4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet SST1LP124.9-5.8 GHz High-Linearity Power Amplifier FEATURES: • High gain • High linear output power: – Meets 802.11a OFDM Spectrum Mask requirement up to 24 dBm over the entire band – Added EVM <4% up to 21 dBm for 54 Mbps 802.11a signal • High power-added efficiency/Low operating current for 6 Mbps 802.11a applications – ~17% @ POUT = 23 dBm for 6 Mbps • Built-in Ultra-low IREF power-up/down control – IREF <3 mA • Low idle current – ~150 mA ICQ • High speed power up/down – Turn on/off time (10%~90%) <100 ns – Typical power-up/down delay with driver delay included <200 ns • • • • • • High temperature stability Low shut-down current (~2 µA) On-chip power detection 20 dB dynamic range on-chip power detection Simple input/output matching Packages available – 16-contact WQFN (3mm x 3mm) – Non-Pb (lead-free) packages available APPLICATIONS: • • • • WLAN (IEEE 802.11a) Japan WLAN HyperLAN2 Multimedia PRODUCT DESCRIPTION The SST11LP12 is a high-power, high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. The SST11LP12 can be easily configured for high-power, high-efficiency applications with superb power-added efficiency while operating over the entire 802.11a frequency band for U.S., European, and Japanese markets (4.9-5.8 GHz). The SST11LP12 has excellent linearity, typically <4% added EVM at 21 dBm output power which is essential for 54 Mbps 802.11a operation while meeting 802.11a spectrum mask at 24 dBm. SST11LP12 also has wide-range (>20 dB), temperature-stable (~1 dB over 85°C), singleended/differential power detectors which lower users’ cost on power control. ©2010 Silicon Storage Technology, Inc. S71278-04-000 12/10 1 The power amplifier IC also features easy board-level usage along with high-speed power-up/down control. Ultralow reference current (total IREF <3 mA) makes the SST11LP12 controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST11LP12 ideal for the final stage power amplification in battery-powered 802.11a WLAN transmitter and access point applications. The SST11LP12 is offered in 16-contact WQFN package. See Figure 2 for pin assignments and Table 1 for pin descriptions. The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet VCC1 VCC2 VCC3 NC FUNCTIONAL BLOCKS 16 15 14 13 NC 1 12 NC RFIN 2 11 RFOUT RFIN 3 10 RFOUT VCCb 4 Bias Circuit 5 6 7 8 NC VREF VREF Det_ref 9 Det 1278 B1.1 FIGURE 1: Functional Block Diagram ©2010 Silicon Storage Technology, Inc. S71278-04-000 2 12/10 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet NC VCC1 VCC2 VCC3 NC PIN ASSIGNMENTS 16 15 14 13 12 NC 1 Top View VCCb 4 11 RFOUT 10 RFOUT RF and DC GND 0 9 Det 5 6 7 8 Det_ref 3 VREF RFIN (contacts facing down) VREF 2 NC RFIN 1278 16-wqfn P1.0 FIGURE 2: Pin Assignments for 16-contact WQFN PIN DESCRIPTIONS TABLE 1: Pin Description Symbol Pin No. Pin Name Type1 Function GND 0 Ground The center pad should be connected to RF ground with several low inductance, low resistance vias. NC 1 No Connection Unconnected pin RFIN 2 I RF input, DC decoupled RFIN 3 I RF input, DC decoupled VCCb 4 Power Supply NC 5 No Connection VREF 6 PWR Current Control VREF 7 PWR Current Control PWR Supply voltage for bias circuit Unconnected pin Det_ref 8 O On-chip power detector reference Det 9 O On-chip power detector RFOUT 10 O RF output RFOUT 11 O RF output NC 12 No Connection Unconnected pin NC 13 No Connection Unconnected pin VCC3 14 Power Supply PWR Power supply, 3rd stage VCC2 15 Power Supply PWR Power supply, 2nd stage VCC1 16 Power Supply PWR Power supply, 1st stage T1.1 1278 1. I=Input, O=Output ©2010 Silicon Storage Technology, Inc. S71278-04-000 3 12/10 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet ELECTRICAL SPECIFICATIONS The AC and DC