Product Description Sirenza Microdevices’ XD010-04S-D4F 12W power module is a robust broadband 2-stage Class A/AB amplifier, suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, notune, solution for high power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. Internal bias current compensation ensures stable performance over a wide temperature range. It is internally matched to 50 ohms. XD010-04S-D4F XD010-04S-D4FY Pb RoHS Compliant & Green Package 350-600 MHz Class AB 12W Power Amplifier Module Functional Block Diagram Stage 1 Bias Network 1 Temperature Compensation 2 RF in Product Features Stage 2 VD1 4 3 VD2 RF out • • • • • • • • • 50 W RF impedance 12W Output P1dB Single Supply Operation : Nominally 28V High Gain: 32 dB at 450 MHz High Efficiency: 30% at 450 MHz Robust 8000V ESD (HBM), Class 3B XeMOS II LDMOS FETS Temperature Compensation Applications • • • • Case Flange = Ground Available in RoHS compliant packaging DTV Public Service Wireless Infrastructure Military Communications Key Specifications Symbol Frequency Parameter Unit Min. Typ. Max. Frequency of Operation MHz 350 - 600 P1dB Output Power at 1dB Compression, 450MHz W - 12 - Gain Gain at 10W Output Power, 450MHz dB 30 32 2.0 Gain Flatness Peak to Peak Gain Variation, 350 - 600MHz dB - 1.0 Input Return Loss 1W Output Power, 350 - 600MHz dB 10 15 - Efficiency Drain Efficiency at 10W CW, 350-600MHz % 26 30 - Linearity 3rd Order IMD at 10W PEP (Two Tone), 450MHz & 451MHz dBc - -32 -28 Signal Delay from Pin 1 to Pin 4 nS - 2.5 - Deg - 0.5 - 350 - 600 IRL Delay Phase Linearity Frequency Deviation from Linear Phase (Peak to Peak) Frequency of Operation MHz RTH, j-l Thermal Resistance Stage 1 (Junction-to-Case) ºC/W 11 RTH, j-2 Thermal Resistance Stage 2 (Junction-to-Case) ºC/W 4 Test Conditions Zin = Zout = 50Ω, VDD = 28.0V, IDQ1 = 230 mA, IDQ2 =150 mA, TFlange = 25ºC 1625-1675The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any thrid party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-104259 Rev E XD010-04S-D4F 350-600 MHz 12W Power Amp Module Quality Specifications Parameter ESD Rating Human Body Model, JEDEC Document - JESD22-A114-B 85o MTTF o C Leadframe, 200 C Channel Unit Typical V 8000 Hours 1.2 X 106 Pin Description Pin # Function Description 1 RF Input Module RF input. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be taken to protect against video transients that may damage the active devices. 2 VD1 This is the drain voltage for the first stage. Nominally +28Vdc 3 VD2 This is the drain voltage for the 2nd stage of the amplifier module. The 2nd stage gate bias is temperature compensated to maintain constant quiscent drain current over the operating temperature range. See Note 1. 4 RF Output Module RF output. This pin is internally connected to DC ground. Do not apply DC voltages to the RF leads. Care must be taken to protect against video transients that may damage the active devices. Flange Gnd Exposed area on the bottom side of the package needs to be mechanically attached to the ground plane of the board for optimum thermal and RF performance. See mounting instructions in application note AN-060 on Sirenza’s web site. Simplified Device Schematic 2 VD1 3 VD2 Temperature Bias Network Compensation RFout Q2 Q1 4 RFin 1 Case Flange = Ground Absolute Maximum Ratings Value Unit 1st Stage Bias Voltage (VD1 ) Parameters 35 V 2nd Stage Bias Voltage (VD2) 35 V RF Input Power +20 dBm Load Impedance for Continuous Operation Without Damage 5:1 VSWR Output Device Channel Temperature +200 ºC Operating Temperature Range -20 to +90 ºC Storage Temperature Range -40 to +100 ºC Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation see typical setup values specified in the table on page one. Caution: ESD Sensitive Appropriate precaution in handling, packaging and testing devices must be observed. 