SFF116N10M SFF116N10Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information SFF116N10 ___ ___ │ │ │ │ │ │ │ │ │ └ │ │ │ │ │ └ 1/ ____ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Lead Option 3/ __ = Straight Leads DB = Down Bend UB = Up Bend Package 3/ 4/ M = TO-254 Z = TO-254Z 116 AMP , 100 Volts, 15 mΩ Avalanche Rated N-channel MOSFET Features: • • • • • • • • Rugged poly-Si gate Lowest ON-resistance in the industry Avalanche rated Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit Maximum Ratings Symbol Value Units VDSS 100 V continuous transient VGS ±20 ±30 V @ TC = 25ºC ID1 55 A @ TC = 25ºC @ TC = 175ºC ID2 ID3 116 80 A Max. Avalanche current @ L= 0.1 mH IAR 60 A Single and Repetitive Avalanche Energy @ L= 0.1 mH EAS EAR 2500 80 mJ Total Power Dissipation @ TC = 25ºC PD 150 W TOP & TSTG -55 to +175 ºC RθJC 1.0 (typ.0.75) ºC /W Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current (package limited) Max. Instantaneous Drain Current (Tj limited) Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ For package outlines / lead bending options / pinout configurations - contact factory. 4/ Maximum current limited by package configuration 5/ Unless otherwise specified, all electrical characteristics o @25 C. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. TO-254 DATA SHEET #: FT0037B TO-254Z DOC SFF116N10M SFF116N10Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics 5/ Drain to Source Breakdown Voltage VGS = 0V, ID = 250μA Symbol Min Typ Max Units BVDSS 100 110 –– V –– –– –– 3.0 2.0 –– 10 16 20 4.5 3.5 5.0 15 25 –– 5.0 –– 6 IGSS –– –– 10 30 ±100 –– nA IDSS –– –– –– 0.01 2.5 25 25 250 –– μA μA μA o Drain to Source On State Resistance Gate Threshold Voltage VGS = 10V, ID = 50A, Tj= 25 C o VGS = 10V, ID = 50A, Tj=125 C o VGS = 10V, ID = 50A, Tj= 150 C VDS = VGS, ID = 1.0mA, Tj= 25oC o VDS = VGS, ID = 1.0mA, Tj= 125 C VDS = VGS, ID = 1.0mA, Tj= -55oC RDS(on) VGS(th) o VGS = ±20V, Tj= 25 C o VGS = ±20V, Tj= 125 C Gate to Source Leakage o Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge VDS = 100V, VGS = 0V, Tj = 25 C o VDS = 100V, VGS = 0V, Tj = 125 C VDS = 100V, VGS = 0V, Tj = 175oC mΩ V VDS = 15V, ID = 35A, Tj = 25oC VGS = 12V VDS = 35V ID = 50A gfs 10 60 –– Mho Qg Qgs Qgd –– –– –– 125 35 65 250 75 120 nC VGS = 11V VDS = 50V ID = 35A RG = 2.35Ω, pw= 3us td(on) tr td(off) tf –– –– –– –– 39 67 80 67 50 80 100 80 nsec Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage IF = 35A, VGS = 0V VSD –– 0.82 1.2 V Diode Reverse Recovery Time Reverse Recovery Charge IF = 50A, di/dt = 100A/usec trr Qrr 240 0.85 300 –– nsec μC Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1 MHz Ciss Coss Crss –– –– –– –– –– 4800 2050 600 –– –– –– pF Available Part Numbers: PIN ASSIGNMENT (Standard) Package Drain Source Gate TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) Pin 1 Pin 2 Pin 3 TO254Z (Z) Consult Factory TO254 (M) PIN 3 PIN 2 PIN 3 PIN 1 PIN 2 PIN 1 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0037B DOC