΩ, NOTE 2 Power Efficiency (Actual) 97 91 % Output Resistance Oscillator Frequency Voltage Conversion Efficiency 35 kHz SP828, TAMB=+25° C SP828, TAMB=-40° C to +85° C SP829, TAMB=+25° C SP829, TAMB=-40° C to +85° C RL=10kΩ, NOTE 3 IOUT = 10mA, NOTE 3 NOTE 1: VOUT = -VIN +200mV NOTE 2: Power Efficiency (Ideal) = NOTE 3: Power Efficiency (Actual) = SP828DS/03 VOUT x IOUT -VIN x (-VIN/RL) VOUT x IOUT VIN x IIN SP828/829 High Efficiency Voltage Inverters 2 © Copyright 1999 Sipex Corporation PINOUT PIN ASSIGNMENTS Pin 1— VOUT — Inverting charge pump output. VIN 2 C1- 3 Pin 2 — VIN — Input to the positive power supply. 5 C1+ VOUT 1 SP828 SP829 Pin 3 — C1- — Negative terminal to the charge pump capacitor. 4 GND Pin 4 — GND — Ground reference. Pin 5 — C1+ — Positive terminal to the charge pump capacitor. TYPICAL PERFORMANCE CHARACTERISTICS VIN = +5.0V, C1 = C2 = C3 = 10µF for SP828, C1 = C2 = C3 = 3.3µF for SP829, and TAMB = 25oC unless otherwise noted. The SP828/829 devices use the circuit found in Figure 19 when obtaining the following typical performance characteristics (unless otherwise noted). 80 90 70 80 ROUT (Ohm) ROUT (Ohm) 60 50 40 30 60 50 40 30 20 20 10 10 0 1.5 2.5 VIN = 3.3V 0 -60 5.5 3.5 4.5 VIN (V) Figure 1. Output Resistance vs. Supply Voltage SP828DS/03 VIN = 1.5V 70 VIN = 5.0V 90 40 -10 Temperature (oC) 140 Figure 2. Output Resistance vs. Temperature SP828/829 High Efficiency Voltage Inverters 3 © Copyright 1999 Sipex Corporation TYPICAL PERFORMANCE CHARACTERISTICS VIN = +5.0V, C1 = C2 = C3 = 10µF for SP828, C1 = C2 = C3 = 3.3µF for SP829, and TAMB = 25oC unless otherwise noted. The SP828/829 devices use the circuit found in Figure 19 when obtaining the following typical performance characteristics (unless otherwise noted). 14 40 Pump Frequency (kHz) 13 fOUT (kHz) 12 11 10 9 8 7 6 0.5 1.5 2.5 3.5 VIN (V) 4.5 35 30 25 0.5 5.5 Figure 3. Charge Pump Frequency vs. Supply Voltage for the SP828 1.5 2.5 3.5 4.5 5.5 Supply Voltage (V) Figure 4. Charge Pump Frequency vs. Supply Voltage for the SP829 15 41 VIN = 5.0V 39 Pump Frequency (kHz) VIN = 5.0V fOUT (kHz) 14 VIN = 3.3V 13 VIN = 1.5V 12 11 -60 -10 90 40 Temperature (oC) 35 VIN = 3.3V 33 31 VIN = 1.5V 29 27 25 -50 140 Figure 5. Charge Pump Frequency vs. Temperature for the SP828 SP828DS/03 37 50 0 Temperature (C) 100 Figure 6. Charge Pump Frequency vs. Temperature for the SP829 SP828/829 High Efficiency Voltage Inverters 4 © Copyright 1999 Sipex Corporation TYPICAL PERFORMANCE CHARACTERISTICS VIN = +5.0V, C1 = C2 = C3 = 10µF for SP828, C1 = C2 = C3 = 3.3µF for SP829, and TAMB = 25oC unless otherwise noted. The SP828/829 devices use the circuit found in Figure 19 when obtaining the following typical performance characteristics (unless otherwise noted). 70 50 40 VIN = 3.3V; VOUT = -2.5V 30 20 VIN = 2V; VOUT = -1.5V 10 30 VIN = 3.3V; VOUT = -2.5V 25 20 15 VIN = 2V; VOUT = -1.5V 10 5 0 0 0 30 20 10 Capacitance (µF) 40 0 Figure 7. Output Current vs. Capacitance for the SP828 500 VIN = 5.0V; VOUT = -3.8V 400 300 200 VIN = 3.3V; VOUT = -2.5V 100 VIN = 2V; 0 VOUT = -1.5V 0 30 20 10 Capacitance (µF) VIN = 5.0V; VOUT = -3.8V 250 200 150 100 VIN = 3.3V; VOUT = -2.5V 50 VIN = 2V; VOUT = -1.5V 0 40 0 Figure 9. Output Voltage Ripple vs. Capacitance for the SP828 SP828DS/03 40 300 Output Ripple (mVp-p) 600 30 20 10 Capacitance (µF) Figure 8. Output Current vs. Capacitance for the SP829 700 Output Ripple (mVp-p) VIN = 5.0V; VOUT = -3.8V 35 Output Current (mA) 60 Output Current (mA) 40 VIN = 5.0V; VOUT = -3.8V 20 30 10 Capacitance (µF) 40 Figure 10. Output Voltage Ripple vs. Capacitance for the SP829 SP828/829 High Efficiency Voltage Inverters 5 © Copyright 1999 Sipex Corporation TYPICAL PERFORMANCE CHARACTERISTICS VIN = +5.0V, C1 = C2 = C3 = 10µF for SP828, C1 = C2 = C3 = 3.3µF for SP829, and TAMB = 25oC unless otherwise noted. The SP828/829 devices use the circuit found in Figure 19 when obtaining the following typical performance characteristics (unless otherwise noted). 