specifications for the power amplifier interface signals. Refer to Table 2 for the DC voltage and current specifications. Refer to Figures 3 through 8 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Supply Voltage at pins 4, 14, 15, 16 (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.8V DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +85ºC Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40ºC to +120ºC Maximum Junction Temperature (TJ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150ºC Surface Mount Solder Reflow Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds OPERATING RANGE Range Ambient Temp VCC Industrial -40°C to +85°C 3.3V TABLE 2: DC Electrical Characteristics Symbol Parameter VCC Supply Voltage at pins 4, 14, 15, 16 Min. Typ Max. Unit 2.7 3.3 3.6 V 400 mA ICC Supply Current @ POUT = 23 dBm at VCC = 3.3V ICQ VCC quiescent current 150 IOFF Shut down current <1.0 VREG Reference Voltage for recommended application 2.85 Test Conditions mA µA 3.0 V T2.0 1278 ©2010 Silicon Storage Technology, Inc. S71278-04-000 4 12/10 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet TABLE 3: AC Electrical Characteristics for Configuration1 Symbol Parameter Min FL-U Frequency range 4.9 Linearity G Typ Max 5.8 Unit GHz Output power with <4% EVM at 54 Mbps OFDM signal when operating at 3.3V VCC 21 dBm Output power level with 802.11a mask compliance across 4.9-5.8 GHz 23 dBm Gain over band (4.9-5.1 MHz) 33 dB Gain over band (5.3-5.5 MHz) 31 dB Gain over band (5.7-5.8 MHz) 27 Det Power detector output voltage range 0.5 Det_ref Power detector output reference 0.5 2f, 3f, 4f, 5f Harmonics at 22 dBm, without trapping capacitors dB 2.0 V 0.6 V -50 dBc T3.1 1278 1. Performance is only valid using the recommended schematic. VCC = 3.3V, VREG = 2.85, Temperature = 25ºC ©2010 Silicon Storage Technology, Inc. S71278-04-000 5 12/10 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS Test Conditions: VCC = 3.3V, TA = 25°C, VREG1,2 = 2.85V unless otherwise noted S12 versus Frequency 0 0 -5 -10 -10 -20 -15 -30 S12 (dB) S11 (dB) S11 versus Frequency -20 -25 -40 -50 -30 -60 -35 -70 -40 -80 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 Frequency (GHz) Frequency (GHz) S22 versus Frequency 40 0 30 -5 20 -10 10 -15 S22 (dB) S21 (dB) S21 versus Frequency 0 -10 -20 -25 -20 -30 -30 -35 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 -40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 Frequency (GHz) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 Frequency (GHz) 1278 S-Parms.0.1 FIGURE 3: S-Parameters ©2010 Silicon Storage Technology, Inc. S71278-04-000 6 12/10 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS Test Conditions: VCC = 3.3V, TA = 25°C, VREG = 2.85V unless otherwise specified EVM for 54 Mbps operation EVM versus Output Power 10 EVM (%) 9 8 4.920 GHz 7 5.180 GHz 6 5.500 GHz 5.805 GHz 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) 1278 F4.1 FIGURE 4: EVM versus Output Power Supply Current (mA) Supply Current versus Output Power 410 400 390 380 370 360 350 340 330 320 310 300 290 280 270 260 250 240 230 220 210 200 190 180 170 160 150 140 130 120 4.920 GHz 5.180 GHz 5.500 GHz 5.805 GHz 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) 1278 F5.2 FIGURE 5: Power Supply Current versus Output Power ©2010 Silicon Storage Technology, Inc. S71278-04-000 7 12/10 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet Detector Voltage versus Output Power 1.70 1.60 Detector Voltage (V) 1.50 1.40 1.30 1.20 1.10 1.00 0.90 4.920 GHz 0.80 5.500 GHz 0.70 5.500 GHz 0.60 5.805 GHz 0.50 0.40 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) 1278 F6.2 FIGURE 6: Detector Voltage versus Output Power Power Gain versus Output Power 36 34 Power Gain (dB) 