SIRECT PS75N75

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PS75N75
N-Channel Enhancement Mode Field Effect Transistor
- 75Amp 75Volt
□ Application
-Servomotor control
-Power MOSFET gate drivers
-Other switching applications
□ Circuit
□ Feature
-Small surface mounting type
D
-High density cell design for low RDS(ON)
-Suitable for high packing density
-Rugged and reliable
-High saturation current capability
G
-Voltage controlled small signal switch
S
□ Construction
-N-Channel Enhancement
□ Absolute Maximum Ratings
PARAMETER
SYMBOL
PS75N75
UNIT
Drain-Source Voltage
VDS
75
V
Gate-Source Voltage
VGS
± 20
V
Drain Current-Continuos @ TA = 125ºC (Note 1)
ID
75
-Pulsed (Note 2)
IDM
300
Drain-Source Diode Forward Current
IS
60
A
Maximum Power Dissipation
PD
220
W
Operting Junction and Storage Temperature Range
TJ , TSTG
-55 to +175
ºC
Thermal Resistance, Junction-to-Ambient
RθJA
50
ºC/W
Note: 1.Surface Mounted on FR-4 Board, t≦2%
2.Pulse Test : 380μs pulse width, 2% duty cycle
http:// www.sirectsemi.com
A
June 2009 / Rev.6.4
PS75N75
□ Electrical Characteristics
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250μA
75
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS = 20V, VGS = 0V
-
-
20
μA
Gate-Body Leakage
IGSS
VGS = ±16V, VDS = 0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = -250μA
2
-
4
V
Ststic Drain-Source On-Resistance
RDS(ON)
VGS = 10V, ID = 48A
-
9
11
mΩ
Forward Transconductance
gFS
VDS = 25V, ID = 30A
-
50
-
S
-
90
140
-
20
35
-
30
45
VDD = 38V, ID = 48A
VGEN = 10V, RL = 10Ω
RGEN = 4.7Ω
-
12
-
-
79
-
VDD = 38V, ID = 48A
VGEN = 10V, RL = 10Ω
RGEN = 4.7Ω
-
80
-
-
52
-
-
3300
-
-
530
-
-
80
-
-
1.5
-
OFF CHARACTERISTICS
ON CHARACTERISTICS
SWITCHING CHARACTERSTICS
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
TD(on)
Rise Time
tr
Turn-Off Delay Times
TD(off)
Fall Time
tf
VDS = 60V, ID = 48A
VGS = 10V, RGEN = 4.7Ω
nC
nS
nS
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VDS = 25V, VGS = 0V
f = 1.0MHz
pF
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
VSD
VGS = 0V, IS = 60A
http:// www.sirectsemi.com
V
PS75N75
250
250
VGE = 10V
VGS = 10V
9V
200
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
200
8V
7V
150
6V
100
5V
150
100
50
50
4V
0
0
0
10
20
30
0
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
2
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
5000
2.8
ID = 30A
VGS = 10V
RDS(ON), ON-RESISTANCE (mΩ)
f = 1MHz
VGS = 0V
4000
C, CAPACTIANCE (pF)
4
3000
CISS
2000
1000
COSS
2.2
1.6
1.0
0.4
CROSS
0
0
10
20
30
40
50
-50
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
50
100
150
200
Figure 4. On-Resistance Variation with temperature
Figure 3. Capacitance Characteristics
1.3
1.20
VGE = 10V
ID = 250µA
1.2
BVDDSS, NORMALIZED
DRAINS-SOURCE BREAKDOWN
Vth, NORMALIZED GATE-SOURCE
THRESHOLD VOLTAGE
0
TJ, JUNCTION TEMPERATURE (ºC)
1.1
1.0
0.9
0.8
0.7
0.6
ID = 250µA
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75
100
125
-50
TJ, JUNCTION TEMPERATURE (ºC)
Figure 5. Gate Threshold Variation
with Temperature
-25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (ºC)
Figure 6. Breakdown Voltage Variation
with Temperature
http:// www.sirectsemi.com
125
PS75N75
21
20
IS, SOURCE-DRAIN CURRENT (A)
TRANSCONDUCTANCE (S)
VGS = 5V
18
15
12
9
6
3
0
Tj = 25ºC
10
1
0
0
5
10
15
20
25
30
0.4
IDS, DRAIN-SOURCE CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE
VDS = 30V
ID = 75A
8
6
4
2
0
4
6
8
10
12
1.0
1.2
1.4
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
2
0.8
VDS, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transconductance Variation
with Drain Current
0
0.6
14
TOTAL GATE CHARGE (nC)
Figure 9. Gate Charge
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1.6
PS75N75
TO-220AB PACKAGE
L
B
M
C
D
K
A
E
F
O
G
I
J
H
G
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
N
H
D
S
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.579
.606
14.70
15.40
.392
.411
9.95
10.45
.104
.116
2.65
2.95
.248
.272
6.30
6.90
.325
.350
8.25
8.90
.126
.157
3.20
4.00
.492
.551
12.50
14.00
.096
.108
2.45
2.75
.028
.039
0.70
1.00
.010
.022
0.25
0.55
.146
.157
3.70
4.00
.167
.187
4.25
4.75
.045
.057
1.15
1.45
.089
.114
2.25
2.90
.047
.055
1.20
1.40
NOTE
Sirectifier Global Corp., Delaware, U.S.A.
U.S.A.: [email protected]
France: [email protected]
Taiwan: [email protected]
Hong Kong: [email protected]
China: [email protected] …Thailand: [email protected]
Philippines: [email protected] Belize: [email protected]
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