0 60 -1 Output Voltage (V) IIN (µA) 50 40 30 20 -4 VIN = 5.0V -6 1.5 2.5 3.5 VIN (V) 4.5 0 5.5 30 40 50 10 20 Output Current (mA) 60 Figure 12. Output Voltage vs. Output Current Figure 11. SP828 Supply Current vs. Supply Voltage 100 98 96 94 92 90 88 86 84 82 80 100 98 Voltage Efficiency (%) Power Efficiency (%) VIN = 3.3V -3 -5 10 0 0.5 VIN = 2V -2 96 94 92 90 88 86 84 82 0 30 20 10 Output Current (mA) 80 40 Figure 13. Power Efficiency vs. Output Current SP828DS/03 0 30 20 10 Output Current (mA) 40 Figure 14. Voltage Efficiency vs. Output Current SP828/829 High Efficiency Voltage Inverters 6 © Copyright 1999 Sipex Corporation TYPICAL PERFORMANCE CHARACTERISTICS VIN = +5.0V, C1 = C2 = C3 = 10µF for SP828, C1 = C2 = C3 = 3.3µF for SP829, and TAMB = 25oC unless otherwise noted. The SP828/829 devices use the circuit found in Figure 19 when obtaining the following typical performance characteristics (unless otherwise noted). 100 100 Voltage Efficiency (%) 110 Voltage Efficiency (%) 110 90 80 70 80 70 60 60 50 0.5 90 1.5 2.5 3.5 4.5 VIN (V) 50 0.5 5.5 Figure 15. Voltage Efficiency vs. Supply Voltage with a 10kΩ load 2.5 3.5 4.5 VIN (V) 5.5 Figure 16. Voltage efficiency vs. Supply Voltage without a Load VIN = 3.3V VOUT = -3.2V IL = 5mA VIN = 3.3V VOUT = -3.2V IL = 5mA Figure 17. Output Noise and Ripple for the SP828 SP828DS/03 1.5 Figure 18. Output Noise and Ripple for the SP829 SP828/829 High Efficiency Voltage Inverters 7 © Copyright 1999 Sipex Corporation VOUT 1 VIN 2 C1- C2 RL + 3 5 SP828 SP829 4 C1+ GND C3 C1 Figure 19. SP828/829 in its Typical Operating Circuit as a Negative Voltage Converter; this Circuit Was Used to Obtain the Typical Performance Characteristics Found in Figures 1 Through 18 (unless otherwise noted) VOUT 1 VIN C2 2 C1- RL 3 5 SP828 SP829 4 C1+ GND C3 C1 Figure 20. SP828/829 Connected as a Voltage Inverter with the load from VOUT to VIN SP828DS/03 SP828/829 High Efficiency Voltage Inverters 8 © Copyright 1999 Sipex Corporation DESCRIPTION The SP828/829 devices are CMOS Charge Pump Voltage Converters that can be used to invert a +1.5V to +5.5V input voltage. These devices are ideal for designs involving battery-powered and board level voltage conversion applications. VOUT = -VIN VIN The typical operating frequency of the SP828 is 12kHz. The typical operating frequency of the SP829 is 35kHz. The SP828 has a typical operating current of 50µA and the SP829 operates at 130µA. Both devices can output 25mA with a voltage drop of 500mV. These devices are ideal for both battery-powered and board level voltage inverter applications combining a low quiescent current with high efficiency (<95% over most of its load-current range). S1 C1 S3 S2 C2 S4 VOUT Figure 21. Circuit for an Ideal Voltage Inverter THEORY OF OPERATION Charge-Pump Output The output of the SP828/829 devices is not regulated and therefore is dependent on the output resistance and the amount of load current. As the load current increases, losses may slightly increase