SIRECT SG25S12DT

SG25S12T, SG25S12DT
Discrete IGBTs
Dimensions TO-247AD
E
C
G
C(TAB)
SG25S12T
G=Gate, C=Collector,
E=Emitter,TAB=Collector
SG25S12DT
Symbol
Test Conditions
o
o
Dim.
Millimeter
Min. Max.
Inches
Min.
Max.
A
B
19.81 20.32
20.80 21.46
0.780
0.819
0.800
0.845
C
D
15.75 16.26
3.55 3.65
0.610
0.140
0.640
0.144
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
-
2.13
4.5
0.065
-
0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
N
1.5
2.49
0.087
0.102
Maximum Ratings
Unit
VCES
VCGR
TJ=25 C to 150 C
TJ=25oC to 150oC; RGE=1 M ;
1200
1200
V
VGES
VGEM
Continuous
Transient
±20
±30
V
TC=25oC
TC=90oC
46
25
A
ICM=48
@ 0.8 VCES
A
313
W
IC25
IC90
VGE=15V; TVJ=125oC; RG=25
(RBSOA) Clamped inductive load, L=100uH
PC
TC=25oC
SSOA
-55...+150
150
-55...+150
TJ
TJM
Tstg
Mounting torque (M3)
Test Conditions
IC=1500uA; VGE=0V
VGE(th)
IC=1000uA; VCE=VGE
ICES
Nm/Ib.in.
6
g
V CE(sat)
typ.
max.
1200
V
350
uA
1.4
mA
VCE=0V; VGE=±20V
±100
nA
IC=IC90; VGE=15V
2.35
V
VCE=1200V;
3.0
V
5.0
VGE=0V;
IGES
C
(TJ=25oC, unless otherwise specified)
Characteristic Values
Unit
min.
BVCES
C
1.13/10
Weight
Symbol
o
260
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10s
Md
o
o
TJ=25 C
o
TJ=150 C
4.0
SG25S12T, SG25S12DT
Discrete IGBTs
(TJ=25oC, unless otherwise specified)
Symbol
Test Conditions
Characteristic Values
min.
gts
IC=25A; VCE=20V
Pulse test, t
typ.
max.
20
300us, duty cycle
Unit
S
2%
2150
2600
160
190
Cres
110
130
Qg
225
300
-
-
-
-
Inductive load, TJ=25 C
45
60
ns
IC=25A; VGE=15V/0V; L=180uH
40
52
ns
VCC=800V; RG=Roff=22
Remarks:Switching times may increase
for VCE(Clamp) 0.8VCES' higher TJ or
increased RG
730
950
ns
30
39
ns
1.5
2.0
mJ
Inductive load, TJ=150 C
50
60
ns
IC=25A; VGE=15V/0V; L=180uH
36
43
ns
Eon
VCC=800V; RG=Roff=22
3.8
4.6
mJ
td(off)
Remarks:Switching times may increase
820
990
ns
for VCE(Clamp)
42
50
ns
2.9
3.8
mJ
0.4
K/W
40
K/W
Cies
Coes
Qge
VCE=25V; VGE=0V; f=1MHz
IC=25A; VGE=15V; VCC=960V
Qgc
td(on)
tri
td(off)
tfi
Eoff
td(on)
tri
tfi
Eoff
RthJC
o
o
0.8VCES' higher TJ or
increased RG
IGBT
RthCK
Symbol
Test Conditions
Characteristic Values
min.
typ.
o
IF=30A; TVJ=150 C
TVJ=25 C
trr
RthJC
Unit
max.
2.2
o
IRM
nC
(TJ=25oC, unless otherwise specified)
Reverse Diode (FRED)
VF
pF
V
2.55
VR=540V; IF=30A; -diF/dt=240A/us
L 0.05uH; TVJ=100oC
16
18
A
IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC
40
60
ns
0.9
K/W