SS22 THRU SS210 20V-100V 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS Features For surface mounted application Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: 260oC / 10 seconds at terminals Mechanical Data Case: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band Packaging: 12mm tape per EIA STD RS-481 Weight: 0.093gram 2.0 Ampere Schottky Barrier Rectifiers Absolute Maximum Ratings* Symbol IO TA = 25°C unless otherwise noted Parameter Value Units 2.0 A 50 A 1.3 13 75 W mW/°C °C/W RθJA Average Rectified Current .375 " lead length @ TA = 75°C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient ** Tstg Storage Temperature Range -65 to +150 °C TJ Operating Junction Temperature -65 to +125 °C if(surge) PD *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. **Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics TA = 25°C unless otherwise noted Parameter Peak Repetitive Reverse Voltage Device Units 22 23 24 25 26 28 29 210 20 30 40 50 60 80 90 100 V Maximum RMS Voltage 14 21 28 35 42 56 64 80 V DC Reverse Voltage (Rated VR) 20 30 40 50 60 80 90 100 V Maximum Reverse Current TA = 25°C (Note 1) @ rated VR TA = 100°C Maximum Forward Voltage @ 2.0 A 500 0.4 10 700 850 mA mA mV Note:Pulse Test:Pulse widthÿ300ÿs,Duty:cycleÿ2.0% E-mail: [email protected] 1 of 2 Web Site: www.taychipst.com SS22 THRU SS210 20V-100V 2.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS RATINGSAND CHARACTERISTIC CURVES (SS22 THRU SS210) FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT. (A) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT. (A) 2.0 RESISTIVE OR INDUCTIVE LOAD 1.5 SS25-SS210 SS22-SS24 1.0 0.5 PCB MOUNTED ON 0.2X0.2" (5.0X5.0mm) COPPER PAD AREAS 50 8.3ms Single Half Sine Wave JEDEC Method AT RATED TL 40 30 20 10 0 0 50 60 70 80 90 100 110 120 130 140 150 1 160 10 FIG.4-TYPICALREVERSE CHARACTERISTICS FIG.3- TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT. (mA) INSTANTANEOUS FORWARD CURRENT. (A) 50 O TJ=125 C 10 O TJ=150 C 1 TJ=25 OC PULSE WIDTH=300 S 1% DUTY CYCLE 0.1 SS22-SS24 SS25-SS26 SS29-SS210 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 SS22-SS24 SS25-SS210 O TJ=125 C 10 1 O TJ=75 C 0.1 0.01 O TJ=25 C 0.001 0 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 1.6 FORWARD VOLTAGE. (V) FIG.5-TYPICAL JUNCTION CAPACITANCE 140 FIG.6-TYPICAL CAPACITANCE 400 400 360 NOTE:TYPICAL CAPACITANCE AT 0 V = 320 pF 320 Tj=25 OC f=1.0MHz Vsig=50mVp-p C, CAPACITANCE (pF) JUNCTION CAPACITANCE.(pF) 100 NUMBER OF CYCLES AT 60Hz O LEAD TEMPERATURE. ( C) 100 280 240 200 160 120 80 10 0.1 SS29-SS210 SS22-SS24 SS25-SS26 40 1 0 10 100 REVERSE VOLTAGE. (V) E-mail: [email protected] 0 4 8 12 16 20 24 28 32 36 40 V R , REVERSE VOLTAGE (VOLTS) 2 of 2 Web Site: www.taychipst.com