at the output and the voltage may become slightly more positive. The loss at the negative output, VLOSS, equals the current draw, IOUT, from VOUT times the negative converter's source resistance, RS: The SP828/829 devices should theoretically produce an inverted input voltage. In real world applications, there are small voltage drops at the output that reduce efficiency. The circuit of an ideal voltage inverter can be found in Figure 21. The voltage inverters require two external capacitors to store the charge. A description of the two phases follows: Phase 1 In the first phase of the clock cycle, switches S2 and S4 are opened and S1 and S3 closed. This connects the flying capacitor, C1, from VIN to ground. C1 charges up to the input voltage applied at VIN. VLOSS = IOUT x RS. The actual inverted output voltage at VOUT will equal the inverted voltage difference of VIN and VLOSS: Phase 2 In the second phase of the clock cycle, switches S2 and S4 are closed and S1 and S3 are opened. This connects the flying capacitor, C1, in parallel with the output capacitor, C2. The charge stored in C1 is now transferred to C2. Simultaneously, the negative side of C2 is connected to VOUT and the positive side is connected to ground. With the voltage across C2 smaller than the voltage across C1, the charge flows from C1 to C2 until the voltage at the VOUT equals -VIN. SP828DS/03 VOUT = -(VIN - VLOSS). Efficiency Theoretically, the total power loss of a switched capacitor voltage converter can be summed up as follows: ∑PLOSS = PINT + PCAP + PCONV, where PLOSS is the total power loss, PINT is the total internal loss in the IC including any losses in the MOSFET switches, PCAP is the resistive loss of SP828/829 High Efficiency Voltage Inverters 9 © Copyright 1999 Sipex Corporation where the charge pump capacitors, and PCONV is the total conversion loss during charge transfer between the flying and output capacitors. These are the three theoretical factors that may effect the power efficiency of the SP828/829 devices in designs. POUT = VOUT x IOUT Internal losses come from the power dissipated in the IC's internal circuitry. PIN = VIN x IIN Losses in the charge pump capacitors will be induced by the capacitors' ESR. The effects of the ESR losses and the output resistance can be found in the following equation: where POUT is the power output, VOUT is the output voltage, IOUT is the output current, PIN is the power from the supply driving the SP828/ 829 devices, VIN is the supply input voltage, and IIN is the supply input current. and IOUT2 x ROUT = PCAP + PCONV Ideal Efficiency The ideal efficiency is not the true power efficiency because it is not calculated relative to the input power which includes the input current losses in the charge pump. The ideal efficiency can be determined with the following equation: and ROUT ≈ 4 x (2 x RSWITCHES + ESRC1) + 1 ESRC2 + fOSC x C1 , where IOUT is the output current, ROUT is the circuit's output resistance, RSWITCHES is the internal resistance of the MOSFET switches, ESRC1 and ESRC2 are the ESR of their respective capacitors, and fOSC is the oscillator frequency. This term with fOSC is derived from an ideal switchedcapacitor circuit as seen in Figure 22. Efficiency (IDEAL) = POUT x 100% , POUT(IDEAL) where POUT(IDEAL) = -VIN x -VIN , RL Conversion losses will happen during the charge transfer between the flying capacitor, C1, and the output capacitor, C2, when there is a voltage difference between them. PCONV can be determined by the following equation: and POUT is the measured power output. Both efficiencies are provided to designers for comparison. f VOUT V+ PCONV = fOSC x [ 1/2 x C1 x (VIN2 - VOUT2) + C1 /2 x C2 x (VRIPPLE2 - 2 x VOUT x VRIPPLE) ]. 