SSDI 2N5015_1

2N5015
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
0.5 AMP, 1000 Volts
NPN Transistor
DESIGNER’S DATA SHEET
Part Number / Ordering Information
2N50
15
│
│
│
│
│
│
│
│
└
__
│
│
│
│
│
└
1/
__
└
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Package
/39 = TO-39
/5 = TO-5
1000V
Family / Voltage
FEATURES:





BVCER 1000 volts
Low Saturation Voltage
Low Leakage at High Temperature
High Gain, Low Saturation
200° C Operating, Gold Eutectic Die Attach
 TX, TXV, and S-Level Screening Available
Maximum Ratings
Symbol
Value
Units
Collector – Emitter Voltage (RBE= 1 kΩ)
VCER
1000
V
Collector – Base Voltage
VCBO
1000
V
Emitter – Base Voltage
VEBO
5
V
BVCEO
450
V
Peak Collector Current
IC
0.5
A
Peak Base Current
IB
250
mA
Total Device Dissipation @ TC = 100º C
Derate above 100º C
PD
2.0
20
W
mW/ºC
TOP, TSTG
-65 to +200
ºC
RθJC
50 (typ 22)
ºC/W
Collector – Emitter Breakdown Voltage
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Notes:
TO-39
TO-5
1/ For ordering information, price, operating curves, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C.
4/ Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0043E
DOC
2N5015
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected]di-power.com * www.ssdi-power.com
Electrical Characteristic 3/
Symbol
Min
Typ
Max
Units
Collector – Emitter Breakdown Voltage
(IC = 200 µADC, RBE = 1 KΩ)
BVCER
1000
1300
––
V
Collector–Base Breakdown Voltage
(IC = 200 µADC)
BVCBO
1000
-
––
V
Emitter–Base Breakdown Voltage
(IE = 50 µADC)
BVEBO
5
7
––
V
Collector Cutoff Current (VCB = 760 V)
(VCB = 760 V, TC = 100°C)
ICBO
––
––
0.08
6
12
100
µAdc
Emitter Cutoff Current (VEB= 4V)
IEBO
—
0.003
20
µA
hFE
10
30
70
80
180
––
VCE(Sat)
––
0.07
1.8
Vdc
VBE(Sat)
––
0.7
1.0
Vdc
fT
20
25
––
MHz
Cob
––
12.5
30
pF
td
tr
ts
tf
––
––
––
––
50
100
1500
450
200
1200
3000
800
nsec
DC Current Gain 4/
(IC = 5 mADC, VCE = 10 VDC)
(IC = 20 mADC, VCE = 10 VDC)
Collector – Emitter Saturation Voltage
(IC = 20 mADC, IB = 5 mADC)
4/
Base – Emitter Saturation Voltage 4/
(IC = 20 mADC, IB = 5 mADC)
Current Gain Bandwidth Product
(IC = 20 mADC, VCE = 10 VDC, f = 20 MHz)
Output Capacitance
(VCB = 10 VDC, IE = 0 ADC, f = 1.0 MHz)
Delay Time
Rise Time
Storage Time
Fall Time
VCC= 125 VDC,
IC= 100 mADC,
IB1= 20 mADC
IB2= 20 mADC
pw= 2 us
Case Outline: TO-39
Case Outline: TO-5
PIN 1: EMITTER
PIN 2: BASE
PIN 3: COLLECTOR
PIN 1: EMITTER
PIN 2: BASE
PIN 3: COLLECTOR
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0043E
DOC