303 S. Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 2 Note 1: The internally generated gate voltage is thermally compensated to maintain constant quiescent current over the temperature range listed in the data sheet. No compensation is provided for gain changes with temperature. This can only be accomplished with AGC external to the module. Note 2: Internal RF decoupling is included on all bias leads. No additional bypass elements are required, however some applications may require energy storage on the drain leads to accommodate time-varying waveforms. Note 3: This module was designed to have its leads hand soldered to an adjacent PCB. The maximum soldering iron tip temperature should not exceed 700° F, and the soldering iron tip should not be in direct contact with the lead for longer than 10 seconds. Refer to app note AN060 (www.sirenza.com) for further installation instructions. http://www.sirenza.com EDS-104259 Rev E XD010-04S-D4F 350-600 MHz 12W Power Amp Module Typical Performance Curves 2 Tone Gain, Efficiency, Linearity vs Pout Vdd=28V, Freq=450 MHz, Delta F=1 MHz 2 Tone Gain, Efficiency, Linearity and IRL vs Frequency Vdd=28V, Pout=10W PEP, Delta F=1 MHz 70 0 -25 40 -30 35 -35 30 -40 25 -45 20 -50 15 -55 50 -20 40 -30 30 -40 20 -50 10 10 -60 5 0 -70 700 0 250 300 350 400 450 500 550 600 650 Gain IM3 IM7 -60 Efficiency IM5 -65 -70 0 5 10 15 20 Pout (W PEP) Frequency (MHz) CW Gain, Efficiency, IRL vs Frequency Vdd=28V, Pout=10W 40 IMD (dBc) -10 Gain (dB), Efficiency (%) Gain (dB), Efficiency (%) Efficiency IM5 IRL IMD(dBc), IRL (dB) Gain IM3 IM7 60 45 -10 CW Gain, Efficiency vs Pout Vdd=28V, Freq=450 MHz 35 60 Gain Efficiency -15 32.5 -17.5 30 -20 27.5 25 34.75 34.5 -22.5 -25 250 300 350 400 450 500 550 600 650 700 40 Gain Efficiency 34.25 30 34 20 33.75 10 33.5 0 0 5 10 15 20 Pout (W) Frequency (MHz) 303 S. Technology Court Broomfield, CO 80021 50 Efficiency (%) 35 -12.5 Gain (dB) IRL Input Return Loss (dB) Gain (dB), Efficiency (%) 37.5 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-104259 Rev E XD010-04S-D4F 350-600 MHz 12W Power Amp Module Test Board Schematic with module connections shown Test Board Bill of Materials Component Description Manufacturer PCB Rogers 4350, er=3.5 Thickness=30mils Rogers J1, J2 SMA, RF, Panel Mount Tab W / Flange Johnson J3 MTA Post Header, 6 Pin, Rectangle, Polarized, Surface Mount AMP C1, C10 Cap, 10mF, 35V, 10%, Tant, Elect, D Kemet C2, C20 Cap, 0.1mF, 100V, 10%, 1206 Johanson C3, C30 Cap, 1000pF, 100V, 10%, 1206 Johanson C25, C26 Cap, 68pF, 250V, 5%, 0603 ATC C21, C22 Cap, 0.1mF, 100V, 10%, 0805 Panasonic C23, C24 Cap, 1000pF, 100V, 10%, 0603 AVX Mounting Screws 4-40 X 0.250” Various Test Board Layout To receive Gerber files, DXF drawings, a detailed BOM, and assembly recommendations for the test board with fixture, contact applications support at [email protected]. Data sheet for evaluation circuit (XD010-EVAL) available from Sirenza website. 303 S. Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-104259 Rev E XD010-04S-D4F 350-600 MHz 12W Power Amp Module Package Outline Drawing Recommended PCB Cutout and Landing Pads for the D4F Package Note 3: Dimensions are in inches Refer to Application note AN-060 “Installation Instructions for XD Module Series” for additional mounting info. App note availbale at at www.sirenza.com 303 S. Technology Court Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-104259 Rev E