1 C2 RL Actual Efficiency To determine the actual efficiency of the SP828/ 829 device operation, a designer can use the following equation: Requivalent VOUT V+ Efficiency (ACTUAL) = POUT x 100% , PIN Requivalent = 1 f x C1 C2 RL Figure 22. Equivalent Circuit for an Ideal Switched Capacitor SP828DS/03 SP828/829 High Efficiency Voltage Inverters 10 © Copyright 1999 Sipex Corporation Input Bypass Capacitor The bypass capacitor at the input pin will reduce AC impedance and the impact of any of the SP828/829 devices' switching noise. It is recommended that for heavy loads a bypass capacitor approximately equal to the flying capacitor, C1, be used. For light loads, the value of the bypass capacitor can be reduced. APPLICATION INFORMATION For the following applications, C1 = C2 = 10µF for the SP828 and C1 = C2 = 3.3µF for the SP829. Capacitor Selection Low ESR capacitors are needed to obtain low output resistance. Refer to Table 1 for some suggested low ESR capacitors. The output resistance of the SP828/829 devices is a function of the ESR of C1 and C2. This output resistance can be determined by the equation previously provided in the Efficiency section: When loading the SP828/829 devices from IN to OUT, the input current remains constant (disregarding any spikes due to internal switching). Implementing a 0.1µF bypass capacitor should be sufficient. When loading the SP828/829 devices from OUT to GND, the current from the supply will flow into the input for half of the cycle and will be zero for the other half of the cycle. Designers should implement a large bypass capacitor (C3 = C1) if the supply has a high AC impedance. ROUT ≈ 4 x (2 x RSWITCHES + ESRC1) + 1 ESRC2 + fOSC x C1 , where ROUT is the circuit output resistance, RSWITCHES is the internal resistance of the MOSFET switches, ESRC1 and ESRC2 are the ESR of their respective capacitors, and fOSC is the oscillator frequency. This term with fOSC is derived from an ideal switched-capacitor circuit as seen in Figure 21. Negative Voltage Converter The typical operating circuit for the SP828/829 devices is a negative voltage converter. Refer to Figure 19. This circuit is used to obtain the Typical Performance Characteristics found in Figures 1 to 18 (unless otherwise noted). Minimizing the ESR of C1 and C2 will minimize the total output resistance and will improve the efficiency. Voltage Inverter with the Load from VOUT to VIN A designer can find the most common application for the SP828/829 devices in Figure 20 as a voltage inverter. The only external components needed are 3 capacitors: the flying capacitor, C1, the output capacitor, C2, and the bypass capacitor, C3 (if necessary). Flying Capacitor Decreasing flying capacitor, C1, values will increase the output resistance of the SP828/829 devices while increasing C1 will reduce the output resistance. There is a point where increasing C1 will have a negligible effect on the output resistance due to the the domination of the output resistance by the internal MOSFET switch resistance and the total capacitor ESR. Driving Excessive Loads The output should never be pulled above ground. A designer should implement a Schottky diode (1N5817) from OUT to GND when driving heavy loads where a higher