SFT5013-4 & SFT5014-4 SFT5013/5 & SFT5014/5 SFT5013/39 & SFT5014/39 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 0.5 AMP, 800 – 900 Volts NPN Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT50 __ │ │ │ │ │ │ │ __ │ │ │ │ │ └ __ └ └ Family / Voltage 13 = 800V Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Package /39: TO-39 /5: TO-5 -4: LCC4 14 = 900V FEATURES: BVCER to 900 volts Low Saturation Voltage Low Leakage at High Temperature High Gain, Low Saturation 200° C Operating, Gold Eutectic Die Attach 2N5010 thru 2N5012 Also Available, Contact Factory TX, TXV, and S-Level Screening Available Maximum Ratings Symbol Value Units 5013 5014 VCER 800 900 V 5013 5014 VCBO 800 900 V VEBO 5 V BVCEO 300 400 V Peak Collector Current IC 0.5 A Peak Base Current IB 250 mA PD 1.0 2.0 20 2.0 20 W W mW/ºC W mW/ºC TOP, TSTG -65 to +200 ºC RθJC / RθJA RθJC 175 / 440 50 (typ 30) ºC/W Collector – Emitter Voltage (RBE= 1 kΩ) Collector – Base Voltage Emitter – Base Voltage 5013 5014 Collector – Emitter Breakdown Voltage Total Device Dissipation @ TC= 25º C @ TA= 25º C Derate above TC= 25º C @ TC= 100º C Derate above TC= 100º C -4 /39 & /5 Operating and Storage Temperature -4 /39 & /5 Thermal Resistance, Junction to Case Notes: 4 PIN CLCC (LCC4) TO-39 TO-5 1/ For ordering information, price, operating curves, and availability - contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, maximum ratings/electrical characteristics at 25°C. 4/ Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2% NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: XN0031H DOC SFT5013-4 & SFT5014-4 SFT5013/5 & SFT5014/5 SFT5013/39 & SFT5014/39 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristic 3/ Symbol Min Typ Max Units Collector – Emitter Breakdown Voltage (IC = 200 µADC, RBE = 1 KΩ) 5013 5014 BVCER 800 900 –– V Collector–Base Breakdown Voltage (IC = 200 µADC) 5013 5014 BVCBO 800 900 –– V BVEBO 5 –– V Emitter–Base Breakdown Voltage (IE = 50 µADC) Collector Cutoff Current (VCB = 650 V) (VCB = 700 V) (VCB = 650 V, TC = 100°C) (VCB = 700 V, TC = 100°C) 5013 5014 5013 5014 11.5 –– –– –– –– ICBO 12 12 100 100 µAdc Emitter Cutoff Current (VEB= 4V) IEBO — 0.001 20 µA DC Current Gain 4/ (IC = 5 mADC, VCE = 10 VDC) (IC = 20 mADC, VCE = 10 VDC) hFE 10 30 60 70 180 –– Collector – Emitter Saturation Voltage 4/ (IC = 20 mADC, IB = 5 mADC) VCE(Sat) –– 0.07 1.6 Vdc Base – Emitter Saturation Voltage 4/ (IC = 20 mADC, IB = 5 mADC) VBE(Sat) –– 0.73 1.0 Vdc fT 20 30 –– MHz Cob –– 6.6 30 pF td tr ts tf –– –– –– –– 50 200 2200 400 200 1200 3000 800 nsec Current Gain Bandwidth Product (IC = 20 mADC, VCE = 10 VDC, f = 20 MHz) Output Capacitance (VCB = 10 VDC, IE = 0 ADC, f = 1.0 MHz) VCC= 125 VDC, IC= 100 mADC, IB1= 20 mADC, IB2= 20 mADC Delay Time Rise Time Storage Time Fall Time Case Outline: TO-5 PIN 1: EMITTER Case Outline: TO-39 PIN 2: BASE PIN 3: COLLECTOR PIN 1: EMITTER PIN 2: BASE PIN 3: COLLECTOR Case Outline: 4 PIN CLCC (LCC4) PIN 1: COLLECTOR PIN 2: EMITTER .225 .215 .160 .145 PIN 3: BASE PIN 4: N/C .076 .060 .048 .032 3 4 2 1 4x .025 REF .050 REF PIN 1 INDENTIFIER .048 .032 .088 .072 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: XN0031H DOC