32 30 28 26 24 4.920 GHz 22 5.180 GHz 20 5.500 GHz 5.805 GHz 18 16 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) 1278 F7.2 FIGURE 7: Power Gain versus Output Power ©2010 Silicon Storage Technology, Inc. S71278-04-000 8 12/10 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet PAE (%) PAE versus Output Power 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 4.920 GHz 5.180 GHz 5.500 GHz 5.805 GHz 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Output Power (dBm) 23 24 1278 F9.0 FIGURE 8: PAE versus Output Power TABLE 4: 802.11a 6Mbps OFDM Mask Compliance Power Frequency (GHz) 802.11a 6Mbps OFDM Mask Compliance Power (dBm) 4.920 24 5.180 23.8 5.500 23.5 5.805 23 T4.0 1278 ©2010 Silicon Storage Technology, Inc. S71278-04-000 9 12/10 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet VCC 25Ω 10 µF 3.3 pF 0-20 mil 0.1 µF 0.1 µF 0.1 µF 16 50Ω 15 14 13 1 12 2 11 0.1 pF ** 50Ω 80 mil/60 mil RFin 10 3 0.3 pF* RFOUT 0.4 pF ** Bias Circuit 9 4 0.1 µF Test Conditions 5 6 7 10 pF 8 VREG = 2.85V VCC=3.3V 0Ω * Distance from the edge of the package to the edge of the 0.3 pF capacitor = 40 mil **Distance from the edge of the output patch to the edge of the 0.1 pF /0.4 pF capacitors = 40 mil 10 pF 100 pF Det_ref Det 1278 Schematic.0.5 VREF FIGURE 9: Recommended Schematic for High-Power 802.11a Application ©2010 Silicon Storage Technology, Inc. S71278-04-000 10 12/10 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet PRODUCT ORDERING INFORMATION SST11LP SSTXXLP 12 XX - QC XX F X Environmental Attribute F1 = non-Pb / non-Sn contact (lead) finish: Nickel plating with Gold top (outer) layer Package Modifier C = 16 contact Package Type Q = WQFN Product Family Identifier Product Type P = Power Amplifier Voltage L = 3.0-3.6V Frequency of Operation 1 = 4.9-5.8 GHz Product Line 1 = SST Communications 1. Environmental suffix “F” denotes non-Pb/non-Sn solder. SST non-Pb/non-Sn solder devices are “RoHS Compliant”. Valid combinations for SST11LP12 SST11LP12-QCF SST11LP12 Evaluation Kits SST11LP12-QCF-K Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. ©2010 Silicon Storage Technology, Inc. S71278-04-000 11 12/10 4.9-5.8 GHz High-Linearity Power Amplifier SST11LP12 Data Sheet PACKAGING DIAGRAMS TOP VIEW SIDE VIEW BOTTOM VIEW See notes 2 and 3 0.2 Pin 1 Pin 1 1.7 3.00 0.075 1.7 0.5 BSC 0.075 3.00 0.075 0.45 0.35 0.05 Max 0.80 0.70 0.30 0.18 1mm 16-wqfn-3x3-QC-0.3 Note: 1. Complies with JEDEC JEP95 MO-220J, variant WEED-4 except external paddle nominal dimensions. 2. From the bottom view, the pin 1 indicator ma y be either a 45-degree chamfer or a half-circle notch. 3. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. Untoleranced dimensions are nominal target dimensions. 5. All linear dimensions are in millimeters (max/min). FIGURE 10: 16-contact Very-thin Quad Flat No-lead (WQFN) SST Package Code: QC TABLE 5: Revision History Revision 00 01 Description • • • 03 • • • • • • 04 • • 02 Date S71278: SST conversion of data sheet GP1112 Corrected the spectrum mask value in “Product Description” on page 1 to read 802.11a Corrected the solder reflow temperature under “Absolute Maximum Stress Ratings” on page 4 Updated sales and marketing contact information Changed VQFN to WQFN Updated Product Ordering information Updated Table 3 on page 5. Updated document status from Preliminary Specifications to Data Sheet Revised gain values in “Features:” and “Product Description” on page 1 and in Table 3 on page 5 Updated “” on page 12 Updated Features, Table 2, Table 3, Table 4, and Figures 4-9 to indicate improved RF performance. Jan 2005 Jan 2006 Mar 2008 Feb 2009 Dec 2010 Silicon Storage Technology, Inc. www.SuperFlash.com or www.sst.com ©2010 Silicon Storage Technology, Inc. S71278-04-000 12 12/10