supply is sourcing current into OUT. Refer to Figure 23 for this circuit connection. Output Capacitor Increasing output capacitor, C2, values will decrease the output ripple voltage. Reducing the ESR of C2 will reduce both output ripple voltage and output resistance. If higher output ripple can be tolerated in designs, smaller capacitance values for C2 should be used with light loads. The following equation can be used to calculate the peak-to-peak ripple voltage: IOUT VRIPPLE = 2 x IOUT x ESRC2 + fOSC x C2 . SP828DS/03 SP828/829 High Efficiency Voltage Inverters 11 © Copyright 1999 Sipex Corporation GND 4 SP828 SP829 1 OUT 1N5817 Figure 23. Protection for Heavy Loads C3 +VIN D1 = D2 = 1N4148 D1 D2 IN VOUT1 2 C1+ GND C1 C1- 5 SP828 SP829 C4 4 1 3 OUT VOUT2 C2 VOUT1 = (2 x VIN) - VFD1 - VFD2 VOUT2 = -VIN where VOUT1 = positive doubled output voltage, VIN = input voltage, VFD1 = forward bias voltage across D1, VFD2 = forward bias voltage across D2, and VOUT2 = inverted output voltage. Figure 24. SP828/829 Device Connected in a Doubler/Inverter Combination Circuit SP828DS/03 SP828/829 High Efficiency Voltage Inverters 12 © Copyright 1999 Sipex Corporation +VIN OFF ON IN Shutdown Logic 2 C1+ GND C1 C1- 5 CIN 0.1µF SP828 SP829 4 1 3 OUT VOUT C2 Figure 25. SP828/829 Device with Shutdown Control Combining a Doubler and Inverter Circuit A designer can connect a SP828/829 device in a combination doubler/inverter circuit as seen in Figure 24. The doubler uses capacitors C3 and C4 while the inverter uses C1 and C2. Loading either output decreases both output voltages to GND because both the doubler and the inverter circuits use the charge pump. Designers should not allow the total current output from the doubler and the inverter to exceed 40mA. Connecting in Parallel A designer can parallel a number of SP828/829 devices to reduce the output resistance for specific designs. All devices will need their own flying capacitor, C1, but a single output capacitor will serve all of the devices connected in parallel by increasing the capacitance of C2 by a factor of n where n equals the total number of devices connected. This connection can be found in Figure 26. Implementing Shutdown If shutdown control of the SP828/829 devices is necessary, the circuit found in Figure 25 can be implemented. The 0.1µF capacitor at IN absorbs transient input currents. The output resistance of the devices can be determined by the following equation: Cascading Devices A designer can cascade SP828/829 devices to produce a larger inverted voltage output. Refer to Figure 27 for this circuit connection. With two cascaded devices, the unloaded output voltage is decreased by the output resistance of the first device multiplied by the quiescent current of the second device connected. The total output resistance is greatly increased when more than two devices are cascaded. ROUT = 20 + 2 x RBUFFER , where ROUT is the output resistance and RBUFFER is the output resistance of the buffer driving IN. RBUFFER can be reduced by connecting multiple buffers in parallel at IN. The polarity of the SHUTDOWN signal can be changed by using a noninverting buffer to drive IN. SP828DS/03 Layout and Grounding Designers should make an effort to minimize noise by paying special attention to the circuit layout with the SP828/829 devices. External components should be connected in close proximity to the device and a ground plane should be implemented. This will keep electrical traces short