TAK CHEONG ® N-Channel Power MOSFET 10A, 600V, 0.75Ω GENERAL DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance. This device is well suited for high efficiency switched mode power suppliers, active power factor correction, electronic lamp ballasts based half bridge topology. 1 1 = Gate 2 = Drain 3 = Source 2 TO-220AB 3 DEVICE MARKING DIAGRAM L xxyy TFP XXXX L = Tak Cheong Logo xxyy = Monthly Date Code TFPXXXX = Device Type D FEATURES ● Robust high voltage termination ● Avalanche energy specified ● Diode is characterized for use in bridge circuits ● Source to Drain diode recovery time comparable to a discrete fast recovery diode. G S ABSOLUTE MAXIMUM RATINGS (T C =25°C, unless otherwise noted ) Symbol Parameter Value Units VDSS Drain- Source Voltage 600 V VGSS Gate-Source Voltage ±20 V Drain Current 10 A Continuous Drain Current Tc=100℃ 6.4 A Drain Current Pulsed 40 A 125 W 1 W/℃ ID IDM PD Power Dissipation (Note 2) Derating Factor above 25℃ EAS Single Pulsed Avalanche Energy (Note 1) 300 mJ EAR Repetitive Avalanche Energy (Note 2) 30 mJ 150 ℃ - 55 to +150 ℃ Value Unit TJ Tstg Operating Junction Temperature Storage Temperature Range Notes: 1. L=10mH, I AS=8.0A, VDD=50V, RG=50Ω, Starting T J=25℃ 2. Repetitive Rating: Pulse width limited by maximum junction temperature. THERMAL CHARACTERISTICS Symbol Parameter RθJC Thermal Resistance, Junction-to-Case 1.0 ℃/W RθJA Thermal Resistance, Junction-to-Ambient 62 ℃/W Number: DB-220 May 2010, Revision A Page 1 TFP10N60 P rel i mi nary D atash e et TAK CHEONG ® P rel i mi nary D atash e et ELECTRICAL CHARACTERISTICS Off Characteristics (TA = 25°C unless otherwise noted) Symbol BVDSS Parameter Test Conditions Min. Typ. Max. Unit Drain-Sounce Breakdown Voltage VGS = 0V, ID = 250uA 600 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V -- -- 25 uA IGSSF Gate-Body Leakage Current, Forward VGS = 20V, VDS = 0V -- -- 10 uA IGSSR Gate-Body Leakage Current, Reverse VGS = -20V, VDS = 0V -- -- -10 uA Min. Typ. Max. Unit 2.0 -- 4.0 V -- 0.63 0.75 Ω Min. Typ. Max. Unit -- 1430 -- pF -- 160 --- pF -- 28 -- pF Min. Typ. Max. Unit -- 20 -- nS -- 20 -- nS -- 55 -- nS On Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Test Conditions VGS (th) Gate Threshold Voltage VDS = VGS , ID = 250uA RDS(ON) On-Resistance VGS = 10V, ID = 5A Dynamic Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Test Conditions VDS = 25V, VGS = 0V, f = 1.0MHz Switching Characteristics Symbol td(on) Parameter Test Conditions Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time VDD = 300V, ID = 10A, VGS = 10V, R G = 4.7Ω (Note 3 & 4) tr Turn-Off Fall Time -- 30 -- nS Qg Total Gate Charge VDS = 480V, ID = 10A, -- 60 70 nC Qgs Gate-Source Charge VGS = 10V -- 12 -- nC Qgd Gate-Drain Charge (Note 3 & 4) -- 28 -- nC Min. Typ, Max. Unit Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Test Conditions IS Maximum Continuous Drain-Source Diode Forward Current -- -- 10 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 40 A VSD Drain-Source Diode Forward Voltage -- -- 1.5 V Trr Reverse Recovery Time -- 600 -- nS Qrr Reverse Recovery Charge -- 4.3 -- nC IRRM Reverse Recovery Current -- 13 -- A VGS = 0V, IS = 10A VGS = 0V, IS = 10A, dIF / dt = 100A/uS (Note 3) Notes: 3. Pulse Test: Pulse width 380us, Duty cycle ≤ 2%. 4. Basically not affected by working temperature. Number: DB-220 May 2010, Revision A Page 2 TAK CHEONG ® P rel i mi nary D atash e et TYPICAL CHARACTERISTICS Number: DB-220 May 2010, Revision A Page 3 TAK CHEONG ® P rel i mi nary D atash e et Number: DB-220 May 2010, Revision A Page 4 TAK CHEONG ® P rel i mi nary D atash e et Number: DB-220 May 2010, Revision A Page 5 TAK CHEONG ® P rel i mi nary D atash e et TEST CIRCUIT AND WAVEFORM Number: DB-220 May 2010, Revision A Page 6 TAK CHEONG ® P rel i mi nary D atash e et TO220AB PACKAGE OUTLINE DIM MILLIMETERS INCHES MIN MAX MIN MAX A 3.60 4.80 0.142 0.189 A1 1.20 1.40 0.047 0.055 A2 2.03 2.90 0.080 0.114 b 0.40 1.00 0.016 0.039 b2 1.20 1.78 0.047 0.070 c 0.36 0.60 0.014 0.024 D 14.22 16.50 0.560 0.650 e 2.34 2.74 0.092 0.108 E 9.70 10.60 0.382 0.417 H1 5.84 6.85 0.230 0.270 L 12.70 14.70 0.500 0.579 L1 2.70 3.30 0.106 0.130 ØP 3.50 4.00 0.138 0.157 Q 2.54 3.40 0.100 0.134 NOTE: Above package outline conforms to JEDEC TO-220AB Number: DB-220 May 2010, Revision A Page 7 TAK CHEONG ® DISC LA I MER NOTIC E NOTICE The information presented in this document is for reference only. Tak Cheong reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such improper use of sale. This publication supersedes & replaces all information reviously supplied. For additional information, please visit our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance. Number: DB-100 April 14, 2008 / A