minimizing parasitic inductance and capacitance. SP828/829 High Efficiency Voltage Inverters 13 © Copyright 1999 Sipex Corporation +VIN IN GND C1 C1+ SP828 SP829 5 4 C1 GND 2 C1+ SP828 SP829 5 4 “1” C1- C1 “2” OUT 1 3 IN IN 2 2 C1+ C1- 4 “n” OUT 1 3 GND RL SP828 SP829 5 C1- OUT 1 3 VOUT VOUT = -VIN RTOT = ROUT n where VOUT = output voltage, VIN = input voltage, RTOT = total resistance of the devices connected in parallel, ROUT = the output resistance of a single device, and n = the total number of devices connected in parallel. C2 x n Figure 26. SP828/829 Devices Connected in Parallel to Reduce Total Output Resistance +VIN IN C1+ GND C1 C1- SP828 SP829 5 4 C1+ C1 “1” 5 3 IN IN 2 2 OUT GND C1- 5 2 SP828 SP829 C1+ C1 4 “2” 1 3 OUT GND C1- 3 SP828 SP829 4 “n” 1 5 C2 C2 OUT VOUT C2 VOUT = -n x VIN where VOUT = output voltage, VIN = input voltage, and n = the total number of devices connected. Figure 27. SP828/829 Devices Cascaded to Increase Output Voltage SIPEX PART SIPEX PART NUMBER MANUFACTURER PART NUMBER CAPACITANCE / VOLTAGE MAX ESR @ 100kHz PACKAGE SP828 AVX TPSC106*025 10µF / 25V 0.5Ω SM Case C SP828 SPRAGUE 593D106X035 10µF / 35V 0.3Ω SM Case D SP828 KEMET T494C106*020 10µF / 20V 0.5Ω SM Case C SP828 SANYO-OSCON 94SC106X0016C 10µF / 16V 0.15Ω Radial Case C SP829 KEMET T494B335*020 3.3µF / 20V 1.5Ω SM Case B SP829 SPRAGUE 595D335X0035 3.3µF / 35V 2.0Ω SM Case C SP829 SANYO-OSCON 94SC335X0016A 3.3µF / 16V 0.35Ω Radial Case A Table 1. Suggested Low ESR Tantalum Capacitors SP828DS/03 SP828/829 High Efficiency Voltage Inverters 14 © Copyright 1999 Sipex Corporation PACKAGE: SOT23-5 b CL e E e1 D CL a CL 0.20 DATUM 'A' A A2 C E1 A L 2 A1 A .10 MIN MAX A 0.90 1.45 A1 0.00 0.15 A2 0.90 1.30 b 0.25 0.50 C 0.09 0.20 D 2.80 3.10 E 2.60 3.00 E1 1.50 1.75 L 0.35 0.55 SYMBOL e 0.95ref e1 1.90ref a SP828DS/03 0 O 10 SP828/829 High Efficiency Voltage Inverters 15 O © Copyright 1999 Sipex Corporation ORDERING INFORMATION Model Temperature Range Package Type SP828EK ................................................. -40˚C to +85˚C ............................................... SOT23-5 SP829EK ................................................. -40˚C to +85˚C ............................................... SOT23-5 Please consult the factory for pricing and availability on a Tape-On-Reel option. Corporation SIGNAL PROCESSING EXCELLENCE Sipex Corporation European Sales Offices: Far East: Headquarters and Sales Office 22 Linnell Circle Billerica, MA 01821 TEL: (978) 667-8700 FAX: (978) 670-9001 e-mail: [email protected] ENGLAND: Sipex Corporation 2 Linden House Turk Street Alton Hampshire GU34 IAN England TEL: 44-1420-549527 FAX: 44-1420-542700 e-mail: [email protected] JAPAN: Nippon Sipex Corporation Yahagi No. 2 Building 3-5-3 Uchikanda, Chiyoda-ku Tokyo 101 TEL: 81.3.3256.0577 FAX: 81.3.3256.0621 Sales Office 233 South Hillview Drive Milpitas, CA 95035 TEL: (408) 934-7500 FAX: (408) 935-7600 GERMANY: Sipex GmbH Gautinger Strasse 10 82319 Starnberg TEL: 49.81.51.89810 FAX: 49.81.51.29598 e-mail: [email protected] Sipex Corporation reserves the right to make changes to any products described herein. Sipex does not assume any liability arising out of the application or use of any product or circuit described hereing; neither does it convey any license under its patent rights nor the rights of others. SP828DS/03 SP828/829 High Efficiency Voltage Inverters 16 © Copyright 1999 Sipex Corporation

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